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    Method for forming wiring film, transistor and electronic device
    1.
    发明授权
    Method for forming wiring film, transistor and electronic device 有权
    形成布线膜，晶体管和电子器件的方法

    公开(公告)号：US08218122B2

    公开(公告)日：2012-07-10

    申请号：US12475907

    申请日：2009-06-01

    申请人： Satoru Takasawa ,  Masaki Takei ,  Hirohisa Takahashi ,  Hiroaki Katagiri ,  Sadayuki Ukishima ,  Noriaki Tani ,  Satoru Ishibashi ,  Tadashi Masuda

    发明人： Satoru Takasawa ,  Masaki Takei ,  Hirohisa Takahashi ,  Hiroaki Katagiri ,  Sadayuki Ukishima ,  Noriaki Tani ,  Satoru Ishibashi ,  Tadashi Masuda

    IPC分类号： G02F1/13

    CPC分类号： H01L23/53238 ,  H01L21/2855 ,  H01L23/53233 ,  H01L27/124 ,  H01L2924/0002 ,  H05K1/0306 ,  H05K3/16 ,  H05K3/388 ,  H01L2924/00

    摘要： A wiring film having excellent adhesion and barrier property and a low resistance value is formed. An oxygen gas is introduced into a vacuum chamber in which an object to be film formed is disposed; a sputtering target is sputtered in a vacuum ambience containing oxygen; and a first metallic film is formed on a surface of the object to be film formed. The first sputtering target includes copper as a major component and at least one kind of additive elements selected from an additive element group consisting of Mg, Al, Si, Be, Ca, Sr, Ba, Ra, Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb and Dy. Thereafter, a second metallic film is formed on a surface of the first metallic film by sputtering the sputtering target in a state in which the introduction of the oxygen gas into a vacuum ambience is stopped, and then a wiring film is formed by etching the first and second metallic films.

    摘要翻译： 形成具有优异的粘附性和阻隔性和低电阻值的布线膜。 将氧气引入其中设置有被成膜物体的真空室中; 溅射靶在含有氧的真空环境中溅射; 并且在待成膜物体的表面上形成第一金属膜。 第一溅射靶包括铜作为主要成分，以及选自由Mg，Al，Si，Be，Ca，Sr，Ba，Ra，Sc，Y，La，Ce组成的添加元素组中的至少一种添加元素， Pr，Nd，Pm，Sm，Eu，Gd，Tb和Dy。 此后，在将氧气引入真空环境的状态下，通过溅射溅射靶溅射溅射靶，在第一金属膜的表面上形成第二金属膜，然后通过蚀刻第一金属膜形成布线膜 和第二金属膜。

    Method for producing a thin film transistor, and a thin film transistor
    5.
    发明申请
    Method for producing a thin film transistor, and a thin film transistor 有权
    薄膜晶体管的制造方法以及薄膜晶体管

    公开(公告)号：US20110233550A1

    公开(公告)日：2011-09-29

    申请号：US13064858

    申请日：2011-04-21

    申请人： Satoru Takasawa ,  Satoru Ishibashi ,  Tadashi Masuda

    发明人： Satoru Takasawa ,  Satoru Ishibashi ,  Tadashi Masuda

    IPC分类号： H01L29/786 ,  H01L21/336

    CPC分类号： H01L29/66765 ,  C23C14/0036 ,  C23C14/185 ,  C23C14/5826 ,  H01L21/2855 ,  H01L23/53233 ,  H01L27/124 ,  H01L29/458 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Provided is a metallic wiring film which is not peeled away even when exposed to a hydrogen plasma. A metallic wiring film is constituted by an adhesion layer containing copper, Ca, and oxygen and a low-resistance metal layer (a layer of a copper alloy or pure copper) having a lower resistance than the adhesion layer. When the adhesion layer is composed of a copper alloy, which contains Ca and oxygen, and a source electrode film and a drain electrode film adhering to an ohmic contact layer are constituted by the adhesion layer, even if the adhesion layer is exposed to the hydrogen plasma, a Cu-containing oxide formed at an interface between the adhesion layer and the ohmic contact layer is not reduced, so that no peeling occurs between the adhesion layer and a silicon layer.

