发明申请
US20090272321A1 MANUFACTURING APPARATUS OF SEMICONDUCTOR DEVICE AND PATTERN-FORMING METHOD
审中-公开
半导体器件的制造方法和图案形成方法
- 专利标题: MANUFACTURING APPARATUS OF SEMICONDUCTOR DEVICE AND PATTERN-FORMING METHOD
- 专利标题(中): 半导体器件的制造方法和图案形成方法
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申请号: US12502331申请日: 2009-07-14
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公开(公告)号: US20090272321A1公开(公告)日: 2009-11-05
- 发明人: Fuminori TATEISHI , Hideaki KUWABARA
- 申请人: Fuminori TATEISHI , Hideaki KUWABARA
- 申请人地址: JP Atsugi-shi
- 专利权人: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人地址: JP Atsugi-shi
- 优先权: JP2004-151859 20040521
- 主分类号: B05C11/00
- IPC分类号: B05C11/00 ; B05B7/00
摘要:
The present invention provides a manufacturing apparatus of a semiconductor device, having a pattern-forming apparatus using a droplet-discharging method that is suitable for a large substrate in mass production. A plurality of pattern-forming apparatuses using a droplet-discharging method and a plurality of heat-treatment chambers are provided, and each of which is connected to one transfer chamber, which is a multi-chamber system. Discharging and baking are conducted efficiently to improve productivity. A gas is blown in the same direction as the scanning direction (or a scanning direction of a discharging head) on a substrate just after a droplet is landed, by providing a blowing means in the pattern-forming apparatus, and a heater is provided in a gas-flow path for local baking.
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