公开(公告)号：US08110499B2

公开(公告)日：2012-02-07

申请号：US12437390

申请日：2009-05-07

申请人： Dae-Hyuk Kang ,  Young-Hoo Kim ,  Chang-Ki Hong ,  Kun-Tack Lee ,  Jae-Dong Lee ,  Dae-Hong Eom ,  Jeong-Nam Han

发明人： Dae-Hyuk Kang ,  Young-Hoo Kim ,  Chang-Ki Hong ,  Kun-Tack Lee ,  Jae-Dong Lee ,  Dae-Hong Eom ,  Jeong-Nam Han

IPC分类号： H01L21/44

CPC分类号： H01L21/76843 ,  H01L21/28518 ,  H01L21/76814 ,  H01L21/76846 ,  H01L21/76855 ,  H01L23/485 ,  H01L27/24 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/00

摘要： An insulation layer may be formed on an object having a contact region. The insulation layer may be partially etched to form an opening exposing the contact region. A material layer including silicon and oxygen may be formed on the exposed contact region. A metal layer may be formed on the material layer including silicon and oxygen. The material layer including silicon and oxygen may be reacted with the metal layer to form a metal oxide silicide layer at least on the contact region. A conductive layer may be formed on the metal oxide silicide layer to fill up the opening.

摘要翻译： 可以在具有接触区域的物体上形成绝缘层。 绝缘层可以被部分蚀刻以形成暴露接触区域的开口。 可以在暴露的接触区域上形成包括硅和氧的材料层。 可以在包括硅和氧的材料层上形成金属层。 包括硅和氧的材料层可以与金属层反应，以至少在接触区域上形成金属氧化物硅化物层。 可以在金属氧化物硅化物层上形成导电层以填充开口。

公开(公告)号：US20110306197A1

公开(公告)日：2011-12-15

申请号：US13156729

申请日：2011-06-09

申请人： Young-Hoo Kim ,  Bo-Un Yoon ,  Kun-Tack Lee ,  Dae-Hyuk Kang ,  Im-Soo Park

发明人： Young-Hoo Kim ,  Bo-Un Yoon ,  Kun-Tack Lee ,  Dae-Hyuk Kang ,  Im-Soo Park

IPC分类号： H01L21/3205

CPC分类号： H01L28/82

摘要： Method of manufacturing semiconductor device are provided including forming an insulation layer having a pad on a substrate; forming an etch stop layer on the insulation layer and the pad; forming a mold structure having at least one mold layer on the etch stop layer; forming a first supporting layer on the mold structure; etching the first supporting layer and the mold structure to form a first opening exposing the etch stop layer; forming a spacer on a sidewall of the first opening; etching the etch stop layer using the spacer as an etching mask to form a second opening, different from the first opening, exposing a first portion of the pad having a first associated area; etching the etch stop layer using the spacer as an etching mask to form a third opening exposing a second portion of the pad having a second associated area, the second associated area being larger than the first associated area; and etching the mold structure to form a fourth opening having a width larger than a width of the third opening.

摘要翻译： 提供制造半导体器件的方法，包括在衬底上形成具有衬垫的绝缘层; 在所述绝缘层和所述焊盘上形成蚀刻停止层; 形成在所述蚀刻停止层上具有至少一个模制层的模具结构; 在模具结构上形成第一支撑层; 蚀刻第一支撑层和模具结构以形成暴露蚀刻停止层的第一开口; 在所述第一开口的侧壁上形成间隔件; 使用所述间隔物作为蚀刻掩模来蚀刻所述蚀刻停止层，以形成不同于所述第一开口的第二开口，暴露所述焊盘的具有第一相关区域的第一部分; 使用所述间隔物作为蚀刻掩模来蚀刻所述蚀刻停止层，以形成暴露所述焊盘的具有第二相关区域的第二部分的第三开口，所述第二相关区域大于所述第一相关区域; 并且蚀刻所述模具结构以形成宽度大于所述第三开口的宽度的第四开口。

公开(公告)号：US20110287625A1

公开(公告)日：2011-11-24

申请号：US13079202

申请日：2011-04-04

申请人： Dae-Hyuk Kang ,  Kun-Tack Lee ,  Dae-Hong Eom ,  Bo-Un Yoon ,  Jeong-Nam Han

发明人： Dae-Hyuk Kang ,  Kun-Tack Lee ,  Dae-Hong Eom ,  Bo-Un Yoon ,  Jeong-Nam Han

IPC分类号： H01L21/336

CPC分类号： H01L21/28123 ,  H01L21/3081 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/32139 ,  H01L27/11524 ,  H01L29/40114

摘要： A method of forming a pattern in a semiconductor device includes forming an etching object layer on a substrate, the etching object layer is an oxide that is substantially free of impurities. A mask is formed on the etching object layer, the mask is an oxide that includes impurities. The etching object layer is patterned using the mask as an etching mask and then the mask is removed. The mask is removed using an etchant having an etching selectivity to an oxide that is substantially free of impurities and an oxide that includes impurities during removing of the mask to limit damage to the patterned etching object layer during removal of the mask.

