发明申请
- 专利标题： Method for Manufacturing Light-Emitting Device
- 专利标题（中）： 制造发光装置的方法
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申请号： US12476556申请日： 2009-06-02
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公开(公告)号： US20090305445A1公开(公告)日： 2009-12-10
- 发明人: Hisao Ikeda , Takahiro Ibe
- 申请人： Hisao Ikeda , Takahiro Ibe
- 专利权人： Semiconductor Energy Laboratories, Co., Ltd.
- 当前专利权人： Semiconductor Energy Laboratories, Co., Ltd.
- 优先权： JP2008-146716 20080604
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L21/26 ; B05D3/06 ; C08J7/18
摘要：
In the present invention, a first substrate which is an evaporation donor substrate is prepared in which a material layer is formed over a patterned reflective layer. A surface of the material layer over the first substrate is irradiated with first light which satisfies one predetermined irradiation condition to pattern the material layer. A surface opposite to the surface of the first substrate is irradiated with second light which satisfies another predetermined irradiation condition to evaporate the patterned material layer onto a second substrate, which is a deposition target substrate. According to the present invention, deterioration of a material included in the material layer can be prevented and a film pattern can be formed on the second substrate with high accuracy.
公开/授权文献
- US07919340B2 Method for manufacturing light-emitting device 公开/授权日：2011-04-05
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