发明申请
US20090303406A1 METHOD FOR FORMING WIRING FILM, TRANSISTOR AND ELECTRONIC DEVICE
有权
形成布线,晶体管和电子器件的方法
- 专利标题: METHOD FOR FORMING WIRING FILM, TRANSISTOR AND ELECTRONIC DEVICE
- 专利标题(中): 形成布线,晶体管和电子器件的方法
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申请号: US12475907申请日: 2009-06-01
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公开(公告)号: US20090303406A1公开(公告)日: 2009-12-10
- 发明人: Satoru Takasawa , Masaki Takei , Hirohisa Takahashi , Hiroaki Katagiri , Sadayuki Ukishima , Noriaki Tani , Satoru Ishibashi , Tadashi Masuda
- 申请人: Satoru Takasawa , Masaki Takei , Hirohisa Takahashi , Hiroaki Katagiri , Sadayuki Ukishima , Noriaki Tani , Satoru Ishibashi , Tadashi Masuda
- 申请人地址: JP Chigasaki-shi
- 专利权人: ULVAC, INC.
- 当前专利权人: ULVAC, INC.
- 当前专利权人地址: JP Chigasaki-shi
- 优先权: JP2006-354859 20061228; JP2006-354860 20061228
- 主分类号: G02F1/1343
- IPC分类号: G02F1/1343 ; C23F1/00 ; H01L29/78
摘要:
A wiring film having excellent adhesion and barrier property and a low resistance value is formed. An oxygen gas is introduced into a vacuum chamber in which an object to be film formed is disposed; a sputtering target is sputtered in a vacuum ambience containing oxygen; and a first metallic film is formed on a surface of the object to be film formed. The first sputtering target includes copper as a major component and at least one kind of additive elements selected from an additive element group consisting of Mg, Al, Si, Be, Ca, Sr, Ba, Ra, Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb and Dy. Thereafter, a second metallic film is formed on a surface of the first metallic film by sputtering the sputtering target in a state in which the introduction of the oxygen gas into a vacuum ambience is stopped, and then a wiring film is formed by etching the first and second metallic films.