发明申请
- 专利标题: MEMORY CELL
- 专利标题(中): 记忆体
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申请号: US12126046申请日: 2008-05-23
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公开(公告)号: US20090267056A1公开(公告)日: 2009-10-29
- 发明人: CHIA-CHIEH CHANG
- 申请人: CHIA-CHIEH CHANG
- 申请人地址: TW Hsin-Chu
- 专利权人: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- 当前专利权人: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
- 当前专利权人地址: TW Hsin-Chu
- 优先权: TW097115514 20080428
- 主分类号: H01L51/05
- IPC分类号: H01L51/05 ; H01L29/792
摘要:
A memory cell comprising a metal-insulator-semiconductor (MIS) structure is disclosed using a homogeneous carrier trapping layer interposed between a semiconductor layer and the gate electrode of a transistor structure so that the operation voltage is reduced and the manufacturing is simplified with lowered cost. The MIS structure comprises: a gate electrode; a semiconductor layer; and a homogeneous carrier trapping layer interposed between the gate electrode and the semiconductor layer; wherein the homogeneous carrier trapping layer comprises novolac.