公开(公告)号：US07782660B2

公开(公告)日：2010-08-24

申请号：US12052326

申请日：2008-03-20

申请人： Solomon Assefa ,  Sivananda K. Kanakasabapathy ,  Janusz Jozef Nowak ,  Philip L Trouilloud

发明人： Solomon Assefa ,  Sivananda K. Kanakasabapathy ,  Janusz Jozef Nowak ,  Philip L Trouilloud

IPC分类号： G11C11/00

CPC分类号： H01L27/228 ,  G11C11/1659 ,  H01L43/08 ,  H01L2924/0002 ,  H01L2924/00

摘要： Techniques for shielding magnetic memory cells from magnetic fields are presented. In accordance with aspects of the invention, a magnetic storage element is formed with at least one conductive segment electrically coupled to the magnetic storage element. At least a portion of the conductive segment is surrounded with a magnetic liner. The magnetic liner is operative to divert at least a portion of a magnetic field created by a current passing through the conductive segment away from the magnetic storage element.

摘要翻译： 介绍了磁场对磁记忆体进行屏蔽的技术。 根据本发明的方面，磁存储元件形成有至少一个电耦合到磁存储元件的导电段。 导电段的至少一部分被磁性衬垫包围。 磁性衬垫可操作以将由导电段流过的电流产生的磁场的至少一部分转移离开磁存储元件。

公开(公告)号：US07505337B2

公开(公告)日：2009-03-17

申请号：US11330493

申请日：2006-01-12

申请人： Janusz Jozef Nowak ,  Mark Curtis Hayes Lamorey ,  Yu Lu

发明人： Janusz Jozef Nowak ,  Mark Curtis Hayes Lamorey ,  Yu Lu

IPC分类号： G11C29/00

CPC分类号： G11C11/16

摘要： A method for repairing a shorted tunnel device includes the step of applying a stressing signal to the tunnel device. The stressing signal has an amplitude that is greater than an amplitude of a bias signal applied to the device during normal operation. One or more characteristics of the stressing signal are selected so as to substantially optimize a repair of the device. The amplitude and/or the duration of the stressing signal are preferably selected so as to remove a conductive filament shorting the device via a thermal mechanism (e.g., heating).

摘要翻译： 用于修复短路隧道装置的方法包括将应力信号施加到隧道装置的步骤。 应力信号的幅度大于在正常操作期间施加到装置的偏置信号的幅度。 选择应力信号的一个或多个特征，以便基本上优化装置的修复。 优选地选择应力信号的振幅和/或持续时间，以便去除通过热机构（例如，加热）使器件短路的导电丝。

公开(公告)号：US07684150B2

公开(公告)日：2010-03-23

申请号：US10881015

申请日：2004-06-30

申请人： Taras Grigoryevich Pokhil ,  Nurul Amin ,  Steven Paul Bozeman ,  Steven Albert Kalderon ,  Andrzej Adam Stankiewicz ,  Ned Tabat ,  Pu-Ling Lu ,  Johannes Van Ek ,  Janusz Jozef Nowak ,  Patrick Joseph Ryan

发明人： Taras Grigoryevich Pokhil ,  Nurul Amin ,  Steven Paul Bozeman ,  Steven Albert Kalderon ,  Andrzej Adam Stankiewicz ,  Ned Tabat ,  Pu-Ling Lu ,  Johannes Van Ek ,  Janusz Jozef Nowak ,  Patrick Joseph Ryan

IPC分类号： G11B5/127

CPC分类号： G11B5/17 ,  G11B5/1272 ,  G11B5/3116 ,  G11B5/3123 ,  G11B5/3133

摘要： The present invention relates to a head having an air bearing surface for confronting the surface of a storage medium. The head includes a first pole that is spaced apart from a second pole. At least one non-magnetic spacer is positioned between the first pole and the second pole such that the first pole is magnetically decoupled from the second pole. In a further aspect, one or both of the first pole and the second pole can be elliptical in shape.

摘要翻译： 本发明涉及具有用于面对存储介质的表面的空气轴承表面的头部。 头部包括与第二极间隔开的第一极。 至少一个非磁性间隔件位于第一极和第二极之间，使得第一极与第二极磁性地分离。 在另一方面，第一极和第二极中的一个或两个可以是椭圆形的。

公开(公告)号：US20090237982A1

公开(公告)日：2009-09-24

申请号：US12052326

申请日：2008-03-20

申请人： Solomon Assefa ,  Sivananda K. Kanakasabapathy ,  Janusz Jozef Nowak ,  Philip L. Trouilloud

发明人： Solomon Assefa ,  Sivananda K. Kanakasabapathy ,  Janusz Jozef Nowak ,  Philip L. Trouilloud

IPC分类号： G11C11/16 ,  H01L21/4763

CPC分类号： H01L27/228 ,  G11C11/1659 ,  H01L43/08 ,  H01L2924/0002 ,  H01L2924/00

摘要： Techniques for shielding magnetic memory cells from magnetic fields are presented. In accordance with aspects of the invention, a magnetic storage element is formed with at least one conductive segment electrically coupled to the magnetic storage element. At least a portion of the conductive segment is surrounded with a magnetic liner. The magnetic liner is operative to divert at least a portion of a magnetic field created by a current passing through the conductive segment away from the magnetic storage element.

