发明申请
US20090291211A1 Apparatus for atomic layer deposition and method of atomic layer deposition using the same
审中-公开
用于原子层沉积的装置和使用其的原子层沉积的方法
- 专利标题: Apparatus for atomic layer deposition and method of atomic layer deposition using the same
- 专利标题(中): 用于原子层沉积的装置和使用其的原子层沉积的方法
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申请号: US12292595申请日: 2008-11-21
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公开(公告)号: US20090291211A1公开(公告)日: 2009-11-26
- 发明人: Myung-kwan Ryu , Kyung-bae Park , Sang-yoon Lee , Tae-sang Kim , Jang-yeon Kwon , Byung-wook Yoo , Kyung-seok Son , Ji-sim Jung
- 申请人: Myung-kwan Ryu , Kyung-bae Park , Sang-yoon Lee , Tae-sang Kim , Jang-yeon Kwon , Byung-wook Yoo , Kyung-seok Son , Ji-sim Jung
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 优先权: KR10-2008-0048676 20080526
- 主分类号: C23C16/54
- IPC分类号: C23C16/54 ; B05B3/18 ; B05B1/18
摘要:
Example embodiments provide an atomic layer deposition apparatus and a method of depositing an atomic layer using the atomic layer deposition apparatus. The atomic layer deposition apparatus may include a reaction chamber, a substrate supporter installed in the reaction chamber to support a substrate, and a shower head that is disposed above the substrate supporter and has at least one nozzle set that simultaneously inject a first source gas, a second source gas, and a purge gas onto the substrate. The method of depositing an atomic layer may include moving at least one of the substrate and the shower head in a first direction and simultaneously depositing at least one first atomic layer and at least one second atomic layer on the substrate by injecting the first source gas, the second source gas, and the purge gas through the shower head while the moving operation is performed.
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