发明申请
US20090294909A1 N-type group III nitride-based compound semiconductor and production method therefor
有权
N型III族氮化物系化合物半导体及其制造方法
- 专利标题: N-type group III nitride-based compound semiconductor and production method therefor
- 专利标题(中): N型III族氮化物系化合物半导体及其制造方法
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申请号: US12453743申请日: 2009-05-20
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公开(公告)号: US20090294909A1公开(公告)日: 2009-12-03
- 发明人: Seiji Nagai , Shiro Yamazaki , Yasuhide Yakushi , Takayuki Sato , Makoto Iwai , Katsuhiro Imai , Yusuke Mori , Yasuo Kitaoka
- 申请人: Seiji Nagai , Shiro Yamazaki , Yasuhide Yakushi , Takayuki Sato , Makoto Iwai , Katsuhiro Imai , Yusuke Mori , Yasuo Kitaoka
- 申请人地址: JP Osaka
- 专利权人: OSAKA UNIVERSITY
- 当前专利权人: OSAKA UNIVERSITY
- 当前专利权人地址: JP Osaka
- 优先权: JP2008-134836 20080522
- 主分类号: H01L29/20
- IPC分类号: H01L29/20 ; H01L21/20
摘要:
An object of the present invention is to realize, by the flux process, the production of a high-quality n-type semiconductor crystal having high concentration of electrons. The method of the invention for producing an n-type Group III nitride-based compound semiconductor by the flux process, the method including preparing a melt by melting at least a Group III element by use of a flux; supplying a nitrogen-containing gas to the melt; and growing an n-type Group III nitride-based compound semiconductor crystal on a seed crystal from the melt. In the method, carbon and germanium are dissolved in the melt, and germanium is incorporated as a donor into the semiconductor crystal, to thereby produce an n-type semiconductor crystal.The mole percentage of germanium to gallium in the melt is 0.05 mol % to 0.5 mol %, and the mole percentage of carbon to sodium is 0.1 mol % to 3.0 mol %.