Invention Application
US20090261438A1 VISIBLE-RANGE SEMICONDUCTOR NANOWIRE-BASED PHOTOSENSOR AND METHOD FOR MANUFACTURING THE SAME
审中-公开
可见范围半导体基于纳米级的光电传感器及其制造方法
- Patent Title: VISIBLE-RANGE SEMICONDUCTOR NANOWIRE-BASED PHOTOSENSOR AND METHOD FOR MANUFACTURING THE SAME
- Patent Title (中): 可见范围半导体基于纳米级的光电传感器及其制造方法
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Application No.: US12416562Application Date: 2009-04-01
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Publication No.: US20090261438A1Publication Date: 2009-10-22
- Inventor: Kyoung Jin CHOI , Jae Gwan PARK , Dong Wan KIM , Young Jin CHOI , Kyung Soo PARK , Jae Hwan PARK , Jae Chul PYUN
- Applicant: Kyoung Jin CHOI , Jae Gwan PARK , Dong Wan KIM , Young Jin CHOI , Kyung Soo PARK , Jae Hwan PARK , Jae Chul PYUN
- Priority: KR10-2008-0035505 20080417
- Main IPC: H01L31/0272
- IPC: H01L31/0272

Abstract:
A semiconductor nanowire-based photosensor includes a substrate, at least a top surface of the substrate being formed of an insulator, two electrodes spaced at a predetermined interval apart from each other on the substrate, metal catalyst layers disposed respectively on the two electrodes, and visible-range semiconductor nanowires grown from the metal catalyst layers on the two electrodes. The semiconductor nanowires grown from one of the metal catalyst layers are in contact with the semiconductor nanowires grown from the other metal catalyst layer, while the semiconductor nanowires grown respectively from the metal catalyst layers on the two electrodes are floated between the two electrodes over the substrate.
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