发明申请
- 专利标题： METHOD FOR PREPARING P-TYPE POLYSILICON GATE STRUCTURE
- 专利标题（中）： 制备P型多晶硅结构的方法
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申请号： US12124101申请日： 2008-05-20
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公开(公告)号： US20090291548A1公开(公告)日： 2009-11-26
- 发明人: YUAN MING CHANG , CHENG DA WU , DA YU CHUANG , YEN TA CHEN
- 申请人： YUAN MING CHANG , CHENG DA WU , DA YU CHUANG , YEN TA CHEN
- 申请人地址： TW Hsinchu
- 专利权人： PROMOS TECHNOLOGIES INC.
- 当前专利权人： PROMOS TECHNOLOGIES INC.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L21/28
- IPC分类号： H01L21/28
摘要：
A method for preparing a P-type polysilicon gate structure comprises the steps of forming a gate oxide layer on a substrate, forming an N-type polysilicon layer on the gate oxide layer, performing a first implanting process to convert the N-type polysilicon layer into a P-type polysilicon layer, performing a second implanting process to implant P-type dopants into a portion of the P-type polysilicon layer near the interface between the gate oxide layer and the P-type polysilicon layer, and performing a thermal treating process at a predetermined temperature for a predetermined period to complete the P-type polysilicon gate structure.
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