发明申请
US20090283736A1 NONVOLATILE MEMORY ELEMENT, MANUFACTURING METHOD THEREOF, AND NONVOLATILE SEMICONDUCTOR APPARATUS USING THE NONVOLATILE MEMORY ELEMENT
有权
非易失性存储元件，其制造方法和使用非易失性存储元件的非易失性半导体器件
- 专利标题： NONVOLATILE MEMORY ELEMENT, MANUFACTURING METHOD THEREOF, AND NONVOLATILE SEMICONDUCTOR APPARATUS USING THE NONVOLATILE MEMORY ELEMENT
- 专利标题（中）： 非易失性存储元件，其制造方法和使用非易失性存储元件的非易失性半导体器件
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申请号： US12307211申请日： 2008-03-26
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公开(公告)号： US20090283736A1公开(公告)日： 2009-11-19
- 发明人: Yoshihiko Kanzawa , Koji Katayama , Satoru Fujii , Shunsaku Muraoka , Koichi Osano , Satoru Mitani , Ryoko Miyanaga , Takeshi Takagi , Kazuhlko Shimakawa
- 申请人： Yoshihiko Kanzawa , Koji Katayama , Satoru Fujii , Shunsaku Muraoka , Koichi Osano , Satoru Mitani , Ryoko Miyanaga , Takeshi Takagi , Kazuhlko Shimakawa
- 优先权： JP2007-149032 20070605
- 国际申请： PCT/JP2008/000745 WO 20080326
- 主分类号： H01L45/00
- IPC分类号： H01L45/00 ; H01L21/16 ; H01L29/12
摘要：
A nonvolatile memory element comprises a first electrode layer (103), a second electrode (107), and a resistance variable layer (106) which is disposed between the first electrode layer (103) and the second electrode layer (107), a resistance value of the resistance variable layer varying reversibly according to electric signals having different polarities which are applied between the electrodes (103), (107), wherein the resistance variable layer (106) has a first region comprising a first oxygen-deficient tantalum oxide having a composition represented by TaOx (0
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