摘要翻译： 介绍了磁场对磁记忆体进行屏蔽的技术。 根据本发明的方面，磁存储元件形成有至少一个电耦合到磁存储元件的导电段。 导电段的至少一部分被磁性衬垫包围。 磁性衬垫可操作以将由导电段流过的电流产生的磁场的至少一部分转移离开磁存储元件。

公开(公告)号：US07352639B2

公开(公告)日：2008-04-01

申请号：US11741030

申请日：2007-04-27

申请人： Mark Curtis Hayes Lamorey ,  Yu Lu ,  Janusz Jozef Nowak

发明人： Mark Curtis Hayes Lamorey ,  Yu Lu ,  Janusz Jozef Nowak

IPC分类号： G11C29/00

CPC分类号： G11C29/50 ,  G11C11/16 ,  G11C29/12005 ,  G11C29/44 ,  G11C29/72 ,  G11C2029/5006

摘要： Apparatus for repairing one or more shorted memory cells in a memory circuit includes control circuitry. The control circuitry is operative in one of at least a first mode and a second mode. In the first mode, the control circuitry is operative to apply a first signal to a selected memory cell in the memory circuit for reading a logic state of the selected memory cell and to determine whether or not the selected memory cell is shorted. In the second mode, the control circuitry is operative to apply a second signal to a selected memory cell which has been determined to be shorted for initiating a repair of the selected memory cell, the second signal being greater in magnitude than the first signal.

摘要翻译： 用于修复存储器电路中的一个或多个短路存储器单元的装置包括控制电路。 控制电路在至少第一模式和第二模式之一中操作。 在第一模式中，控制电路可操作以将第一信号施加到存储器电路中的选定存储单元，以读取所选存储单元的逻辑状态，并确定所选存储单元是否短路。 在第二模式中，控制电路可操作以将第二信号施加到所选择的存储器单元，所选择的存储单元已被确定为短路以用于启动所选存储单元的修复，第二信号的幅度大于第一信号。

公开(公告)号：US07260004B2

公开(公告)日：2007-08-21

申请号：US11330492

申请日：2006-01-12

申请人： Mark Curtis Hayes Lamorey ,  Yu Lu ,  Janusz Jozef Nowak

发明人： Mark Curtis Hayes Lamorey ,  Yu Lu ,  Janusz Jozef Nowak

IPC分类号： G11C29/00

CPC分类号： G11C29/50 ,  G11C11/16 ,  G11C29/12005 ,  G11C29/44 ,  G11C29/72 ,  G11C2029/5006

摘要： Apparatus for repairing one or more shorted memory cells in a memory circuit includes control circuitry. The control circuitry is operative in one of at least a first mode and a second mode. In the first mode, the control circuitry is operative to apply a first signal to a selected memory cell in the memory circuit for reading a logic state of the selected memory cell and to determine whether or not the selected memory cell is shorted. In the second mode, the control circuitry is operative to apply a second signal to a selected memory cell which has been determined to be shorted for initiating a repair of the selected memory cell, the second signal being greater in magnitude than the first signal.

摘要翻译： 用于修复存储器电路中的一个或多个短路存储器单元的装置包括控制电路。 控制电路在至少第一模式和第二模式之一中操作。 在第一模式中，控制电路可操作以将第一信号施加到存储器电路中的选定存储单元，以读取所选存储单元的逻辑状态，并确定所选存储单元是否短路。 在第二模式中，控制电路可操作以将第二信号施加到所选择的存储器单元，所选择的存储单元已被确定为短路以用于启动所选存储单元的修复，第二信号的幅度大于第一信号。

公开(公告)号：US07035062B1

公开(公告)日：2006-04-25

申请号：US10302443

申请日：2002-11-22

申请人： Sining Mao ,  Eric Shane Linville ,  Zheng Gao ,  Brian William Karr ,  Janusz Jozef Nowak ,  Olle Gunnar Heinonen

发明人： Sining Mao ,  Eric Shane Linville ,  Zheng Gao ,  Brian William Karr ,  Janusz Jozef Nowak ,  Olle Gunnar Heinonen

IPC分类号： G11B5/127

CPC分类号： H01F10/3254 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3909 ,  G11B5/3912 ,  G11B5/3932 ,  G11B2005/3996 ,  H01F10/1936 ,  H01F10/3218

摘要： The present invention provides a tunneling magneto-resistive read sensor structure that improves sensitivity and linear density of the sensor structure. The sensor includes first and second electrodes and a stack positioned between the electrodes. The stack includes first and second free layers with magnetization orientations that are biased relative to each other. A tunneling barrier (insulating layer) or non-magnetic metal spacer is positioned between the first and second free layers. A sense current is passed between the first and second free layers of the stack. The amount of current passing through the first and second free layer changes based upon the orientation of the first and second free layers relative to each other.

摘要翻译： 本发明提供一种提高传感器结构的灵敏度和线密度的隧道式磁阻读取传感器结构。 传感器包括第一和第二电极以及位于电极之间的堆叠。 堆叠包括具有相对于彼此偏置的磁化取向的第一和第二自由层。 隧道势垒（绝缘层）或非磁性金属隔离物位于第一和第二自由层之间。 感测电流在堆叠的第一和第二自由层之间通过。 基于第一和第二自由层相对于彼此的取向，通过第一和第二自由层的电流量发生变化。