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    Semiconductor structure processing using multiple laser beam spots spaced on-axis on non-adjacent structures
    2.
    发明授权
    Semiconductor structure processing using multiple laser beam spots spaced on-axis on non-adjacent structures 有权
    使用在非相邻结构上在轴上间隔开的多个激光束点的半导体结构处理

    公开(公告)号：US07935941B2

    公开(公告)日：2011-05-03

    申请号：US11051263

    申请日：2005-02-04

    申请人： Kelly J. Bruland ,  Brian W. Baird ,  Ho Wai Lo ,  Frank G. Evans

    发明人： Kelly J. Bruland ,  Brian W. Baird ,  Ho Wai Lo ,  Frank G. Evans

    IPC分类号： B23K26/08 ,  B23K26/38

    CPC分类号： B23K26/067

    摘要： Methods and systems selectively irradiate structures on or within a semiconductor substrate using a plurality of laser beams. The structures are arranged in a row extending in a generally lengthwise direction. The method generates a first laser beam that propagates along a first laser beam axis that intersects the semiconductor substrate and a second laser beam that propagates along a second laser beam axis that intersects the semiconductor substrate. The method directs the first and second laser beams onto non-adjacent first and second structures in the row. The method moves the first and second laser beam axes relative to the semiconductor substrate along the row substantially in unison in a direction substantially parallel to the lengthwise direction of the row.

    摘要翻译： 方法和系统使用多个激光束选择性地照射半导体衬底上或内部的结构。 这些结构被布置成在大体上沿长度方向延伸的一排。 该方法产生沿着与半导体衬底相交的第一激光束轴传播的第一激光束和沿着与半导体衬底相交的第二激光束轴传播的第二激光束。 该方法将第一和第二激光束引导到行中不相邻的第一和第二结构。 该方法使第一激光束和第二激光束相对于半导体衬底在基本上平行于该行的长度方向的方向上大致一齐地沿着行移动。

    Semiconductor structure processing using multiple laterally spaced laser beam spots with joint velocity profiling
    3.
    发明授权
    Semiconductor structure processing using multiple laterally spaced laser beam spots with joint velocity profiling 有权
    半导体结构处理采用多个横向间隔的激光束点，具有接头速度分布

    公开(公告)号：US07629234B2

    公开(公告)日：2009-12-08

    申请号：US11052014

    申请日：2005-02-04

    申请人： Kelly J. Bruland

    发明人： Kelly J. Bruland

    IPC分类号： H01L21/768

    CPC分类号： H01L23/5258 ,  B23K26/0344 ,  B23K26/0622 ,  B23K26/082 ,  G11C17/14 ,  G11C17/143 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method is used in processing structures on or within a semiconductor substrate using N series of laser pulses to obtain a throughput benefit, wherein N≧2. The structures are arranged in a plurality of substantially parallel rows extending in a generally lengthwise direction. The N series of laser pulses propagate along N respective beam axes until incident upon selected structures in N respective distinct rows. The method determines a joint velocity profile for simultaneously moving in the lengthwise direction the N laser beam axes substantially in unison relative to the semiconductor substrate so as to process structures in the N rows with the respective N series of laser pulses, whereby the joint velocity profile is such that the throughput benefit is achieved while ensuring that the joint velocity profile represents feasible velocities for each of the N series of laser pulses and for each of the respective N rows of structures processed with the N series of laser pulses. A semiconductor substrate is designed to have a structure layout that takes advantage of the N-fold processing parallelism provided by the N laser beams.

    摘要翻译： 使用N系列激光脉冲在半导体衬底上或半导体衬底内的处理结构中使用一种方法来获得生产效益，其中N≥2。 这些结构被布置成沿大致长度方向延伸的多个基本上平行的行。 N系列激光脉冲沿着N个相应的光束轴传播，直到在N个相应的不同行中的选定结构上入射。 该方法确定了相对于半导体衬底基本上一致地使N个激光束轴沿长度方向同时移动的关节速度分布图，以便利用相应的N系列激光脉冲处理N行中的结构，从而将关节速度分布 使得在确保联合速度分布表示对于N系列激光脉冲中的每一个以及用N系列激光脉冲处理的各个N行结构中的每一个的可行速度的同时，实现了吞吐量益处。 半导体衬底被设计成具有利用由N个激光束提供的N倍处理平行度的优点的结构布局。

    Methods and systems for positioning a laser beam spot relative to a semiconductor integrated circuit using a processing target as an alignment target
    4.
    发明授权
    Methods and systems for positioning a laser beam spot relative to a semiconductor integrated circuit using a processing target as an alignment target 有权
    用于使用处理对象作为对准目标相对于半导体集成电路定位激光束点的方法和系统

    公开(公告)号：US07315038B2

    公开(公告)日：2008-01-01

    申请号：US11213329

    申请日：2005-08-26

    申请人： Kelly J. Bruland

    发明人： Kelly J. Bruland

    IPC分类号： G01N21/00 ,  B23K26/00

    CPC分类号： B23K26/04 ,  B23K26/042 ,  B23K26/043 ,  H01L21/76894 ,  H01L23/5258 ,  H01L23/544 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method and system position a laser beam spot relative to a semiconductor substrate having structures on or within the semiconductor substrate to be selectively processed by delivering a processing laser beam to a processing laser beam spot. The method generates a metrology laser beam and propagates the metrology laser beam along a propagation path to a metrology laser beam spot on or near a structure to be selectively processed. The method detects a reflection of the metrology laser beam from the structure, thereby generating a reflection signal, and determining, based on the reflection signal, a position of the metrology laser beam spot relative to the structure.

