发明申请
- 专利标题： Magnetically De-Coupling Magnetic Tunnel Junctions and Bit/Word Lines for Reducing Bit Selection Errors in Spin-Momentum Transfer Switching
- 专利标题（中）： 磁耦合磁隧道结和位/字线，用于减少旋转动力转换切换中的位选择错误
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申请号： US12052326申请日： 2008-03-20
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公开(公告)号： US20090237982A1公开(公告)日： 2009-09-24
- 发明人: Solomon Assefa , Sivananda K. Kanakasabapathy , Janusz Jozef Nowak , Philip L. Trouilloud
- 申请人： Solomon Assefa , Sivananda K. Kanakasabapathy , Janusz Jozef Nowak , Philip L. Trouilloud
- 主分类号： G11C11/16
- IPC分类号： G11C11/16 ; H01L21/4763
摘要：
Techniques for shielding magnetic memory cells from magnetic fields are presented. In accordance with aspects of the invention, a magnetic storage element is formed with at least one conductive segment electrically coupled to the magnetic storage element. At least a portion of the conductive segment is surrounded with a magnetic liner. The magnetic liner is operative to divert at least a portion of a magnetic field created by a current passing through the conductive segment away from the magnetic storage element.
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