公开(公告)号：US09453277B2

公开(公告)日：2016-09-27

申请号：US14133935

申请日：2013-12-19

申请人： Takanori Watanabe ,  Asahiro Sakata ,  Hideaki Iwamura

发明人： Takanori Watanabe ,  Asahiro Sakata ,  Hideaki Iwamura

IPC分类号： C23C8/26 ,  C22C19/03 ,  C23C8/24 ,  C21D1/06 ,  C21D1/76 ,  C22C19/05 ,  C23C8/02 ,  C23C8/34 ,  C23C8/80 ,  F27B5/04 ,  F27D7/02 ,  F27D7/06

CPC分类号： C23C8/24 ,  C21D1/06 ,  C21D1/76 ,  C22C19/055 ,  C22C19/056 ,  C23C8/02 ,  C23C8/34 ,  C23C8/80 ,  F27B5/04 ,  F27D7/02 ,  F27D7/06

摘要： A furnace of heat treatment capable of keeping a stable nitriding quality for a long period of time is provided. The furnace of heat treatment performs a halogenation treatment and a nitriding treatment by heating a steel material under a predetermined atmosphere. An alloy containing Ni ranging between 50 mass % or more and 80 mass % or less and Fe ranging between 0 mass % or more and 20 mass % or less is used as a material of surfaces of core internals exposed to a treatment space where the nitriding treatment is performed. Accordingly, a nitriding reaction is hardly caused on the surfaces of the core internals, and the halogenation treatment and the nitriding treatment to an article to be treated can be stably executed for a long period of time. Further, a nitrided layer can be stably formed according to purposes on any types of steel materials including a steel type hard to be nitride.

摘要翻译： 提供能够长时间保持稳定的氮化质量的热处理炉。 热处理炉通过在预定的气氛下加热钢材进行卤化处理和氮化处理。 使用包含Ni在50质量％以上至80质量％以下的Fe和0质量％以上至20质量％以下的Fe的合金作为暴露于氮化处理空间的芯部内部材料的表面的材料 进行治疗。 因此，核心内部的表面几乎不发生氮化反应，能够长时间稳定地进行对被处理物的卤化处理和氮化处理。 此外，氮化层可以根据目的对包括难以氮化的钢的任何类型的钢材进行稳定地形成。

公开(公告)号：US08798514B2

公开(公告)日：2014-08-05

申请号：US13484960

申请日：2012-05-31

申请人： Masashi Tanaka ,  Kohei Okayasu ,  Takanori Watanabe ,  Keisuke Fujita

发明人： Masashi Tanaka ,  Kohei Okayasu ,  Takanori Watanabe ,  Keisuke Fujita

IPC分类号： G03G15/20

CPC分类号： G03G15/2053

摘要： Image fixing apparatus for fixing a toner image through a nip, the apparatus including a cylindrical film; a nip forming member contacting an inner surface of the film; a pressing rotatable member forming the nip in cooperation with the nip forming member with the film interposed therebetween; and a regulating member for regulating movement of the film in a direction of a generatrix of the film, wherein the regulating member has an opposing surface opposing an edge of an end portion of the film with respect to the direction of the generatrix, and the opposing surface has a regulation region for regulating the edge of the film when the film is driven and moves in the generatrix direction, wherein the regulation region is narrower in a downstream side of a center portion of the nip than in an upstream side thereof with respect to a sheet feeding direction.

摘要翻译： 图像定影装置，用于通过辊隙固定调色剂图像，该装置包括圆柱形膜; 与所述膜的内表面接触的辊隙形成部件; 与辊隙形成构件协同地形成夹持部的压制可旋转构件，其间插入有膜; 以及调节构件，用于调节所述膜在所述膜的母线方向上的移动，其中所述调节构件具有相对于所述母线的方向与所述膜的端部的边缘相对的相对表面，并且所述相对的 表面具有用于调节膜的边缘的调节区域，当膜被驱动并且沿母线方向移动时，调节区域在辊隙的中心部分的下游侧比在其上游侧相对于 送纸方向。

公开(公告)号：US20140102593A1

公开(公告)日：2014-04-17

申请号：US14133935

申请日：2013-12-19

申请人： Takanori Watanabe ,  Asahiro Sakata ,  Hideaki Iwamura

发明人： Takanori Watanabe ,  Asahiro Sakata ,  Hideaki Iwamura

IPC分类号： C23C8/24 ,  C23C8/80

CPC分类号： C23C8/24 ,  C21D1/06 ,  C21D1/76 ,  C22C19/055 ,  C22C19/056 ,  C23C8/02 ,  C23C8/34 ,  C23C8/80 ,  F27B5/04 ,  F27D7/02 ,  F27D7/06

