发明申请
- 专利标题: Power Ic Device and Method of Manufacturing Same
- 专利标题(中): 电力Ic设备及其制造方法相同
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申请号: US12308057申请日: 2007-05-31
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公开(公告)号: US20090302382A1公开(公告)日: 2009-12-10
- 发明人: Alberto O. Adan , Mitsuhiro Kikuta , Akinobu Teramoto , Tadahiro Ohmi , Hiroo Yabe , Takanori Watanabe
- 申请人: Alberto O. Adan , Mitsuhiro Kikuta , Akinobu Teramoto , Tadahiro Ohmi , Hiroo Yabe , Takanori Watanabe
- 优先权: JP2006-158374 20060607
- 国际申请: PCT/JP2007/061054 WO 20070531
- 主分类号: H01L27/088
- IPC分类号: H01L27/088 ; H01L21/8238 ; H01L29/78 ; H01L21/336 ; H01L27/092 ; H01L21/8234
摘要:
In one embodiment of the present invention, a power IC device is disclosed containing a power MOS transistor with a low ON resistance and a surface channel MOS transistor with a high operation speed. There is also provided a method of manufacturing such a device. A chip has a surface of which the planar direction is not less than −8° and not more than +8° off a silicon crystal face. The p-channel trench power MOS transistor includes a trench formed vertically from the surface of the chip, a gate region in the trench, an inversion channel region on a side wall of the trench, a source region in a surface layer of the chip, and a drain region in a back surface layer of the chip. The surface channel MOS transistor has an inversion channel region fabricated so that an inversion channel current flows in a direction not less than −8° and not more than +8° off the silicon crystal direction.
公开/授权文献
- US07902595B2 Power IC device and method of manufacturing same 公开/授权日:2011-03-08
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