发明申请
- 专利标题: METHOD OF FORMING A CONTACT STRUCTURE
- 专利标题(中): 形成接触结构的方法
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申请号: US12437390申请日: 2009-05-07
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公开(公告)号: US20090280641A1公开(公告)日: 2009-11-12
- 发明人: Dae-Hyuk Kang , Young-Hoo Kim , Chang-Ki Hong , Kun-Tack Lee , Jae-Dong Lee , Dae-Hong Eom , Jeong-Nam Han
- 申请人: Dae-Hyuk Kang , Young-Hoo Kim , Chang-Ki Hong , Kun-Tack Lee , Jae-Dong Lee , Dae-Hong Eom , Jeong-Nam Han
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 优先权: KR2008-0042251 20080507
- 主分类号: H01L21/3205
- IPC分类号: H01L21/3205
摘要:
An insulation layer may be formed on an object having a contact region. The insulation layer may be partially etched to form an opening exposing the contact region. A material layer including silicon and oxygen may be formed on the exposed contact region. A metal layer may be formed on the material layer including silicon and oxygen. The material layer including silicon and oxygen may be reacted with the metal layer to form a metal oxide silicide layer at least on the contact region. A conductive layer may be formed on the metal oxide silicide layer to fill up the opening.
公开/授权文献
- US08110499B2 Method of forming a contact structure 公开/授权日:2012-02-07