摘要翻译： 在半导体器件中形成图案的方法包括在基板上形成蚀刻对象层，蚀刻对象层是基本上不含杂质的氧化物。 在蚀刻对象层上形成掩模，掩模是包含杂质的氧化物。 使用掩模将蚀刻对象层图案化为蚀刻掩模，然后去除掩模。 使用具有对基本上不含杂质的氧化物的蚀刻选择性的蚀刻剂去除掩模，以及在除去掩模期间包括杂质的氧化物，以限制在去除掩模期间对图案化的蚀刻对象层的损伤。

公开(公告)号：US07704828B2

公开(公告)日：2010-04-27

申请号：US11741639

申请日：2007-04-27

申请人： Jung-Min Oh ,  Jeong-Nam Han ,  Chang-Ki Hong ,  Kun-Tack Lee ,  Dae-Hyuk Kang ,  Sung-Il Cho

发明人： Jung-Min Oh ,  Jeong-Nam Han ,  Chang-Ki Hong ,  Kun-Tack Lee ,  Dae-Hyuk Kang ,  Sung-Il Cho

IPC分类号： H01L21/8242

CPC分类号： H01L28/91

摘要： A method of fabricating a semiconductor device is provided. The method includes forming a mold for forming a storage electrode, forming sacrificial spacers at side walls of openings in the mold, forming a conductive film for a storage electrode along the inside of the openings, removing the mold by a wet etching process, removing the sacrificial spacers by a dry etching process, and sequentially forming a dielectric film and an upper electrode on the storage electrode.

摘要翻译： 提供一种制造半导体器件的方法。 该方法包括形成用于形成存储电极的模具，在模具的开口的侧壁处形成牺牲隔离物，沿着开口的内部形成用于存储电极的导电膜，通过湿法蚀刻工艺移除模具， 牺牲隔离物，并且在存储电极上依次形成电介质膜和上电极。

公开(公告)号：US07498217B2

公开(公告)日：2009-03-03

申请号：US11746761

申请日：2007-05-10

申请人： Jung-Min Oh ,  Jeong-Nam Han ,  Chang-Ki Hong ,  Kun-Tack Lee ,  Dae-Hyuk Kang ,  Woo-Gwan Shim ,  Jong-Won Lee

发明人： Jung-Min Oh ,  Jeong-Nam Han ,  Chang-Ki Hong ,  Kun-Tack Lee ,  Dae-Hyuk Kang ,  Woo-Gwan Shim ,  Jong-Won Lee

IPC分类号： H01L21/8238 ,  H01L21/8242 ,  H01L21/336

CPC分类号： H01L27/115 ,  H01L21/76229 ,  H01L27/11568

摘要： In a method of manufacturing a semiconductor device such as a SONOS type semiconductor device, a trench is formed on a substrate. An isolation layer protruding from the substrate is formed to fill the trench. After a first layer is formed on the substrate, a preliminary second layer pattern is formed on the first layer. The preliminary second layer pattern has an upper face substantially lower than or substantially equal to an upper face of the isolation layer. A third layer is formed on the preliminary second layer and the isolation layer. A fourth layer is formed on the third layer. The fourth layer, the third layer, the preliminary second layer pattern and the first layer are partially etched to form a gate structure on the substrate. Source/drain regions are formed at portions of the substrate adjacent to the gate structure.

摘要翻译： 在制造诸如SONOS型半导体器件的半导体器件的方法中，在衬底上形成沟槽。 形成从衬底突出的隔离层以填充沟槽。 在基板上形成第一层之后，在第一层上形成预备的第二层图案。 预备的第二层图案具有基本上低于或基本上等于隔离层的上表面的上表面。 在初步第二层和隔离层上形成第三层。 在第三层上形成第四层。 部分蚀刻第四层，第三层，初步第二层图案和第一层，以在基板上形成栅极结构。 源极/漏极区域形成在与栅极结构相邻的衬底的部分处。

公开(公告)号：US08211804B2

公开(公告)日：2012-07-03

申请号：US13025410

申请日：2011-02-11

申请人： Hyo-San Lee ,  Bo-Un Yoon ,  Kun-Tack Lee ,  Dae-Hyuk Kang ,  Seong-Ho Moon ,  So-Ra Han

发明人： Hyo-San Lee ,  Bo-Un Yoon ,  Kun-Tack Lee ,  Dae-Hyuk Kang ,  Seong-Ho Moon ,  So-Ra Han

