Invention Application
US20090238972A1 METHODS AND APPARATUS FOR USING REDUCED PURITY SILANE TO DEPOSIT SILICON
审中-公开
使用降低纯度的硅烷沉积硅的方法和装置
- Patent Title: METHODS AND APPARATUS FOR USING REDUCED PURITY SILANE TO DEPOSIT SILICON
- Patent Title (中): 使用降低纯度的硅烷沉积硅的方法和装置
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Application No.: US12410063Application Date: 2009-03-24
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Publication No.: US20090238972A1Publication Date: 2009-09-24
- Inventor: Daniel O. Clark , Mehran Moalem , Robbert M. Vermeulen , Yong Kee Chae , Charles Gay , John M. White , Robert Z. Bachrach , Jay J. Jung
- Applicant: Daniel O. Clark , Mehran Moalem , Robbert M. Vermeulen , Yong Kee Chae , Charles Gay , John M. White , Robert Z. Bachrach , Jay J. Jung
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Main IPC: C23C16/42
- IPC: C23C16/42
Abstract:
In one aspect, a method of forming a silicon layer on a substrate is provided, including the steps providing a substrate; and introducing hydrogen and silane into a chamber containing the substrate such that a layer of silicon is deposited on the substrate; wherein the silane is less than about 99.999% pure. Numerous other aspects are provided.
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