Solid-state imaging device having a vertical transistor with a dual polysilicon gate
    1.
    发明授权
    Solid-state imaging device having a vertical transistor with a dual polysilicon gate 有权
    具有具有双多晶硅栅极的垂直晶体管的固态成像装置

    公开(公告)号:US08952315B2

    公开(公告)日:2015-02-10

    申请号:US12574494

    申请日:2009-10-06

    摘要: A solid-state imaging device includes: a pixel part having a photoelectric conversion part photoelectrically converting incident light to obtain signal charge; and a peripheral circuit part formed on a periphery of the pixel part on a semiconductor substrate. The pixel part having a vertical transistor that reads out the signal charge from the photoelectric conversion part and a planar transistor that processes the signal charge read out by the vertical transistor. The vertical transistor has a groove part formed on the semiconductor substrate; a gate insulator film formed on an inner surface of the groove part; a conducting layer formed on a surface of the gate insulator film on the semiconductor substrate within and around the groove part; a filling layer filling an interior of the groove part via the gate insulator film and the conducting layer; and an electrode layer connected to the conducting layer on the filling layer.

    摘要翻译: 一种固态成像装置,包括:像素部,具有光电转换部,对入射光进行光电转换,得到信号电荷; 以及形成在半导体衬底上的像素部分的周围的外围电路部分。 像素部分具有从光电转换部读出信号电荷的垂直晶体管和处理由垂直晶体管读出的信号电荷的平面晶体管。 垂直晶体管具有形成在半导体衬底上的沟槽部分; 形成在所述槽部的内表面上的栅极绝缘膜; 导电层,形成在所述半导体衬底的所述栅极绝缘膜的表面上,并且在所述沟槽部内和周围; 填充层,其经由所述栅极绝缘膜和所述导电层填充所述槽部的内部; 以及与填充层上的导电层连接的电极层。

    Solid-state imaging device and electronic apparatus
    2.
    发明授权
    Solid-state imaging device and electronic apparatus 有权
    固态成像装置和电子装置

    公开(公告)号:US08937363B2

    公开(公告)日:2015-01-20

    申请号:US13426685

    申请日:2012-03-22

    IPC分类号: H01L31/00 H01L27/146

    CPC分类号: H01L27/14636 H01L27/1464

    摘要: A solid-state imaging device includes a photoelectric conversion film which is interposed between two transparent electrodes outside a semiconductor substrate, wherein a film surface of the photoelectric conversion film is provided so as to incline with respect to a front surface of the semiconductor substrate.

    摘要翻译: 固态成像装置包括光电转换膜,该光电转换膜介于半导体衬底外部的两个透明电极之间,其中光电转换膜的膜表面设置成相对于半导体衬底的前表面倾斜。

    Positive resist composition, method of forming resist pattern, and polymeric compound
    4.
    发明授权
    Positive resist composition, method of forming resist pattern, and polymeric compound 有权
    正型抗蚀剂组合物,形成抗蚀剂图案的方法和聚合物

    公开(公告)号:US08735045B2

    公开(公告)日:2014-05-27

    申请号:US12911411

    申请日:2010-10-25

    摘要: A positive resist composition including a base component (A) which exhibits increased solubility in an alkali developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the base component (A) including a polymeric compound (A1) containing a structural unit (a0) represented by general formula (a0-1) shown below and a structural unit (a1) derived from an acrylate ester containing an acid dissociable, dissolution inhibiting group.

    摘要翻译: 一种正性抗蚀剂组合物,其包含在酸的作用下在碱性显影液中显示出增加的溶解度的碱成分(A)和暴露时产生酸的酸产生剂组分(B),所述碱成分(A)包含高分子化合物 A1),其含有由下述通式(a0-1)表示的结构单元(a0)和由含有酸解离的溶解抑制基团的丙烯酸酯衍生的结构单元(a1)。

    Resist composition, and method of forming resist pattern
    5.
    发明授权
    Resist composition, and method of forming resist pattern 有权
    抗蚀剂组合物和形成抗蚀剂图案的方法

    公开(公告)号:US08658343B2

    公开(公告)日:2014-02-25

    申请号:US13373965

    申请日:2011-12-05

    IPC分类号: G03F7/004 G03F7/039

    摘要: A resist composition including a base component (A) which exhibits changed solubility in a developing solution under the action of acid, and an acid generator component (B) which generates acid upon exposure, wherein the base component (A) contains a polymeric compound (A1) having a structural unit (a5) represented by general formula (a5-1). In formula (a5-1), R represents a hydrogen atom, an alkyl group or a halogenated alkyl group, X represents single bond or divalent linking group, W represents a cyclic alkylene group which may include an oxygen atom at arbitrary position, each of Ra and Rb independently represents a hydrogen atom or an alkyl group which may include an oxygen atom at arbitrary position, or alternatively, Ra and Rb may be bonded to each other to form a ring together with the nitrogen atom in the formula, and p represents integer of 1 to 3.

