-
公开(公告)号：US20090302419A1
公开(公告)日：2009-12-10
申请号：US11720322
申请日：2005-11-25
IPC分类号： H01L27/06 , H01L21/02 , H01L21/302
CPC分类号： H01L28/84 , H01L27/1087 , H01L29/66181
摘要： In the method a first layer, particularly of amorphous silicon, is deposited on the surface of a substrate with trenches. Part of this surface is covered with a protective layer. The first layer is thereafter maskless removed with a dry etching treatment on the substrate surface while it is kept within the trench.
摘要翻译： 在该方法中，特别是非晶硅的第一层被沉积在具有沟槽的衬底的表面上。 该表面的一部分被保护层覆盖。 此后，第一层通过在衬底表面上进行干蚀刻处理而被除去，同时保持在沟槽内。
-
公开(公告)号：US20080280435A1
公开(公告)日：2008-11-13
申请号：US12092605
申请日：2006-11-03
申请人： Johan H. Klootwijk , Antonius L. A. M. Kemmeren , Ronald Dekker , Eric Cornelis Egbertus Van Grunsven , Freddy Roozeboom
发明人： Johan H. Klootwijk , Antonius L. A. M. Kemmeren , Ronald Dekker , Eric Cornelis Egbertus Van Grunsven , Freddy Roozeboom
IPC分类号： H01L21/768
CPC分类号： H01L21/76898 , H01L21/764 , H01L23/481 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to a method for producing a substrate with at least one covered via that electrically and preferably also thermally connects a first substrate side with an opposite second substrate side. The processing involves forming a trench on a the first substrate side remains and covering the trench with a permanent layer on top of a temporary, sacrificial cap-layer, which is decomposed in a thermal process step. The method of the invention provides alternative ways to remove decomposition products of the sacrificial cap-layer material without remaining traces or contamination even in the presence of the permanent layer This is, according to a first aspect of the invention, achieved by providing the substrate trench with an overcoat layer that has holes. The holes in the overcoat layer leave room for the removal of the decomposition products of the cap-layer material. According to the second aspect of the invention, opening the covered trench from the second substrate side and allowing the cap-layer material to be removed through that opening provides a solution. Both methods of the present invention are based on the common idea of using a temporary cap-layer even in a situation where the substrate opening is permanently covered before the removal of the temporary cap-layer
摘要翻译： 本发明涉及一种制造具有至少一个覆盖通孔的基板的方法，所述至少一个覆盖通孔电连接并优选地将第一基板侧与相对的第二基板侧热连接。 所述处理涉及在第一基板侧上形成沟槽，并在热处理步骤中分解的临时牺牲盖层的顶部上保留并覆盖具有永久层的沟槽。 本发明的方法提供了即使在存在永久层的情况下除去牺牲帽层材料的分解产物而不留下痕迹或污染物的替代方法。根据本发明的第一方面，通过提供衬底沟槽 具有孔的外涂层。 外涂层中的孔留下去除盖层材料的分解产物的空间。 根据本发明的第二方面，从第二基板侧打开被覆盖的沟槽并且允许通过该开口去除盖层材料提供了一种解决方案。 本发明的两种方法都是基于即使在基板开口被永久覆盖之前使用临时盖层的常见思想，在移除临时盖层之前
-
公开(公告)号：US08085524B2
公开(公告)日：2011-12-27
申请号：US12092608
申请日：2006-11-02
申请人： Freddy Roozeboom , Johan H. Klootwijk , Antonius L. A. M. Kemmeren , Derk Reefman , Johannes F. C. M. Verhoeven
发明人： Freddy Roozeboom , Johan H. Klootwijk , Antonius L. A. M. Kemmeren , Derk Reefman , Johannes F. C. M. Verhoeven
IPC分类号： H01G4/228
CPC分类号： H01L28/91 , H01L27/0805 , H01L27/1087 , H01L29/945
摘要： An electronic device includes at least one trench capacitor that can also take the form of an inverse structure, a pillar capacitor. An alternating layer sequence of at least two dielectric layers and at least two electrically conductive layers is provided in the trench capacitor or on the pillar capacitor, such that the at least two electrically conductive layers are electrically isolated from each other and from the substrate by respective ones of the at least two dielectric layers. A set of internal contact pads is provided, and each internal contact pad is connected with a respective one of the electrically conductive layers or with the substrate. A range of switching opportunities is opened up that allows tuning the specific capacitance of the capacitor to a desired value.
摘要翻译： 电子设备包括至少一个也可以采取反向结构形式的沟槽电容器，立柱电容器。 至少两个电介质层和至少两个导电层的交替层序列设置在沟槽电容器或柱状电容器上，使得至少两个导电层通过相应的电气彼此电隔离并且与衬底电隔离 至少两个电介质层中的一个。 提供了一组内部接触焊盘，并且每个内部接触焊盘与相应的一个导电层或与衬底连接。 开启了一系列切换机会，可将电容器的比电容调谐到所需的值。
-
公开(公告)号：US07704881B2
公开(公告)日：2010-04-27
申请号：US12092605
申请日：2006-11-03
申请人： Johan H. Klootwijk , Antonius L. A. M. Kemmeren , Ronald Dekker , Eric Cornelis Egbertus Van Grunsven , Freddy Roozeboom
发明人： Johan H. Klootwijk , Antonius L. A. M. Kemmeren , Ronald Dekker , Eric Cornelis Egbertus Van Grunsven , Freddy Roozeboom
IPC分类号： H01L21/44
CPC分类号： H01L21/76898 , H01L21/764 , H01L23/481 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to a method for producing a substrate with at least one covered via that electrically and preferably also thermally connects a first substrate side with an opposite second substrate side. The processing involves forming a trench on a the first substrate side remains and covering the trench with a permanent layer on top of a temporary, sacrificial cap-layer, which is decomposed in a thermal process step. The method of the invention provides alternative ways to remove decomposition products of the sacrificial cap-layer material without remaining traces or contamination even in the presence of the permanent layer. This is, according to a first aspect of the invention, achieved by providing the substrate trench with an overcoat layer that has holes. The holes in the overcoat layer leave room for the removal of the decomposition products of the cap-layer material. According to the second aspect of the invention, opening the covered trench from the second substrate side and allowing the cap-layer material to be removed through that opening provides a solution. Both methods of the present invention are based on the common idea of using a temporary cap-layer even in a situation where the substrate opening is permanently covered before the removal of the temporary cap-layer.
摘要翻译： 本发明涉及一种制造具有至少一个覆盖通孔的基板的方法，所述至少一个覆盖通孔电连接并优选地将第一基板侧与相对的第二基板侧热连接。 所述处理涉及在第一基板侧上形成沟槽，并在热处理步骤中分解的临时牺牲盖层的顶部上保留并覆盖具有永久层的沟槽。 本发明的方法提供了即使在存在永久层的情况下除去牺牲帽层材料的分解产物而不留下痕迹或污染物的替代方法。 根据本发明的第一方面，这是通过为基底沟槽提供具有孔的外涂层而实现的。 外涂层中的孔留下去除盖层材料的分解产物的空间。 根据本发明的第二方面，从第二基板侧打开被覆盖的沟槽并且允许通过该开口去除盖层材料提供了一种解决方案。 本发明的两种方法都是基于即使在去除临时盖层之前基材开口被永久地覆盖的情况下使用临时盖层的常见思想。
-
-
-
搜索结果
4 条记录 (耗时 0.012 秒)