    摘要翻译： 一种方法和系统将激光束点相对于在半导体衬底上或半导体衬底内具有结构的半导体衬底定位，以通过将处理激光束传送到处理激光束点来选择性地处理。 该方法产生计量激光束，并将测量激光束沿着传播路径传播到要选择性处理的结构上或附近的计量激光束点。 该方法检测来自结构的计量激光束的反射，从而产生反射信号，并且基于反射信号确定计量激光束点相对于该结构的位置。

    Methods and systems for positioning a laser beam spot relative to a semiconductor integrated circuit using a processing target as a metrology target
    5.
    发明授权
    Methods and systems for positioning a laser beam spot relative to a semiconductor integrated circuit using a processing target as a metrology target 有权
    用于使用处理目标作为度量目标相对于半导体集成电路定位激光束点的方法和系统

    公开(公告)号：US07297972B2

    公开(公告)日：2007-11-20

    申请号：US11365468

    申请日：2006-02-28

    申请人： Kelly J. Bruland

    发明人： Kelly J. Bruland

    IPC分类号： G01N21/00 ,  B23K26/00

    CPC分类号： B23K26/04 ,  H01L23/5258 ,  H01L23/544 ,  H01L2223/5442 ,  H01L2223/54453 ,  H01L2223/5446 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Various methods and systems measure, determine, or align a position of a laser beam spot relative to a semiconductor substrate having structures on or within the semiconductor substrate to be selectively processed by delivering a processing laser beam to a processing laser beam spot. A metrology laser beam spot is directed to one or more of those structures to be selectively processed (e.g., laser-severable conductive links), and reflections of the metrology laser beam off of those structures to be selectively processed are detected to perform the measurement, determination, or alignment. The processing laser beam can then be accurately directed onto those structures to process them on a selective basis. The various methods and systems thus utilize those structures themselves—rather than relying exclusively on dedicated alignment markers—to perform the measurement, determination, or alignment.

    摘要翻译： 各种方法和系统相对于具有在半导体衬底上或半导体衬底内的结构的半导体衬底来测量，确定或对准激光束点的位置，以通过将处理激光束传送到处理激光束点来进行选择性处理。 测量激光束点被引导到要选择性处理的那些结构中的一个或多个（例如，激光可分割的导电连接），并且检测出被选择性处理的那些结构的计量激光束的反射以执行测量， 确定或对齐。 然后可以将处理激光束精确地引导到这些结构上，以在选择的基础上处理它们。 因此，各种方法和系统利用这些结构本身，而不是仅依靠专用对准标记来执行测量，确定或对准。

    Semiconductor structure processing using multiple laterally spaced laser beam spots delivering multiple blows
    6.
    发明授权
    Semiconductor structure processing using multiple laterally spaced laser beam spots delivering multiple blows 有权
    使用多个横向间隔开的激光束点进行多次打击的半导体结构处理

    公开(公告)号：US07687740B2

    公开(公告)日：2010-03-30

    申请号：US11051262

    申请日：2005-02-04

    申请人： Kelly J. Bruland ,  Brian W. Baird ,  Ho Wai Lo

    发明人： Kelly J. Bruland ,  Brian W. Baird ,  Ho Wai Lo

    IPC分类号： B23K26/00

    CPC分类号： B23K26/067 ,  B23K26/0613 ,  H01L21/76894

    摘要： Methods and systems process a semiconductor substrate having a plurality of structures to be selectively irradiated with multiple laser beams. The structures are arranged in a plurality of substantially parallel rows extending in a generally lengthwise direction. The method generates a first laser beam that propagates along a first laser beam axis that intersects a first target location on or within the semiconductor substrate. The method also generates a second laser beam that propagates along a second laser beam axis that intersects a second target location on or within the semiconductor substrate. The second target location is offset from the first target location in a direction perpendicular to the lengthwise direction of the rows by some amount such that, when the first target location is a structure on a first row of structures, the second target location is a structure or between two adjacent structures on a second row distinct from the first row. The method moves the semiconductor substrate relative to the first and second laser axes in a direction approximately parallel to the rows of structures, so as to pass the first target location along the first row to irradiate for a first time selected structures in the first row, and so as to simultaneously pass the second target location along the second row to irradiate for a second time structures previously irradiated by the first laser beam during a previous pass of the first target location along the second row.

