Invention Application
- Patent Title: Diodes, And Methods Of Forming Diodes
- Patent Title (中): 二极管和形成二极管的方法
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Application No.: US12128334Application Date: 2008-05-28
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Publication No.: US20090294967A1Publication Date: 2009-12-03
- Inventor: Gurtej S. Sandhu , Bhaskar Srinivasan
- Applicant: Gurtej S. Sandhu , Bhaskar Srinivasan
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/04

Abstract:
Some embodiments include methods of forming diodes. The methods may include oxidation of an upper surface of a conductive electrode to form an oxide layer over the conductive electrode. In some embodiments, the methods may include formation of an oxidizable material over a conductive electrode, and subsequent oxidation of the oxidizable material to form an oxide layer over the conductive electrode. In some embodiments, the methods may include formation of a metal halide layer over a conductive electrode. Some embodiments include diodes that contain a metal halide layer between a pair of diode electrodes.
Public/Granted literature
- US07811840B2 Diodes, and methods of forming diodes Public/Granted day:2010-10-12
Information query
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