Processing workpieces such as semiconductor wafers or other materials with a laser includes selecting a target to process that corresponds to a target class associated with a predefined temporal pulse profile. The temporal pulse profile includes a first portion that defines a first time duration, and a second portion that defines a second time duration. A method includes generating a laser pulse based on laser system input parameters configured to shape the laser pulse according to the temporal pulse profile, detecting the generated laser pulse, comparing the generated laser pulse to the temporal pulse profile, and adjusting the laser system input parameters based on the comparison.