    摘要翻译： 方法和系统处理具有多个结构的半导体衬底以选择性地照射多个激光束。 这些结构被布置成沿大致长度方向延伸的多个基本上平行的行。 该方法产生沿着与半导体衬底上或半导体衬底内的第一目标位置相交的第一激光束轴传播的第一激光束。 该方法还产生沿着与半导体衬底上或第二靶标位置相交的第二激光束轴传播的第二激光束。 第二目标位置在垂直于行长度方向的方向上偏离第一目标位置一定量，使得当第一目标位置是第一行结构上的结构时，第二目标位置是结构 或在与第一行不同的第二行上的两个相邻结构之间。 所述方法使所述半导体衬底相对于所述第一和第二激光轴在大致平行于所述结构行的方向上移动，以使所述第一目标位置沿着所述第一行通过，以在所述第一行中首次照射所选择的结构， 并且沿着第二行同时通过第二目标位置以照射先前在第一目标位置沿着第二行的先前通过期间由第一激光束照射的第二时间结构。

    SYSTEMS AND METHODS FOR PROCESSING SEMICONDUCTOR STRUCTURES USING LASER PULSES LATERALLY DISTRIBUTED IN A SCANNING WINDOW
    7.
    发明申请
    SYSTEMS AND METHODS FOR PROCESSING SEMICONDUCTOR STRUCTURES USING LASER PULSES LATERALLY DISTRIBUTED IN A SCANNING WINDOW 有权
    使用在扫描窗口中分布的激光脉冲处理半导体结构的系统和方法

    公开(公告)号：US20080299783A1

    公开(公告)日：2008-12-04

    申请号：US11757232

    申请日：2007-06-01

    申请人： Kelly J. Bruland ,  Mark A. Unrath ,  Douglas E. Holmgren

    发明人： Kelly J. Bruland ,  Mark A. Unrath ,  Douglas E. Holmgren

    IPC分类号： H01L21/26 ,  G11B11/00

    CPC分类号： B23K26/0622 ,  B23K26/082 ,  B23K2101/40

    摘要： Systems and methods process structures on or within a semiconductor substrate using a series of laser pulses. In one embodiment, a deflector is configured to selectively deflect the laser pulses within a processing window. The processing window is scanned over the semiconductor substrate such that a plurality of laterally spaced rows of structures simultaneously pass through the processing window. As the processing window is scanned, the deflector selectively deflects the series of laser pulses among the laterally spaced rows within the processing window. Thus, multiple rows of structures may be processed in a single scan.

    摘要翻译： 系统和方法使用一系列激光脉冲在半导体衬底上或内部处理结构。 在一个实施例中，偏转器被配置为在处理窗口内选择性地偏转激光脉冲。 在半导体衬底上扫描处理窗口，使得多个横向间隔开的行结构同时通过处理窗口。 当扫描处理窗口时，偏转器选择性地偏转处理窗口内的横向间隔的行中的一系列激光脉冲。 因此，可以在单次扫描中处理多行结构。

    Photonic clock stabilized laser comb processing
    10.
    发明授权
    Photonic clock stabilized laser comb processing 失效
    光子时钟稳定激光梳状加工

    公开(公告)号：US08358671B2

    公开(公告)日：2013-01-22

    申请号：US13186323

    申请日：2011-07-19

    申请人： Brian W. Baird ,  Kelly J. Bruland ,  Clint R. Vandergiessen ,  Mark A. Unrath ,  Brady Nilsen ,  Steve Swaringen

    发明人： Brian W. Baird ,  Kelly J. Bruland ,  Clint R. Vandergiessen ,  Mark A. Unrath ,  Brady Nilsen ,  Steve Swaringen

    IPC分类号： H01S3/10 ,  B23K26/00

    CPC分类号： H01S3/0007 ,  B23K26/042 ,  B23K26/0622 ,  B23K26/0853

    摘要： Processing a workpiece with a laser includes generating laser pulses at a first pulse repetition frequency. The first pulse repetition frequency provides reference timing for coordination of a beam positioning system and one or more cooperating beam position compensation elements to align beam delivery coordinates relative to the workpiece. The method also includes, at a second pulse repetition frequency that is lower than the first pulse repetition frequency, selectively amplifying a subset of the laser pulses. The selection of the laser pulses included in the subset is based on the first pulse repetition frequency and position data received from the beam positioning system. The method further includes adjusting the beam delivery coordinates using the one or more cooperating beam position compensation elements so as to direct the amplified laser pulses to selected targets on the workpiece.

    摘要翻译： 用激光加工工件包括以第一脉冲重复频率产生激光脉冲。 第一脉冲重复频率提供用于协调光束定位系统和一个或多个配合光束位置补偿元件的参考定时，以相对于工件对准光束传送坐标。 该方法还包括在低于第一脉冲重复频率的第二脉冲重复频率下，选择性地放大激光脉冲的子集。 包括在子集中的激光脉冲的选择基于从波束定位系统接收的第一脉冲重复频率和位置数据。 该方法还包括使用一个或多个配合光束位置补偿元件来调整光束传送坐标，以便将放大的激光脉冲引导到工件上的选定目标。