摘要： A furnace of heat treatment capable of keeping a stable nitriding quality for a long period of time is provided. The furnace of heat treatment performs a halogenation treatment and a nitriding treatment by heating a steel material under a predetermined atmosphere. An alloy containing Ni ranging between 50 mass % or more and 80 mass % or less and Fe ranging between 0 mass % or more and 20 mass % or less is used as a material of surfaces of core internals exposed to a treatment space where the nitriding treatment is performed. Accordingly, a nitriding reaction is hardly caused on the surfaces of the core internals, and the halogenation treatment and the nitriding treatment to an article to be treated can be stably executed for a long period of time. Further, a nitrided layer can be stably formed according to purposes on any types of steel materials including a steel type hard to be nitride.

摘要翻译： 提供能够长时间保持稳定的氮化质量的热处理炉。 热处理炉通过在预定的气氛下加热钢材进行卤化处理和氮化处理。 使用包含Ni在50质量％以上至80质量％以下的Fe和0质量％以上至20质量％以下的Fe的合金作为暴露于氮化处理空间的芯部内部的表面的材料 进行治疗。 因此，核心内部的表面几乎不发生氮化反应，能够长时间稳定地进行对被处理物的卤化处理和氮化处理。 此外，氮化层可以根据目的对包括难以氮化的钢的任何类型的钢材进行稳定地形成。

公开(公告)号：US20140102592A1

公开(公告)日：2014-04-17

申请号：US14123540

申请日：2012-04-19

申请人： Koji Nishikawa ,  Hisao Fujikawa ,  Takanori Watanabe ,  Hideaki Iwamura ,  Morihiro Fujita

发明人： Koji Nishikawa ,  Hisao Fujikawa ,  Takanori Watanabe ,  Hideaki Iwamura ,  Morihiro Fujita

IPC分类号： C23C8/26

CPC分类号： C23C8/26 ,  C21D9/40 ,  C23C8/02 ,  C23C8/80

摘要： To provide a steel product excelling in both corrosion resistance and adhesion. A steel product having a nitride layer and a nitrogen diffused layer formed on the surface of a steel base material is provided. The nitride layer includes a first compound layer formed on a nitrogen diffused layer side and a second compound layer formed on a surface side of the first compound layer. The first compound layer has an ε-structure mainly made of Fe3N, and the second compound layer has a higher nitrogen concentration than the first compound layer and has a concavoconvex formed on the surface thereof. Thus, the nitride layer having excellent adhesion, an extremely small carbon containing amount, and high corrosion resistance can be formed.

摘要翻译： 提供优异的耐腐蚀性和附着性的钢制品。 提供了在钢基材的表面上形成有氮化物层和氮扩散层的钢制品。 氮化物层包括在氮扩散层侧形成的第一化合物层和形成在第一化合物层的表面侧上的第二化合物层。 第一化合物层具有主要由Fe 3 N制成的结构，第二化合物层的氮浓度高于第一化合物层，并且在其表面上形成凹凸。 因此，可以形成具有优异的粘附性，极小碳含量和高耐腐蚀性的氮化物层。

公开(公告)号：US08570418B2

公开(公告)日：2013-10-29

申请号：US13132968

申请日：2010-01-26

申请人： Takanori Watanabe

发明人： Takanori Watanabe

IPC分类号： H04N3/14 ,  H04N5/335 ,  H01L27/146 ,  H01L21/00

CPC分类号： H01L27/1463 ,  H01L27/1464 ,  H01L27/14689

摘要： A photoelectric conversion apparatus (100) comprises: multiple photoelectric converting units (PD) disposed in a semiconductor substrate; (SB) and isolation portions (103,104,105,106) disposed in the semiconductor substrate. Each photoelectric converting unit includes: a second semiconductor region (107); a third semiconductor region, (109) disposed below the second semiconductor region(107) and a fourth semiconductor region (102) disposed below the third semiconductor region, and each isolation portion includes: a fifth semiconductor region, (104) disposed at a location that is deeper than the surface of the semiconductor substrate and at least extending laterally to the second semiconductor region, containing a first conductivity type impurity; and a sixth semiconductor region,(105) disposed below the fifth semiconductor region and at least extending laterally to the third semiconductor region, containing the first conductivity type impurity, and the diffusion coefficient of the impurity contained in the fifth semiconductor region is lower than the diffusion coefficient of the impurity contained in the sixth semiconductor region.