IPC分类号： H01L21/311

CPC分类号： H01L21/31111 ,  H01L21/32134 ,  H01L21/76802 ,  H01L27/10852 ,  H01L27/10876 ,  H01L27/10894 ,  H01L27/11578 ,  H01L27/11582 ,  H01L28/91 ,  H01L29/4236 ,  H01L29/66621 ,  H01L29/66833 ,  H01L29/7926

摘要： In a method of forming a hole, an insulation layer is formed on a substrate, and a preliminary hole exposing the substrate is formed through the insulation layer. A photosensitive layer pattern including an organic polymer is then formed on the substrate to fill the preliminary hole. An etching gas including hydrogen fluoride (HF) or fluorine (F2) is then provided onto the photosensitive layer pattern to etch the insulation layer so that width of the preliminary hole is increased.

摘要翻译： 在形成孔的方法中，在基板上形成绝缘层，通过绝缘层形成露出基板的预备孔。 然后在基板上形成包含有机聚合物的感光层图案以填充预备孔。 然后将包含氟化氢（HF）或氟（F2）的蚀刻气体提供到感光层图案上以蚀刻绝缘层，使得预备孔的宽度增加。

公开(公告)号：US08119476B2

公开(公告)日：2012-02-21

申请号：US12906184

申请日：2010-10-18

申请人： Dae-Hyuk Kang ,  Bo-Un Yoon ,  Kun-Tack Lee ,  Woo-Gwan Shim ,  Ji-Hoon Cha ,  Im-Soo Park ,  Hyo-San Lee ,  Young-Hoo Kim ,  Jung-Min Oh

发明人： Dae-Hyuk Kang ,  Bo-Un Yoon ,  Kun-Tack Lee ,  Woo-Gwan Shim ,  Ji-Hoon Cha ,  Im-Soo Park ,  Hyo-San Lee ,  Young-Hoo Kim ,  Jung-Min Oh

IPC分类号： H01L21/8242

CPC分类号： H01L28/91 ,  H01L27/10817 ,  H01L27/10852 ,  H01L28/87

摘要： In a method of forming a capacitor, a first mold layer pattern including a first insulating material may be formed on a substrate. The first mold layer pattern may have a trench. A supporting layer including a second insulating material may be formed in the trench. The second insulating material may have an etching selectivity with respect to the first insulating material. A second mold layer may be formed on the first mold layer pattern and the supporting layer pattern. A lower electrode may be formed through the second mold layer and the first mold layer pattern. The lower electrode may make contact with a sidewall of the supporting layer pattern. The first mold layer pattern and the second mold layer may be removed. A dielectric layer and an upper electrode may be formed on the lower electrode and the supporting layer pattern.

摘要翻译： 在形成电容器的方法中，可以在基板上形成包括第一绝缘材料的第一模层图案。 第一模层图案可以具有沟槽。 可以在沟槽中形成包括第二绝缘材料的支撑层。 第二绝缘材料可以具有相对于第一绝缘材料的蚀刻选择性。 可以在第一模层图案和支撑层图案上形成第二模层。 可以通过第二模具层和第一模具层图案形成下部电极。 下电极可以与支撑层图案的侧壁接触。 可以去除第一模层图案和第二模层。 电介质层和上电极可以形成在下电极和支撑层图案上。

公开(公告)号：US07459370B2

公开(公告)日：2008-12-02

申请号：US11546420

申请日：2006-10-12

申请人： Dae-hyuk Kang ,  Jung-min Oh ,  Chang-ki Hong ,  Sang-jun Choi ,  Woo-gwan Shim

发明人： Dae-hyuk Kang ,  Jung-min Oh ,  Chang-ki Hong ,  Sang-jun Choi ,  Woo-gwan Shim

IPC分类号： H01L21/20

CPC分类号： H01L28/90 ,  H01L21/0334 ,  H01L21/31144 ,  H01L27/10852

摘要： In one aspect, a method of fabricating a semiconductor memory device is provided which includes forming a mold insulating film over first and second portions of a semiconductor substrate, where the mold insulating film includes a plurality of storage node electrode holes spaced apart over the first portion of the semiconductor substrate. The method further includes forming a plurality of storage node electrodes on inner surfaces of the storage node electrode holes, respectively, and forming a capping film which covers the storage node electrodes and a first portion of the mold insulating film located over the first portion of the semiconductor substrate, and which exposes a second portion of the mold insulating film located over the second portion of the semiconductor substrate. The method further includes selectively removing, including wet etching, the mold insulating film to expose a sidewall of at least one storage node electrode among the storage node electrodes covered by the capping film, and removing the capping film by dry etching to expose upper portions of the storage node electrodes.

