发明申请
US20090302419A1 METHOD OF MODIFYING SURFACE AREA AND ELECTRONIC DEVICE 审中-公开
修改表面区域和电子设备的方法

METHOD OF MODIFYING SURFACE AREA AND ELECTRONIC DEVICE
摘要:
In the method a first layer, particularly of amorphous silicon, is deposited on the surface of a substrate with trenches. Part of this surface is covered with a protective layer. The first layer is thereafter maskless removed with a dry etching treatment on the substrate surface while it is kept within the trench.
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