发明申请
- 专利标题: Process gas introducing mechanism and plasma processing device
- 专利标题(中): 工艺气体引入机构和等离子体处理装置
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申请号: US12457834申请日: 2009-06-23
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公开(公告)号: US20090260762A1公开(公告)日: 2009-10-22
- 发明人: Takayuki Kamaishi , Akinori Shimamura , Masato Morishima
- 申请人: Takayuki Kamaishi , Akinori Shimamura , Masato Morishima
- 申请人地址: JP Minato-ku
- 专利权人: TOKYO ELECTRON LIMITED
- 当前专利权人: TOKYO ELECTRON LIMITED
- 当前专利权人地址: JP Minato-ku
- 优先权: JP2003-127201 20030502; JP2003-180865 20030625
- 主分类号: C23F1/08
- IPC分类号: C23F1/08 ; C23C16/505
摘要:
A processing gas introducing mechanism for introducing a processing gas into a processing space is provided between a plasma generation unit and a chamber of a plasma processing apparatus. The processing gas introducing mechanism includes a gas introducing base having therein a gas introducing path for introducing the processing gas into the processing space, and a near ring-shaped gas introducing plate equipped in the hole part of the gas introducing base such that it can be detached therefrom. Herein, the gas introducing base has a hole part forming one portion of the processing space in a central portion thereof, and the gas introducing plate has plural gas discharge holes communicating with the processing space to discharge thereinto the processing gas from the gas introducing path.
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