发明申请
- 专利标题: Anti-Reflection Structures For CMOS Image Sensors
- 专利标题(中): CMOS图像传感器的防反射结构
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申请号: US12120413申请日: 2008-05-14
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公开(公告)号: US20090283807A1公开(公告)日: 2009-11-19
- 发明人: James W. Adkisson , John J. Ellis-Monaghan , Jeffrey P. Gambino , Charles F. Musante
- 申请人: James W. Adkisson , John J. Ellis-Monaghan , Jeffrey P. Gambino , Charles F. Musante
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L31/0232
- IPC分类号: H01L31/0232
摘要:
Optical structures having an array of protuberances between two layers having different refractive indices are provided. The array of protuberances has vertical and lateral dimensions less than the wavelength range of lights detectable by a photodiode of a CMOS image sensor. The array of protuberances provides high transmission of light with little reflection. The array of protuberances may be provided over a photodiode, in a back-end-of-line interconnect structure, over a lens for a photodiode, on a backside of a photodiode, or on a window of a chip package.
公开/授权文献
- US07759755B2 Anti-reflection structures for CMOS image sensors 公开/授权日:2010-07-20
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