摘要翻译： 一方面，提供一种制造半导体存储器件的方法，其包括在半导体衬底的第一和第二部分上形成模绝缘膜，其中所述模绝缘膜包括在所述第一部分上分开的多个存储节点电极孔 的半导体衬底。 该方法还包括分别在存储节点电极孔的内表面上形成多个存储节点电极，并且形成覆盖存储节点电极的封盖膜和位于第一部分上的模具绝缘膜的第一部分 半导体衬底，并且暴露位于半导体衬底的第二部分上方的模具绝缘膜的第二部分。 该方法还包括选择性地去除包括湿式蚀刻的模具绝缘膜，以暴露由覆盖膜覆盖的存储节点电极中的至少一个存储节点电极的侧壁，以及通过干蚀刻去除封盖膜以暴露 存储节点电极。

公开(公告)号：US20080096393A1

公开(公告)日：2008-04-24

申请号：US11907081

申请日：2007-10-09

申请人： In-Gi Kim ,  Dae-Hyuk Chung ,  Dae-Hyuk Kang

发明人： In-Gi Kim ,  Dae-Hyuk Chung ,  Dae-Hyuk Kang

IPC分类号： H01L21/461

CPC分类号： H01L21/31111 ,  H01L21/67086 ,  H01L21/76224

摘要： An apparatus for etching a semiconductor substrate may include a bath, a reaction preventing layer, and a nozzle. The bath may receive a chemical solution. Grooves may be formed at the inner wall of the bath. The reaction preventing layer may be formed on the inner wall and in the grooves of the bath to reduce or prevent a chemical reaction between the chemical solution and the bath. The nozzle may supply the chemical solution to the bath. In a method of etching a semiconductor substrate, the semiconductor substrate having trench structures and an insulation layer pattern may be prepared. The semiconductor substrate may then be dipped into the bath having the reaction preventing layer in which the chemical solution is received. The semiconductor substrate may be reacted with the chemical solution by blocking the chemical reaction between the chemical solution and the bath to etch the insulation layer pattern and the trench structure at a uniform rate.

摘要翻译： 用于蚀刻半导体衬底的设备可以包括浴，反应防止层和喷嘴。 浴可以接受化学溶液。 槽可以形成在浴的内壁。 反应防止层可以形成在浴的内壁和凹槽中，以减少或防止化学溶液和浴之间的化学反应。 喷嘴可以将化学溶液供应到浴中。 在蚀刻半导体衬底的方法中，可以制备具有沟槽结构和绝缘层图案的半导体衬底。 然后将半导体衬底浸入具有接收化学溶液的反应防止层的浴中。 半导体衬底可以通过阻止化学溶液和浴之间的化学反应与化学溶液反应，以均匀的速率蚀刻绝缘层图案和沟槽结构。

公开(公告)号：US20080044971A1

公开(公告)日：2008-02-21

申请号：US11832715

申请日：2007-08-02

申请人： Dae-Hyuk KANG ,  Chang-Ki HONG ,  Kun-Tack LEE ,  Im-Soo PARK ,  Dong-Gyun HAN ,  Mong-Sup LEE ,  Jung-Min OH

发明人： Dae-Hyuk KANG ,  Chang-Ki HONG ,  Kun-Tack LEE ,  Im-Soo PARK ,  Dong-Gyun HAN ,  Mong-Sup LEE ,  Jung-Min OH

IPC分类号： H01L21/8242 ,  H01L21/44

CPC分类号： H01L28/91 ,  H01L27/10814 ,  H01L27/10817 ,  H01L27/10852

摘要： A method for fabricating a semiconductor device is disclosed. The method includes forming an etch stop layer on a substrate, forming a mold layer on the substrate, and forming an opening exposing the substrate by patterning the mold layer and the etch stop layer, wherein the opening includes a lower portion defined by the etch stop layer and a middle portion. The method further includes enlarging the lower portion by etching a side portion of the etch stop layer exposed by the opening using an etching solution including sulfuric acid and water; and forming a lower electrode on an inner surface of the opening including the enlarged lower portion, wherein, after enlarging the lower portion, a width of the lower portion is greater than a width of the middle portion.

摘要翻译： 公开了一种制造半导体器件的方法。 该方法包括在衬底上形成蚀刻停止层，在衬底上形成模具层，以及通过图案化模具层和蚀刻停止层形成露出衬底的开口，其中开口包括由蚀刻停止层限定的下部 层和中间部分。 该方法还包括通过使用包括硫酸和水的蚀刻溶液蚀刻由开口暴露的蚀刻停止层的侧部来扩大下部; 以及在包括所述扩大的下部的开口的内表面上形成下电极，其中，在扩大所述下部之后，所述下部的宽度大于所述中间部的宽度。