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    VISIBLE-RANGE SEMICONDUCTOR NANOWIRE-BASED PHOTOSENSOR AND METHOD FOR MANUFACTURING THE SAME
    1.
    发明申请
    VISIBLE-RANGE SEMICONDUCTOR NANOWIRE-BASED PHOTOSENSOR AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    可见范围半导体基于纳米级的光电传感器及其制造方法

    公开(公告)号：US20090261438A1

    公开(公告)日：2009-10-22

    申请号：US12416562

    申请日：2009-04-01

    申请人： Kyoung Jin CHOI ,  Jae Gwan PARK ,  Dong Wan KIM ,  Young Jin CHOI ,  Kyung Soo PARK ,  Jae Hwan PARK ,  Jae Chul PYUN

    发明人： Kyoung Jin CHOI ,  Jae Gwan PARK ,  Dong Wan KIM ,  Young Jin CHOI ,  Kyung Soo PARK ,  Jae Hwan PARK ,  Jae Chul PYUN

    IPC分类号： H01L31/0272

    CPC分类号： H01L31/03529 ,  B82Y20/00 ,  H01L31/022408 ,  H01L31/0296 ,  Y02E10/50

    摘要： A semiconductor nanowire-based photosensor includes a substrate, at least a top surface of the substrate being formed of an insulator, two electrodes spaced at a predetermined interval apart from each other on the substrate, metal catalyst layers disposed respectively on the two electrodes, and visible-range semiconductor nanowires grown from the metal catalyst layers on the two electrodes. The semiconductor nanowires grown from one of the metal catalyst layers are in contact with the semiconductor nanowires grown from the other metal catalyst layer, while the semiconductor nanowires grown respectively from the metal catalyst layers on the two electrodes are floated between the two electrodes over the substrate.

    摘要翻译： 基于半导体纳米线的光电传感器包括基板，所述基板的至少顶表面由绝缘体形成，在所述基板上以预定间隔彼此隔开的两个电极，分别设置在所述两个电极上的金属催化剂层，以及 从两个电极上的金属催化剂层生长的可见范围半导体纳米线。 从金属催化剂层之一生长的半导体纳米线与从另一个金属催化剂层生长的半导体纳米线接触，而分别从两个电极上的金属催化剂层生长的半导体纳米线浮在基板上的两个电极之间 。

    ELECTRODE INCLUDING NANOCOMPOSITE ACTIVE MATERIAL, METHOD OF PREPARING THE SAME, AND ELECTROCHEMICAL DEVICE INCLUDING THE SAME
    2.
    发明申请
    ELECTRODE INCLUDING NANOCOMPOSITE ACTIVE MATERIAL, METHOD OF PREPARING THE SAME, AND ELECTROCHEMICAL DEVICE INCLUDING THE SAME 审中-公开
    包括纳米复合材料活性材料的电极，其制备方法和包括其的电化学装置

    公开(公告)号：US20110165461A1

    公开(公告)日：2011-07-07

    申请号：US12976812

    申请日：2010-12-22

    申请人： Kyung Soo PARK ,  Young Jin CHOI ,  Jin Gu KANG ,  Dae Hyun KIM ,  Dong Wan KIM ,  Jae Gwan PARK

    发明人： Kyung Soo PARK ,  Young Jin CHOI ,  Jin Gu KANG ,  Dae Hyun KIM ,  Dong Wan KIM ,  Jae Gwan PARK

    IPC分类号： H01M4/48 ,  H01M4/52 ,  H01M4/54 ,  H01M4/50 ,  B05D5/12 ,  C23C14/34 ,  H01G9/155 ,  B82Y30/00

    CPC分类号： H01M10/0525 ,  B82Y30/00 ,  H01G11/26 ,  H01G11/42 ,  H01G11/46 ,  H01G11/50 ,  H01G11/86 ,  H01M4/131 ,  H01M4/485 ,  H01M4/661 ,  H01M4/664 ,  H01M4/667 ,  H01M4/75 ,  Y02E60/13 ,  Y02T10/7011 ,  Y02T10/7022

    摘要： The present invention provides an electrode and a method of preparing the same. The electrode of the present invention is prepared by forming a nanostructured conductor comprising a metal or metal oxide on a substrate and forming an active material comprising metal oxide nanoparticles on the surface of the nanostructured conductor. The electrode of the present invention can be used in various electrochemical devices such as energy storage devices including secondary batteries, supercapacitors, etc., photocatalyst elements, thermoelectric elements, or composite elements thereof. Moreover, the electrode of the present invention can be applied to a lithium secondary battery, in which intercalation/deintercalation of lithium ions is performed, and especially applied to a negative electrode of the lithium secondary battery.The electrode of the present invention includes a substrate and an active material layer formed on the substrate, the active material layer including a nanostructured conductor formed on the substrate and comprising a metal or metal oxide and an active material formed on the surface of the nanostructured conductor and comprising metal oxide nanoparticles.

