发明申请
- 专利标题： MOM Capacitors Integrated with Air-Gaps
- 专利标题（中）： MOM电容器与空隙集成
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申请号： US12045547申请日： 2008-03-10
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公开(公告)号： US20090224359A1公开(公告)日： 2009-09-10
- 发明人: Chung-Long Chang , Ming-Shin Yeh , Chia-Yi Chen , David Ding-Chung Lu
- 申请人： Chung-Long Chang , Ming-Shin Yeh , Chia-Yi Chen , David Ding-Chung Lu
- 主分类号： H01L29/92
- IPC分类号： H01L29/92
摘要：
An integrated circuit structure combining air-gaps and metal-oxide-metal (MOM) capacitors is provided. The integrated circuit structure includes a semiconductor substrate; a first metallization layer over the semiconductor substrate; first metal features in the first metallization layer; a second metallization layer over the first metallization layer; second metal features in the second metallization layer, wherein the first and the second metal features are non-capacitor features; a MOM capacitor having an area in at least one of the first and the second metallization layers; and an air-gap in the first metallization layer and between the first metal features.
公开/授权文献
- US08053865B2 MOM capacitors integrated with air-gaps 公开/授权日：2011-11-08