发明申请
- 专利标题： METHOD FOR PRODUCING A SEMICONDUCTOR LAYER
- 专利标题（中）： 生产半导体层的方法
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申请号： US12482101申请日： 2009-06-10
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公开(公告)号： US20090305486A1公开(公告)日： 2009-12-10
- 发明人: Hans-Joachim Schulze , Helmut Strack , Hans-Joerg Timme , Rainer Winkler
- 申请人： Hans-Joachim Schulze , Helmut Strack , Hans-Joerg Timme , Rainer Winkler
- 申请人地址： AT Villach
- 专利权人： INFINEON TECHNOLOGIES AUSTRIA AG
- 当前专利权人： INFINEON TECHNOLOGIES AUSTRIA AG
- 当前专利权人地址： AT Villach
- 优先权： DE102008027521.2 20080610
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
A method for producing a semiconductor layer is disclosed. One embodiment provides for a semiconductor layer on a semiconductor substrate containing oxygen. Crystal defects are produced at least in a near-surface region of the semiconductor substrate. A thermal process is carried out wherein the oxygen is taken up at the crystal defects. The semiconductor layer is deposited epitaxially over the near-surface region of the semiconductor substrate.
公开/授权文献
- US08647968B2 Method for producing a semiconductor layer 公开/授权日：2014-02-11
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