    摘要翻译: 一种抗蚀剂组合物,其包含在酸的作用下在显影溶液中显示出改变的溶解性的碱成分(A)和曝光时产生酸的酸产生剂成分(B),其中,所述碱成分(A)含有高分子化合物 A1)具有由通式(a5-1)表示的结构单元(a5)。 式(a5-1)中,R表示氢原子,烷基或卤代烷基,X表示单键或二价连接基,W表示可以在任意位置含有氧原子的环状亚烷基, Ra和Rb独立地表示氢原子或可以在任意位置包含氧原子的烷基,或者Ra和Rb可以与式中的氮原子一起形成环,p表示 1〜3的整数。

    Polycarbonate resin composition
    6.
    发明授权
    Polycarbonate resin composition 有权
    聚碳酸酯树脂组合物

    公开(公告)号:US08648165B2

    公开(公告)日:2014-02-11

    申请号:US13522138

    申请日:2011-01-13

    IPC分类号: C08G63/02 C08G64/00

    摘要: The present invention seeks to provide a resin composition which contains an aromatic polycarbonate resin and a polyester resin and which has excellent mechanical strength, flowability and thermal stability and also has excellent moist heat resistance together.The present invention is a resin composition containing 50 to 99 parts by weight of an aromatic polycarbonate resin (component A) and 1 to 50 parts by weight of a polyester resin (component B), the component B being a polyester resin polymerized in the presence of a titanium-phosphorus catalyst obtained by reacting titanium tetrabutoxide, etc., with monolauryl phosphate, etc.

    摘要翻译: 本发明寻求提供一种包含芳香族聚碳酸酯树脂和聚酯树脂并且具有优异的机械强度,流动性和热稳定性并且一起具有优异的耐湿热性的树脂组合物。 本发明是一种含有50〜99重量份芳香族聚碳酸酯树脂(A成分)和1〜50重量份聚酯树脂(B成分)的树脂组合物,B成分为聚酯树脂 通过使四丁氧基钛等与单月桂基磷酸酯等反应而得到的钛 - 磷催化剂。

    METHOD OF FORMING RESIST PATTERN AND NEGATIVE TONE-DEVELOPMENT RESIST COMPOSITION
    7.
    发明申请
    METHOD OF FORMING RESIST PATTERN AND NEGATIVE TONE-DEVELOPMENT RESIST COMPOSITION 有权
    形成电阻图案和负极色调发展电阻组合物的方法

    公开(公告)号:US20140004467A1

    公开(公告)日:2014-01-02

    申请号:US14003708

    申请日:2012-03-07

    IPC分类号: G03F7/32

    摘要: A method of forming a resist pattern including: forming a resist film on a substrate using a resist composition containing a base component (A) which exhibits decreased solubility in an organic solvent by action of an acid; exposing the resist film; and patterning by a negative-tone development using a developing solution containing the organic solvent, wherein the base component (A) contains a resin component (A1) having a structural unit (a0) which generates acid upon exposure and a structural unit (a1) derived from an acrylate ester which may have the hydrogen atom bonded to the carbon atom on the α-position substituted with a substituent and contains an acid decomposable group which exhibits increased polarity by the action of acid, and the developing solution contains a nitrile solvent.

    摘要翻译: 一种形成抗蚀剂图案的方法,包括:使用含有通过酸作用在有机溶剂中溶解度降低的基础组分(A)的抗蚀剂组合物在基材上形成抗蚀剂膜; 曝光抗蚀膜; 以及使用含有有机溶剂的显影液进行负色发展的图案化,其中,所述基材(A)含有具有曝光时产生酸的结构单元(a0)的树脂成分(A1)和结构单元(a1) 衍生自可以具有与被取代基取代的在α位上的碳原子键合的氢原子的丙烯酸酯,并且含有通过酸作用显示出极性增加的酸分解基团,显影液含有腈溶剂。

    Semiconductor device and a method of manufacturing the same
    8.
    发明授权
    Semiconductor device and a method of manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号:US08367503B2

    公开(公告)日:2013-02-05

    申请号:US13181583

    申请日:2011-07-13

    IPC分类号: H01L21/00

    摘要: A semiconductor device, including: a first group of transistors formed on a semiconductor substrate; and a second group of transistors formed on the semiconductor substrate, each of which is lower in operating voltage than each of the transistors in the first group; wherein each of the transistors in the first group includes a first gate electrode formed on the semiconductor substrate through a first gate insulating film, and a silicide layer formed on the first gate electrode; each of the transistors in the second group includes a second gate electrode formed in a trench for gate formation, formed in an insulating film above the semiconductor substrate, through a second gate insulating film; and a protective film is formed so as to cover the silicide layer on each of the first gate electrodes of the first group of transistors.

