发明申请
US20090280431A1 MATERIAL FOR PROTECTIVE FILM FORMATION, AND METHOD FOR PHOTORESIST PATTERN FORMATION USING THE SAME
审中-公开
用于保护膜形成的材料,以及使用其形成光电子图案的方法
- 专利标题: MATERIAL FOR PROTECTIVE FILM FORMATION, AND METHOD FOR PHOTORESIST PATTERN FORMATION USING THE SAME
- 专利标题(中): 用于保护膜形成的材料,以及使用其形成光电子图案的方法
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申请号: US12066127申请日: 2006-09-08
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公开(公告)号: US20090280431A1公开(公告)日: 2009-11-12
- 发明人: Tomoyuki Hirano , Kotaro Endo , Keita Ishiduka
- 申请人: Tomoyuki Hirano , Kotaro Endo , Keita Ishiduka
- 申请人地址: JP Kawasaki-shi, Kanagawa
- 专利权人: TOKYO OHKA KOGYO CO., LTD.
- 当前专利权人: TOKYO OHKA KOGYO CO., LTD.
- 当前专利权人地址: JP Kawasaki-shi, Kanagawa
- 优先权: JP2005-263065 20050909; JPPCT/JP2006/317879 20060908
- 国际申请: PCT/JP2006/317879 WO 20060908
- 主分类号: G03F7/20
- IPC分类号: G03F7/20 ; G03F7/004
摘要:
To provide a material for protective film formation that can simultaneously prevent a change in quality of a resist film during liquid immersion exposure and a change in quality of a liquid for liquid immersion exposure used, and, at the same time, can form a resist pattern having a good shape without increasing the number of treatment steps. A material for protective film formation, comprising at least an alkali-soluble polymer comprising constitutional units represented by general formula (1): wherein R1 represents a hydrogen atom or a methyl group; R2 represents an alkylene chain having 1 to 5 carbon atoms; R3 represents a fluorinated alkylene chain having 1 to 10 carbon atoms in which a part or all of hydrogen atoms have been substituted by a fluorine atom; and m is a repeating unit.
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