发明申请
- 专利标题： Threshold Adjustment for High-K Gate Dielectric CMOS
- 专利标题（中）： 高K栅介质CMOS的阈值调整
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申请号： US12535554申请日： 2009-08-04
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公开(公告)号： US20090291553A1公开(公告)日： 2009-11-26
- 发明人: Bruce B. Doris , Eduard Albert Cartier , Vijay Narayanan , Vamsi Paruchuri
- 申请人： Bruce B. Doris , Eduard Albert Cartier , Vijay Narayanan , Vamsi Paruchuri
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238
摘要：
A CMOS structure is disclosed in which a first type FET has an extremely thin oxide liner. This thin liner is capable of preventing oxygen from reaching the high-k dielectric gate insulator of the first type FET. A second type FET device of the CMOS structure has a thicker oxide liner. As a result, an oxygen exposure is capable to shift the threshold voltage of the second type of FET, without affecting the threshold value of the first type FET. The disclosure also teaches methods for producing the CMOS structure in which differing type of FET devices have differing thickness liners, and the threshold values of the differing type of FET devices is set independently from one another.
公开/授权文献
- US08187961B2 Threshold adjustment for high-K gate dielectric CMOS 公开/授权日：2012-05-29
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