摘要翻译： 光电转换装置（100）包括：设置在半导体衬底中的多个光电转换单元（PD）; （SB）和设置在半导体衬底中的隔离部分（103,104,105,106）。 每个光电转换单元包括：第二半导体区域（107）; 设置在所述第二半导体区域（107）下方的第三半导体区域（109）和设置在所述第三半导体区域下方的第四半导体区域（102），并且每个隔离部分包括：第五半导体区域（104），设置在位置 其比半导体衬底的表面更深，并且至少横向延伸到包含第一导电类型杂质的第二半导体区域; 以及第六半导体区域（105），其设置在所述第五半导体区域的下方，并且至少横向延伸到所述第三半导体区域，所述第三半导体区域包含所述第一导电型杂质，并且所述第五半导体区域中包含的杂质的扩散系数低于 包含在第六半导体区域中的杂质的扩散系数。

公开(公告)号：US08395862B2

公开(公告)日：2013-03-12

申请号：US13530433

申请日：2012-06-22

申请人： Takanori Watanabe ,  Hiroshi Iwai ,  Tomoyuki Tashiro

发明人： Takanori Watanabe ,  Hiroshi Iwai ,  Tomoyuki Tashiro

IPC分类号： G11B17/02

CPC分类号： G11B19/2009 ,  G11B19/2045 ,  H02K3/28

摘要： The disk drive device includes a base member, a hub, a bearing unit which is arranged on the base member and which rotatably supports the hub, and a spindle drive unit which drives the hub to rotate. The spindle drive unit includes a stator core having a salient pole, a coil wound around the salient pole and a magnet opposed to the salient pole. The hub formed of magnetic material includes an outer cylinder portion engaged with an inner circumference of a recording disk and an inner cylinder portion to which an outer circumference of the magnet is fixed. The base member having a wire hole through which a wire from the coil passes, and a concavity that is formed at a bottom surface of the base member wherein the wire passes through the wire hole along a bottom face of the base member to a wiring member at the concavity.

摘要翻译： 盘驱动装置包括基座构件，轮毂，布置在基座构件上并且可旋转地支撑轮毂的轴承单元和驱动轮毂旋转的主轴驱动单元。 主轴驱动单元包括具有凸极的定子芯，缠绕在凸极上的线圈和与凸极相对的磁体。 由磁性材料构成的毂包括与记录盘的内周接合的外筒部和固定有磁体的外周的内筒部。 所述基部构件具有线圈，线圈通过该线孔，并且形成在所述基座构件的底面的凹部，其中所述线材沿着所述基座构件的底面穿过所述线孔，至所述布线构件 在凹处。

公开(公告)号：US08293561B2

公开(公告)日：2012-10-23

申请号：US13442235

申请日：2012-04-09

申请人： Takanori Watanabe ,  Tetsuya Itano ,  Mahito Shinohara

发明人： Takanori Watanabe ,  Tetsuya Itano ,  Mahito Shinohara

IPC分类号： H04N5/335

CPC分类号： H04N5/3598 ,  H04N5/3595 ,  H04N5/374

摘要： There is provided an image pickup device, including a photoelectric conversion element converting light into charges, a transfer gate for transferring the converted charges to a floating node, a source follower transistor for outputting a signal based on a voltage of the floating node to a signal line, and a clip circuit clipping the signal line at a first voltage and a second voltage.

摘要翻译： 提供了一种图像拾取装置，包括将光转换成电荷的光电转换元件，用于将转换的电荷转移到浮动节点的传输门，源极跟随器晶体管，用于基于浮动节点的电压将信号输出到信号 线和钳位电路，在第一电压和第二电压下限幅信号线。

公开(公告)号：US08222682B2

公开(公告)日：2012-07-17

申请号：US13079381

申请日：2011-04-04

申请人： Takanori Watanabe ,  Masaaki Iwane ,  Yukihiro Kuroda ,  Masahiro Kobayashi ,  Yasushi Nakata

发明人： Takanori Watanabe ,  Masaaki Iwane ,  Yukihiro Kuroda ,  Masahiro Kobayashi ,  Yasushi Nakata