    摘要翻译： 提供即使暴露于氢等离子体也不会剥离的金属配线膜。 金属布线膜由包含铜，Ca和氧的粘合层和具有比粘合层低的电阻的低电阻金属层（铜合金或纯铜的一层）构成。 当粘合层由含有Ca和氧的铜合金构成，并且附着在欧姆接触层上的源电极膜和漏电极膜由粘合层构成时，即使粘附层暴露于氢 等离子体，在粘合层和欧姆接触层之间的界面处形成的含Cu氧化物不会降低，使得粘附层和硅层之间不会发生剥离。

    THIN FILM TRANSISTOR AND METHOD FOR PRODUCING THIN FILM TRANSISTOR
    6.
    发明申请
    THIN FILM TRANSISTOR AND METHOD FOR PRODUCING THIN FILM TRANSISTOR 审中-公开
    薄膜晶体管及其生产薄膜晶体管的方法

    公开(公告)号：US20110068402A1

    公开(公告)日：2011-03-24

    申请号：US12881641

    申请日：2010-09-14

    申请人： Satoru Takasawa ,  Satoru Ishibashi ,  Kyuzo Nakamura ,  Tadashi Masuda

    发明人： Satoru Takasawa ,  Satoru Ishibashi ,  Kyuzo Nakamura ,  Tadashi Masuda

    IPC分类号： H01L29/786 ,  H01L21/336

    CPC分类号： H01L23/53238 ,  C23C14/0057 ,  C23C14/185 ,  H01L21/2855 ,  H01L21/76841 ,  H01L23/53233 ,  H01L27/124 ,  H01L29/458 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A metallic wiring film, which is not exfoliated even when exposed to a plasma of hydrogen, is provided. A metallic wiring film 20a is constituted by an adhesion layer 51 in which an additive metal is added to copper and a low-resistance metallic layer 52, which is made of pure copper, is disposed on the adhesion layer 51. When the additive metal made of at least one of Ti, Zr and Cr, and oxygen are included in a copper alloy which is in the adhesion layer 51 and a source electrode and a drain electrode are formed from it, copper does not precipitate at an interface between the adhesion layer 51 and the silicon layer even when being exposed to the hydrogen plasma, which prevents exfoliation from occurring between the adhesion layer 51 and the silicon layer. If the amount of additive metal increases, the adhesion layer 51 cannot be etched with an etching liquid for etching the low-resistance metallic layer 52, so that the maximum additional amount to permit the etching to be performed is the upper limit.

    摘要翻译： 提供即使暴露于氢等离子体时也不会剥离的金属布线膜。 金属布线膜20a由在铜中添加添加金属的粘合层51和由纯铜制成的低电阻金属层52设置在粘合层51上。当添加金属制成 的Ti，Zr和Cr中的至少一种，并且氧被包括在粘合层51中的铜合金中，并且源电极和漏电极由它形成，铜不会在粘合层 51和硅层，即使当暴露于氢等离子体时，其防止粘附层51和硅层之间发生剥离。 如果添加金属的量增加，则不能用用于蚀刻低电阻金属层52的蚀刻液来蚀刻粘合层51，使得允许进行蚀刻的最大附加量为上限。

    METHOD FOR PRODUCING THIN FILM TRANSISTOR AND THIN FILM TRANSISTOR
    7.
    发明申请
    METHOD FOR PRODUCING THIN FILM TRANSISTOR AND THIN FILM TRANSISTOR 有权
    生产薄膜晶体管和薄膜晶体管的方法

