发明申请
- 专利标题: SEMICONDUCTOR DEVICE
- 专利标题(中): 半导体器件
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申请号: US12423536申请日: 2009-04-14
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公开(公告)号: US20090261444A1公开(公告)日: 2009-10-22
- 发明人: Shunpei Yamazaki , Jun Koyama , Hideaki Shishido
- 申请人: Shunpei Yamazaki , Jun Koyama , Hideaki Shishido
- 申请人地址: JP Atsugi-shi
- 专利权人: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人地址: JP Atsugi-shi
- 优先权: JP2008-108896 20080418
- 主分类号: H01L31/02
- IPC分类号: H01L31/02
摘要:
A wiring electrically connected to a terminal to which a high power supply potential is applied and a wiring electrically connected to a terminal to which a low power supply potential is applied are formed adjacent to each other and are formed so as to surround the integrated circuit. Thus, wiring resistance can be added between the terminals and the integrated circuit and capacitance can be added between the two wirings. Even if overvoltage is applied to the terminals due to ESD or the like, the energy of the overvoltage is consumed by the wiring resistance and the added capacitor, so that damage of the integrated circuit can be suppressed.
公开/授权文献
- US08106474B2 Semiconductor device 公开/授权日:2012-01-31
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