发明申请
US20090267070A1 Multilayer image sensor structure for reducing crosstalk 有权
用于减少串扰的多层图像传感器结构

Multilayer image sensor structure for reducing crosstalk
摘要:
An image sensor pixel includes a substrate, an epitaxial layer, and a light collection region. The substrate is doped to have a first conductivity type. The epitaxial layer is disposed over the substrate and doped to have a second conductivity type opposite of the first conductivity type. The light collection region is disposed within the epitaxial layer for collecting photo-generated charge carriers. The light collection region is doped to have the first conductivity type as well.
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