Invention Application
US20090232176A1 Single Mode Vertical Cavity Surface Emitting Laser Using Photonic Crystals With A Central Defect
有权
使用具有中心缺陷的光子晶体的单模垂直腔表面发射激光器
- Patent Title: Single Mode Vertical Cavity Surface Emitting Laser Using Photonic Crystals With A Central Defect
- Patent Title (中): 使用具有中心缺陷的光子晶体的单模垂直腔表面发射激光器
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Application No.: US12423791Application Date: 2009-04-14
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Publication No.: US20090232176A1Publication Date: 2009-09-17
- Inventor: Jan Lipson , Thomas Lenosky , Hongyu Deng
- Applicant: Jan Lipson , Thomas Lenosky , Hongyu Deng
- Main IPC: H01S5/183
- IPC: H01S5/183 ; H01S5/187 ; H01S3/08

Abstract:
Vertical cavity surface emitting lasers are disclosed, one example of which includes a substrate upon which a lower mirror layer is formed. An active region and upper mirror layer are disposed, in that order, on the lower mirror layer. In particular, the upper mirror layer includes a plurality of DBR layers formed on the active region. The upper mirror layer additionally includes a photonic crystal formed on the plurality of DBR layers and having a periodic structure that contributes to the definition of a central defect. As a consequence of this structure, the photonic crystal has a reflectivity that is wavelength dependent, and the central defect enables the VCSEL to propagate a single mode.
Public/Granted literature
- US07668220B2 Single mode vertical cavity surface emitting laser using photonic crystals with a central defect Public/Granted day:2010-02-23
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