发明申请
- 专利标题： PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
- 专利标题（中）： 等离子体加工设备和等离子体处理方法
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申请号： US12410672申请日： 2009-03-25
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公开(公告)号： US20090242520A1公开(公告)日： 2009-10-01
- 发明人: Yusuke HIRAYAMA
- 申请人： Yusuke HIRAYAMA
- 申请人地址： JP Tokyo
- 专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人： TOKYO ELECTRON LIMITED
- 当前专利权人地址： JP Tokyo
- 优先权： JP2008-080147 20080326
- 主分类号： B23K10/00
- IPC分类号： B23K10/00
摘要：
A plasma processing apparatus includes a local plasma generator, provided to face a mounting table for mounting thereon a substrate to be processed in an airtight processing chamber, for allowing a plasma to locally react on the substrate to be processed; and a moving unit for moving the local plasma generator. The local plasma generator has an offset gas discharge mechanism for discharging an offset gas which offsets reaction of a plasma of a gas discharged from an inside of the local plasma generator.
公开/授权文献
- US08558134B2 Plasma processing apparatus and plasma processing method 公开/授权日：2013-10-15
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