A method of fabricating a memory cell including forming nanodots over a first dielectric layer and forming a second dielectric layer over the nanodots, where the second dielectric layer encases the nanodots. In addition, an intergate dielectric layer is formed over the second dielectric layer. To form sidewalls of the memory cell, a portion of the intergate dielectric layer and a portion of the second dielectric layer are removed with a dry etch, where the sidewalls include a location where a nanodot has been deposited. A spacing layer is formed over the sidewalls to cover the location where a nanodot has been deposited and the remaining portion of the second dielectric layer and the nanodots can be removed with an isotropic etch selective to the second dielectric layer.