发明申请
US20090309116A1 SEMICONDUCTOR DEVICE MEMBER, PRODUCTION METHOD OF SEMICONDUCTOR-DEVICE-MEMBER FORMATION LIQUID AND SEMICONDUCTOR DEVICE MEMBER, AND SEMICONDUCTOR-DEVICE-MEMBER FORMATION LIQUID, PHOSPHOR COMPOSITION, SEMICONDUCTOR LIGHT-EMITTING DEVICE, LIGHTING SYSTEM AND IMAGE DISPLAY SYSTEM USING THE SAME 有权
半导体器件部件,半导体器件形成液体和半导体器件部件的制造方法以及半导体器件成员液体,磷光体组合物,半导体发光器件,照明系统和使用其的图像显示系统

  • 专利标题: SEMICONDUCTOR DEVICE MEMBER, PRODUCTION METHOD OF SEMICONDUCTOR-DEVICE-MEMBER FORMATION LIQUID AND SEMICONDUCTOR DEVICE MEMBER, AND SEMICONDUCTOR-DEVICE-MEMBER FORMATION LIQUID, PHOSPHOR COMPOSITION, SEMICONDUCTOR LIGHT-EMITTING DEVICE, LIGHTING SYSTEM AND IMAGE DISPLAY SYSTEM USING THE SAME
  • 专利标题(中): 半导体器件部件,半导体器件形成液体和半导体器件部件的制造方法以及半导体器件成员液体,磷光体组合物,半导体发光器件,照明系统和使用其的图像显示系统
  • 申请号: US12438283
    申请日: 2007-08-22
  • 公开(公告)号: US20090309116A1
    公开(公告)日: 2009-12-17
  • 发明人: Hanako KatoYutaka MoriHiroshi KobayashiTsubasa Tomura
  • 申请人: Hanako KatoYutaka MoriHiroshi KobayashiTsubasa Tomura
  • 申请人地址: JP Minato-ku
  • 专利权人: Mitsubishi Chemical Corporation
  • 当前专利权人: Mitsubishi Chemical Corporation
  • 当前专利权人地址: JP Minato-ku
  • 优先权: JP2006-225410 20060822
  • 国际申请: PCT/JP07/66310 WO 20070822
  • 主分类号: H01L33/00
  • IPC分类号: H01L33/00 C09K11/02
SEMICONDUCTOR DEVICE MEMBER, PRODUCTION METHOD OF SEMICONDUCTOR-DEVICE-MEMBER FORMATION LIQUID AND SEMICONDUCTOR DEVICE MEMBER, AND SEMICONDUCTOR-DEVICE-MEMBER FORMATION LIQUID, PHOSPHOR COMPOSITION, SEMICONDUCTOR LIGHT-EMITTING DEVICE, LIGHTING SYSTEM AND IMAGE DISPLAY SYSTEM USING THE SAME
摘要:
To provide a semiconductor device member that is superior in heat resistance, light resistance, film-formation capability and adhesion, and is capable of sealing a semiconductor device and holding a phosphor without causing cracks, peelings and colorings even after used for a long period of time, the weight loss at the time of heating, measured by a predetermined weight-loss at-the-time-of-heating measurement method, is 50 weight % or lower and the ratio of peeling, measured by a predetermined adhesion evaluation method, is 30% or lower, in the semiconductor device member.
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