    摘要翻译: 一种半导体器件,包括:形成在半导体衬底上的第一组晶体管; 以及形成在所述半导体基板上的第二组晶体管,每个晶体管的工作电压低于所述第一组中的每个晶体管; 其中第一组中的每个晶体管包括通过第一栅极绝缘膜形成在半导体衬底上的第一栅电极和形成在第一栅电极上的硅化物层; 第二组中的每个晶体管包括形成在用于栅极形成的沟槽中的第二栅电极,其通过第二栅极绝缘膜形成在半导体衬底上方的绝缘膜中; 并且形成保护膜以覆盖第一晶体管组的每个第一栅电极上的硅化物层。

    POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN
    9.
    发明申请
    POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN 有权
    正电阻组合物和形成电阻图案的方法

    公开(公告)号:US20120329969A1

    公开(公告)日:2012-12-27

    申请号:US13539558

    申请日:2012-07-02

    IPC分类号: C08F228/06

    摘要: A positive resist composition including a base component (A) which exhibits increased solubility in an alkali developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the base component (A) including a polymeric compound (A1) containing a structural unit (a0) represented by general formula (a0-1), a structural unit (a1) derived from an acrylate ester containing an acid dissociable, dissolution inhibiting group, and a structural unit (a3) derived from an acrylate ester containing a hydroxy group-containing aliphatic hydrocarbon group represented by general formula (a3-1), and the amount of the structural unit (a3) based on the combined total of all structural units constituting the polymeric compound (A1) being in the range of 1 to 30 mol %.

    摘要翻译: 一种正性抗蚀剂组合物,其包含在酸的作用下在碱性显影液中显示出增加的溶解度的碱成分(A)和暴露时产生酸的酸产生剂组分(B),所述碱成分(A)包含高分子化合物 A1),由通式(a0-1)表示的结构单元(a0),由含有酸解离性,溶解抑制基团的丙烯酸酯衍生的结构单元(a1)和来自丙烯酸酯的结构单元(a3) 含有由通式(a3-1)表示的含羟基的脂族烃基的酯和基于构成聚合化合物(A1)的所有结构单元的总和的结构单元(a3)的量在该范围内 为1〜30摩尔%。

    Positive resist composition, method of forming resist pattern, and polymeric compound
    10.
    发明授权
    Positive resist composition, method of forming resist pattern, and polymeric compound 有权
    正型抗蚀剂组合物,形成抗蚀剂图案的方法和聚合物

    公开(公告)号:US08329378B2

    公开(公告)日:2012-12-11

    申请号:US12721240

    申请日:2010-03-10

    IPC分类号: G03F7/004 G03F7/30

    摘要: A positive resist composition including a base component (A) which exhibits increased solubility in an alkali developing solution under the action of acid, and an acid-generator component (B) which generates acid upon exposure, the base component (A) including a polymeric compound (A1) containing a structural unit (a0) having an aromatic group, a structural unit (a5) represented by general formula (a5-1) shown below, and a structural unit (a1) containing an acid-dissociable, dissolution-inhibiting group. In the formula (a5-1), R1 represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms, R2 represents a divalent linking group, and R3 represents a cyclic group containing —SO2— within the ring skeleton thereof.

    摘要翻译: 一种正极抗蚀剂组合物,其包含在酸性作用下在碱显影液中显示出增加的溶解度的碱成分(A)和暴露时产生酸的酸发生剂组分(B),所述碱成分(A)包含聚合物 含有具有芳香族基团的结构单元(a0)的化合物(A1),下述通式(a5-1)所示的结构单元(a5)和含有酸解离性,溶解抑制性的结构单元(a1) 组。 式(a5-1)中,R 1表示氢原子,碳原子数1〜5的烷基或碳原子数1〜5的卤代烷基,R 2表示二价连接基,R 3表示含有 -SO2-在其环骨架内。