    公开(公告)号：US20110068338A1

    公开(公告)日：2011-03-24

    申请号：US12881652

    申请日：2010-09-14

    申请人： Satoru TAKASAWA ,  Satoru Ishibashi ,  Tadashi Masuda

    发明人： Satoru TAKASAWA ,  Satoru Ishibashi ,  Tadashi Masuda

    IPC分类号： H01L29/786 ,  H01L21/336

    CPC分类号： H01L23/53238 ,  H01L23/53233 ,  H01L27/124 ,  H01L29/458 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A metallic wiring film, which is not exfoliated even when exposed to plasma of hydrogen, is provided. A metallic wiring film is constituted by an adhesion layer in which Al is added to copper and a metallic low-resistance layer which is disposed on the adhesion layer and made of pure copper. When a copper alloy including Al and oxygen are included in the adhesion layer and a source electrode and a drain electrode are formed from it, copper does not precipitate at an interface between the adhesion layer and the silicon layer even when being exposed to the hydrogen plasma, which prevents the occurrence of exfoliation between the adhesion layer and the silicon layer. If the amount of Al increases, since widths of the adhesion layer and the metallic low-resistance layer largely differ after etching, the maximum addition amount for permitting the etching to be performed is the upper limit.

    摘要翻译： 提供即使暴露于氢等离子体时也不会剥离的金属布线膜。 金属布线膜由其中添加有Al的粘合层和设置在粘合层上并由纯铜制成的金属低电阻层构成。 当包含Al和氧的铜合金包括在粘合层中并且由其形成源电极和漏电极时，即使当暴露于氢等离子体时，铜也不会在粘附层和硅层之间的界面处析出 ，其防止粘附层和硅层之间的剥离的发生。 如果Al的量增加，由于粘合层和金属低电阻层的宽度在蚀刻之后大大不同，所以允许进行蚀刻的最大添加量是上限。

    Method for producing a thin film transistor, and a thin film transistor
    8.
    发明授权
    Method for producing a thin film transistor, and a thin film transistor 有权
    薄膜晶体管的制造方法以及薄膜晶体管

    公开(公告)号：US08470651B2

    公开(公告)日：2013-06-25

    申请号：US13064858

    申请日：2011-04-21

    申请人： Satoru Takasawa ,  Satoru Ishibashi ,  Tadashi Masuda

    发明人： Satoru Takasawa ,  Satoru Ishibashi ,  Tadashi Masuda

    IPC分类号： H01L21/84

    CPC分类号： H01L29/66765 ,  C23C14/0036 ,  C23C14/185 ,  C23C14/5826 ,  H01L21/2855 ,  H01L23/53233 ,  H01L27/124 ,  H01L29/458 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Provided is a metallic wiring film which is not peeled away even when exposed to a hydrogen plasma. A metallic wiring film is constituted by an adhesion layer containing copper, Ca, and oxygen and a low-resistance metal layer (a layer of a copper alloy or pure copper) having a lower resistance than the adhesion layer. When the adhesion layer is composed of a copper alloy, which contains Ca and oxygen, and a source electrode film and a drain electrode film adhering to an ohmic contact layer are constituted by the adhesion layer, even if the adhesion layer is exposed to the hydrogen plasma, a Cu-containing oxide formed at an interface between the adhesion layer and the ohmic contact layer is not reduced, so that no peeling occurs between the adhesion layer and a silicon layer.

    摘要翻译： 提供即使暴露于氢等离子体也不会剥离的金属配线膜。 金属布线膜由包含铜，Ca和氧的粘合层和具有比粘合层低的电阻的低电阻金属层（铜合金或纯铜的一层）构成。 当粘合层由含有Ca和氧的铜合金构成，并且附着在欧姆接触层上的源电极膜和漏电极膜由粘合层构成时，即使粘附层暴露于氢 等离子体，在粘合层和欧姆接触层之间的界面处形成的含Cu氧化物不会降低，使得粘附层和硅层之间不会发生剥离。

    Method for producing thin film transistor and thin film transistor
    9.
    发明授权
    Method for producing thin film transistor and thin film transistor 有权
    薄膜晶体管和薄膜晶体管的制造方法