    摘要翻译： 本发明提供一种电极及其制备方法。 本发明的电极通过在衬底上形成包含金属或金属氧化物的纳米结构导体并在纳米结构导体的表面上形成包含金属氧化物纳米颗粒的活性材料来制备。 本发明的电极可以用于各种电化学装置，例如包括二次电池，超级电容器等的光存储装置，光催化剂元件，热电元件或其复合元件。 此外，本发明的电极可以应用于其中进行锂离子的插入/脱嵌，特别是应用于锂二次电池的负极的锂二次电池。 本发明的电极包括在基板上形成的基板和活性物质层，所述活性物质层包含在所述基板上形成的纳米结构导体，所述纳米结构导体由金属或金属氧化物构成，所述活性物质形成在所述纳米结构导体的表面上 并且包含金属氧化物纳米颗粒。

    LOW TEMPERATURE CO-FIRED CERAMICS WITH LOW DIELECTRIC LOSS FOR MILLIMETER-WAVE APPLICATION
    3.
    发明申请
    LOW TEMPERATURE CO-FIRED CERAMICS WITH LOW DIELECTRIC LOSS FOR MILLIMETER-WAVE APPLICATION 有权
    用于微波辐射应用的低介电损耗的低温合成陶瓷

    公开(公告)号：US20120202675A1

    公开(公告)日：2012-08-09

    申请号：US13098937

    申请日：2011-05-02

    申请人： Jeong Hyun PARK ,  Jin Gu KANG ,  Young Jin CHOI ,  Jae Gwan PARK

    发明人： Jeong Hyun PARK ,  Jin Gu KANG ,  Young Jin CHOI ,  Jae Gwan PARK

    IPC分类号： C03C14/00

    CPC分类号： H01B3/12 ,  C03C8/02 ,  C03C14/004 ,  C03C2214/20 ,  C04B35/16 ,  C04B35/20 ,  C04B2235/3217 ,  C04B2235/3284 ,  C04B2235/3427 ,  C04B2235/3445 ,  C04B2235/365 ,  C04B2235/77 ,  C04B2235/96

    摘要： Provided is a dielectric ceramic composition comprising: 40-70 wt % of a borosilicate-based glass frit comprising 50-80 mol % of SiO2, 15-20 mol % of B2O3, 0.1-5 mol % of one or more alkali metal oxide selected from Li2O and Na2O, and 0.1-30 mol % of one or more alkaline earth metal oxide selected from MgO, CaO, SrO and ZnO; and 30-60 wt % of a ceramic filler represented by Chemical Formula 1: (Zn1-xMgx)2SiO4  (1) wherein 0≦x≦1. The disclosed low temperature co-fired ceramic (LTCC) composition is sinterable at low temperature, with a relative density of at least 95% in the temperature range of 800-900° C., is capable of minimizing electric loss, with a dielectric constant of 4-7 and a very low dielectric loss, and is applicable from the low-frequency band to the millimeter-wave band of 60 GHz or more.

    摘要翻译： 提供一种电介质陶瓷组合物，其包含：40-70重量％的硼硅酸盐基玻璃料，其包含50-80摩尔％的SiO 2，15-20摩尔％的B 2 O 3，0.1-5摩尔％的一种或多种碱金属氧化物 从Li 2 O和Na 2 O，以及0.1-30mol％的一种或多种选自MgO，CaO，SrO和ZnO的碱土金属氧化物; 和30-60重量％的由化学式1表示的陶瓷填料：（Zn1-xMgx）2SiO4（1）其中0＆nlE; x＆nlE; 1。 所公开的低温共烧陶瓷（LTCC）组合物在低温下是可烧结的，在800-900℃的温度范围内相对密度至少为95％，能够最小化电损耗，介电常数 并且具有非常低的介电损耗，并且适用于60GHz以上的低频带至毫米波段。

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF
    8.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF 有权
    半导体发光器件及其制造方法

    公开(公告)号：US20160013365A1

    公开(公告)日：2016-01-14

    申请号：US14627721

    申请日：2015-02-20

    申请人： Dae Myung CHUN ,  Ji Hye YEON ,  Jae Hyeok HEO ,  Hyun Seong KUM ,  Han Kyu SEONG ,  Young Jin CHOI

    发明人： Dae Myung CHUN ,  Ji Hye YEON ,  Jae Hyeok HEO ,  Hyun Seong KUM ,  Han Kyu SEONG ,  Young Jin CHOI

    IPC分类号： H01L33/24 ,  H01L33/00 ,  H01L33/32 ,  H01L33/54 ,  H01L33/06 ,  H01L33/08

    CPC分类号： H01L33/24 ,  H01L33/007 ,  H01L33/08 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

    摘要： A method for manufacturing a semiconductor light emitting device may include steps of forming a mask layer and a mold layer having a plurality of openings exposing portions of a base layer, forming a plurality of first conductivity-type semiconductor cores each including a body portion extending through each of the openings from the base layer and a tip portion disposed on the body portion and having a conical shape, and forming an active layer and a second conductivity-type semiconductor layer on each of the plurality of first conductivity-type semiconductor cores. The step of forming the plurality of first conductivity-type semiconductor cores may include forming a first region such that a vertex of the tip portion is positioned on a central vertical axis of the body portion, removing the mold layer, and forming an additional growth region on the first region such that the body portion has a hexagonal prism shape.

