发明申请
- 专利标题： DEEP TRENCH IN A SEMICONDUCTOR STRUCTURE
- 专利标题（中）： DEEP TRENCH在半导体结构中
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申请号： US12538193申请日： 2009-08-10
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公开(公告)号： US20090294926A1公开(公告)日： 2009-12-03
- 发明人: June Cline , Dinh Dang , Mark Lagerquist , Jeffrey C. Maling , Lisa Y. Ninomiya , Bruce W. Porth , Steven M. Shank , Jessica A. Trapasso
- 申请人： June Cline , Dinh Dang , Mark Lagerquist , Jeffrey C. Maling , Lisa Y. Ninomiya , Bruce W. Porth , Steven M. Shank , Jessica A. Trapasso
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L29/06
- IPC分类号： H01L29/06
摘要：
A semiconductor structure. A hard mask layer is on a top substrate surface of a semiconductor substrate. The hard mask layer includes a hard mask layer opening through which a portion of the top substrate surface is exposed to a surrounding ambient. The hard mask layer includes a pad oxide layer on the top substrate surface, a nitride layer on the pad oxide layer, a BSG (borosilicate glass) layer on top of the nitride layer, and an ARC (anti-reflective coating) layer on top of the BSG layer. A BSG side wall surface of the BSG layer is exposed to the surrounding ambient through the hard mask layer opening.
公开/授权文献
- US07893479B2 Deep trench in a semiconductor structure 公开/授权日：2011-02-22
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