    公开(公告)号：US08299529B2

    公开(公告)日：2012-10-30

    申请号：US12881652

    申请日：2010-09-14

    申请人： Satoru Takasawa ,  Satoru Ishibashi ,  Tadashi Masuda

    发明人： Satoru Takasawa ,  Satoru Ishibashi ,  Tadashi Masuda

    IPC分类号： H01L27/01 ,  H01L21/00

    CPC分类号： H01L23/53238 ,  H01L23/53233 ,  H01L27/124 ,  H01L29/458 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A metallic wiring film, which is not exfoliated even when exposed to plasma of hydrogen, is provided. A metallic wiring film is constituted by an adhesion layer in which Al is added to copper and a metallic low-resistance layer which is disposed on the adhesion layer and made of pure copper. When a copper alloy including Al and oxygen are included in the adhesion layer and a source electrode and a drain electrode are formed from it, copper does not precipitate at an interface between the adhesion layer and the silicon layer even when being exposed to the hydrogen plasma, which prevents the occurrence of exfoliation between the adhesion layer and the silicon layer. If the amount of Al increases, since widths of the adhesion layer and the metallic low-resistance layer largely differ after etching, the maximum addition amount for permitting the etching to be performed is the upper limit.

    摘要翻译： 提供即使暴露于氢等离子体时也不会剥离的金属布线膜。 金属布线膜由其中添加有Al的粘合层和设置在粘合层上并由纯铜制成的金属低电阻层构成。 当包含Al和氧的铜合金包括在粘合层中并且由其形成源电极和漏电极时，即使当暴露于氢等离子体时，铜也不会在粘附层和硅层之间的界面处析出 ，其防止粘附层和硅层之间的剥离的发生。 如果Al的量增加，由于粘合层和金属低电阻层的宽度在蚀刻之后大大不同，所以允许进行蚀刻的最大添加量是上限。

    METHOD FOR PRODUCING ELECTRONIC DEVICE, ELECTRONIC DEVICE, SEMICONDUCTOR DEVICE, AND TRANSISTOR
    10.
    发明申请
    METHOD FOR PRODUCING ELECTRONIC DEVICE, ELECTRONIC DEVICE, SEMICONDUCTOR DEVICE, AND TRANSISTOR 审中-公开
    用于制造电子器件的方法，电子器件，半导体器件和晶体管

    公开(公告)号：US20120119269A1

    公开(公告)日：2012-05-17

    申请号：US13310056

    申请日：2011-12-02

    申请人： Satoru TAKASAWA ,  Masanori Shirai ,  Satoru Ishibashi ,  Tadashi Masuda ,  Yasuo Nakadai

    发明人： Satoru TAKASAWA ,  Masanori Shirai ,  Satoru Ishibashi ,  Tadashi Masuda ,  Yasuo Nakadai

    IPC分类号： H01L29/78 ,  H01L23/48 ,  B05D5/12

    CPC分类号： H01L23/53238 ,  C22C9/00 ,  G02F2001/136295 ,  H01L27/124 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A technique is provided which prevents an increase in the resistivity of a conductive wiring film. A conductive layer containing Ca in a content rate of 0.3 atom % or more is provided on the surfaces of each of conductive wiring films which are to be exposed to a gas containing a Si atom in a chemical structure at a high temperature. When a gate insulating layer or a protection film containing Si is formed on the surface of the conductive layer, the Si atoms do not diffuse into the conductive layer and a resistance value does not increase, even if the conductive layer is exposed to the raw material gas containing Si in a chemical structure . Further, a CuCaO layer can be formed as an adhesive layer for preventing Si diffusion from a glass substrate or a silicon semiconductor.

    摘要翻译： 提供了防止导电布线膜的电阻率增加的技术。 在高温化学结构中暴露于含有Si原子的气体的导电布线膜的表面上，设置含有0.3原子％以上的Ca的导电层。 当在导电层的表面上形成栅绝缘层或含有Si的保护膜时，即使导电层暴露于原料，Si原子也不会扩散到导电层中，并且电阻值不增加 含有化学结构中的Si的气体。 此外，CuCaO层可以形成为用于防止Si从玻璃衬底或硅半导体扩散的粘合剂层。