    摘要翻译： 半导体发光器件的制造方法可以包括以下步骤：形成掩模层和模具层，所述模具层具有暴露基底层的部分的多个开口，形成多个第一导电型半导体芯，每个第一导电型半导体芯包括延伸穿过的主体部分 从底层开口的每个开口和设置在主体部分上的具有圆锥形状的尖端部分，并且在多个第一导电型半导体芯中的每一个上形成有源层和第二导电类型半导体层。 形成多个第一导电型半导体芯的步骤可以包括形成第一区域，使得尖端部分的顶点位于主体部分的中心垂直轴线上，去除模具层，并形成附加生长区域 在第一区域上使得主体部分具有六棱柱形状。

    INTERFACE ADHESION IMPROVEMENT METHOD
    9.
    发明申请
    INTERFACE ADHESION IMPROVEMENT METHOD 有权
    界面粘合改进方法

    公开(公告)号：US20140024180A1

    公开(公告)日：2014-01-23

    申请号：US13947032

    申请日：2013-07-20

    申请人： Young Jin CHOI ,  Jrjyan Jerry CHEN ,  Beom Soo PARK ,  Soo Young CHOI

    发明人： Young Jin CHOI ,  Jrjyan Jerry CHEN ,  Beom Soo PARK ,  Soo Young CHOI

    IPC分类号： H01L21/02

    CPC分类号： H01L21/02107 ,  C23C16/308 ,  H01L51/0096 ,  H01L51/5253 ,  Y02E10/549

    摘要： Embodiments of the invention provide methods of an interface adhesion improvement methods used on a transparent substrate for OLED or thin film transistor applications. In one embodiment, a method of forming a buffer layer on a surface of a substrate includes providing a substrate having an planarization material disposed thereon in a processing chamber, supplying a buffer layer gas mixture including a silicon containing gas into the processing chamber, controlling a substrate temperature less than about 100 degrees Celsius, forming a buffer layer on the planarization material, supplying an encapsulating barrier layer deposition gas mixture including a silicon containing gas and a nitrogen containing gas into the processing chamber, and forming an encapsulating barrier layer on the buffer layer.

    摘要翻译： 本发明的实施例提供了在用于OLED或薄膜晶体管应用的透明基板上使用的界面附着改进方法的方法。 在一个实施例中，在衬底的表面上形成缓冲层的方法包括在处理室中提供其上设置有平坦化材料的衬底，将包含含硅气体的缓冲层气体混合物供应到处理室中， 衬底温度低于约100摄氏度，在平坦化材料上形成缓冲层，向处理室中提供包含含硅气体和含氮气体的封装阻挡层沉积气体混合物，并在缓冲层上形成封装阻挡层 层。

    METHOD FOR DEPOSITING AN ENCAPSULATING FILM
    10.
    发明申请
    METHOD FOR DEPOSITING AN ENCAPSULATING FILM 有权
    沉积膜的方法

    公开(公告)号：US20130210199A1

    公开(公告)日：2013-08-15

    申请号：US13768921

    申请日：2013-02-15

    申请人： Jrjyan Jerry CHEN ,  Tae K. WON ,  Beom Soo PARK ,  Young Jin CHOI ,  Soo Young CHOI

    发明人： Jrjyan Jerry CHEN ,  Tae K. WON ,  Beom Soo PARK ,  Young Jin CHOI ,  Soo Young CHOI

    IPC分类号： H01L51/52

    CPC分类号： H01L51/5256 ,  C23C16/26 ,  C23C16/345

    摘要： A method and apparatus for depositing a material layer, such as encapsulating film, onto a substrate is described. In one embodiment, an encapsulating film formation method includes delivering a gas mixture into a processing chamber, the gas mixture comprising a silicone-containing gas, a first nitrogen-containing gas, a second nitrogen-containing gas and hydrogen gas; energizing the gas mixture within the processing chamber by applying between about 0.350 watts/cm2 to about 0.903 watts/cm2 to a gas distribution plate assembly spaced about 800 mils to about 1800 mils above a substrate positioned within the processing chamber; maintaining the energized gas mixture within the processing chamber at a pressure of between about 0.5 Torr to about 3.0 Torr; and depositing an inorganic encapsulating film on the substrate in the presence of the energized gas mixture. In other embodiments, an organic dielectric layer is sandwiched between inorganic encapsulating layers.

    摘要翻译： 描述了用于将材料层（例如封装膜）沉积到基底上的方法和装置。 在一个实施方案中，封装膜形成方法包括将气体混合物输送到处理室中，所述气体混合物包含含硅氧烷气体，第一含氮气体，第二含氮气体和氢气; 通过向位于处理室内的基板上方间隔约800密耳至约1800密耳的气体分配板组件施加约0.350瓦特/平方厘米至约0.903瓦特/平方厘米，对处理室内的气体混合物通电; 将加压气体混合物在处理室内保持在约0.5托至约3.0托之间的压力; 以及在通电的气体混合物的存在下在基底上沉积无机封装膜。 在其他实施例中，有机介电层夹在无机封装层之间。