IPC分类号： H01L31/062

CPC分类号： H01L27/14643 ,  H01L27/14603 ,  H01L27/14641

摘要： A photoelectric conversion apparatus includes a plurality of photoelectric conversion elements configured to convert incident light to electric carriers, an amplifier MOS transistor shared by the plurality of photoelectric conversion elements, a plurality of floating diffusions connected to the gate electrode of the amplifier MOS transistor, and a plurality of transfer MOS transistors arranged corresponding to the respective photoelectric conversion elements, each of the transfer MOS transistors transferring electric carriers from corresponding one of the photoelectric conversion elements to corresponding one of the floating diffusions. In such a photoelectric conversion apparatus, at least two of the floating diffusions are electrically connected to each other with a wiring line included in the same wiring layer as the gate electrode of the amplifier MOS transistor.

摘要翻译： 一种光电转换装置，包括将入射光转换成电载体的多个光电转换元件，由多个光电转换元件共用的放大器MOS晶体管，与放大器MOS晶体管的栅电极连接的多个浮置扩散，以及 对应于各个光电转换元件布置的多个传输MOS晶体管，每个传输MOS晶体管将电载体从相应的一个光电转换元件传输到相应的一个浮置扩散。 在这种光电转换装置中，至少两个浮置扩散部通过与放大器MOS晶体管的栅电极相同的布线层所包含的布线彼此电连接。

公开(公告)号：US08110885B2

公开(公告)日：2012-02-07

申请号：US11216006

申请日：2005-09-01

申请人： Satoko Iida ,  Takanori Watanabe

发明人： Satoko Iida ,  Takanori Watanabe

IPC分类号： H01L31/0232 ,  H01L27/146

CPC分类号： H01L27/1463 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L31/02327

摘要： Provided is a MOS type solid state imaging device, including a semiconductor substrate, a plurality of pixels arranged on the semiconductor substrate, each pixel having a light receiving element for generating a signal charge due to incident light, and a MOS transistor for reading the signal charge, and a hydrogen supply film arranged on the semiconductor substrate over the plurality of pixels and having a region corresponding to the light receiving element at least a part of which has a film thickness greater than the other part of the region.

摘要翻译： 提供了一种MOS型固态成像装置，包括半导体衬底，布置在半导体衬底上的多个像素，每个像素具有用于产生由于入射光引起的信号电荷的光接收元件，以及用于读取信号的MOS晶体管 电荷以及布置在多个像素上的半导体衬底上的氢供应膜，并且具有对应于至少一部分具有大于该区域的另一部分的膜厚度的光接收元件的区域。

公开(公告)号：US07920192B2

公开(公告)日：2011-04-05

申请号：US11774270

申请日：2007-07-06

申请人： Takanori Watanabe ,  Tetsuya Itano ,  Hidekazu Takahashi ,  Shunsuke Takimoto ,  Kotaro Abukawa ,  Hiroaki Naruse ,  Shigeru Nishimura ,  Masatsugu Itahashi

发明人： Takanori Watanabe ,  Tetsuya Itano ,  Hidekazu Takahashi ,  Shunsuke Takimoto ,  Kotaro Abukawa ,  Hiroaki Naruse ,  Shigeru Nishimura ,  Masatsugu Itahashi

IPC分类号： H04N5/335

CPC分类号： H01L27/14616 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14689

摘要： A photoelectric conversion device includes a photoelectric conversion region having a plurality of photoelectric conversion elements and a first MOS transistor configured to read a signal in response to an electric charge of each photoelectric conversion element; and a peripheral circuit region having a second MOS transistor configured to drive the first MOS transistor and/or amplify the signal read from the photoelectric conversion region, the photoelectric conversion region and the peripheral circuit region being located on the same semiconductor substrate, wherein an impurity concentration in a drain of the first MOS transistor is lower than an impurity concentration in a drain of the second MOS transistor.

摘要翻译： 光电转换装置包括具有多个光电转换元件的光电转换区域和被配置为响应每个光电转换元件的电荷读取信号的第一MOS晶体管; 以及具有第二MOS晶体管的外围电路区域，被配置为驱动第一MOS晶体管和/或放大从光电转换区域读取的信号，光电转换区域和外围电路区域位于同一半导体衬底上，其中杂质 第一MOS晶体管的漏极中的浓度低于第二MOS晶体管的漏极中的杂质浓度。