公开(公告)号：US07859006B2

公开(公告)日：2010-12-28

申请号：US11816640

申请日：2006-02-23

申请人： Hanako Kato ,  Yutaka Mori ,  Hiroshi Kobayashi ,  Tsubasa Tomura

发明人： Hanako Kato ,  Yutaka Mori ,  Hiroshi Kobayashi ,  Tsubasa Tomura

IPC分类号： H01L33/00

CPC分类号： H01L33/56 ,  C08G77/04 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor light-emitting device member excellent in transparency, light resistance, and heat resistance and capable of sealing a semiconductor light-emitting device without causing cracks and peeling even after a long-time use is provided wherein the semiconductor light-emitting device member contains (A) in a solid Si-nuclear magnetic resonance spectrum, at least one peak selected from (a) peaks whose peak top position is in an area of a chemical shift of −40 ppm to 0 ppm inclusive, and whose full width at half maximum is 0.3 ppm to 3.0 ppm inclusive, and (b) peaks whose peak top position is in an area of the chemical shift of −80 ppm or more and less than −40 ppm, and whose full width at half maximum is 0.3 ppm to 5.0 ppm inclusive, wherein (B) silicon content is 20 weight % or more and (C) silanol content is 0.1 weight % to 10 weight % inclusive.

摘要翻译： 提供透明性，耐光性和耐热性优异的半导体发光元件，即使长时间使用也能够密封半导体发光元件而不引起裂纹和剥离的半导体发光元件，其中半导体发光元件 （A）在固体Si核磁共振谱中，至少一个峰选自（a）峰顶位置在-40ppm至0ppm的化学位移范围内的峰，并且其全宽为一半 最大值为0.3ppm〜3.0ppm，（b）峰顶位置在-80ppm以上且小于-40ppm的化学位移范围内，峰值全宽度为0.3ppm〜 5.0ppm，其中（B）硅含量为20重量％以上，（C）硅烷醇含量为0.1重量％〜10重量％。

公开(公告)号：US20110121321A1

公开(公告)日：2011-05-26

申请号：US12950128

申请日：2010-11-19

申请人： Hanako Kato ,  Yutaka Mori ,  Hiroshi Kobayashi ,  Tsubasa Tomura

发明人： Hanako Kato ,  Yutaka Mori ,  Hiroshi Kobayashi ,  Tsubasa Tomura

IPC分类号： H01L33/52

CPC分类号： H01L33/56 ,  C08G77/04 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor light-emitting device member excellent in transparency, light resistance, and heat resistance and capable of sealing a semiconductor light-emitting device without causing cracks and peeling even after a long-time use is provided wherein the semiconductor light-emitting device member contains (A) in a solid state Si-nuclear magnetic resonance spectrum, at least one peak selected from (a) peaks whose peak top position is in an area of a chemical shift of −40 ppm to 0 ppm inclusive, and whose full width at half maximum is 0.3 ppm to 3.0 ppm inclusive, and (b) peaks whose peak top position is in an area of the chemical shift of −80 ppm or more and less than −40 ppm, and whose full width at half maximum is 0.3 ppm to 5.0 ppm inclusive, wherein (B) silicon content is 20 weight % or more and (C) silanol content is 0.1 weight % to 10 weight % inclusive.

摘要翻译： 提供透明性，耐光性和耐热性优异的半导体发光元件，即使长时间使用也能够密封半导体发光元件而不引起裂纹和剥离的半导体发光元件，其中半导体发光元件 （A）为固态Si核磁共振谱，选自（a）峰顶位于-40ppm〜0ppm的化学位移范围内的峰的至少一个峰，其全宽度 半峰值为0.3ppm〜3.0ppm，（b）峰顶位置在-80ppm以上且小于-40ppm的化学位移范围内，峰值全差为0.3ppm的峰 至5.0ppm，其中（B）硅含量为20重量％以上，（C）硅烷醇含量为0.1重量％〜10重量％。

公开(公告)号：US07928457B2

公开(公告)日：2011-04-19

申请号：US12067859

申请日：2006-09-22

申请人： Hanako Kato ,  Yutaka Mori ,  Hiroshi Kobayashi ,  Tsubasa Tomura ,  Masanori Yamazaki ,  Mari Abe

发明人： Hanako Kato ,  Yutaka Mori ,  Hiroshi Kobayashi ,  Tsubasa Tomura ,  Masanori Yamazaki ,  Mari Abe

IPC分类号： H01L29/10

CPC分类号： C09D183/04 ,  H01L24/45 ,  H01L33/56 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01021 ,  H01L2924/01046 ,  H01L2924/01057 ,  H01L2924/01063 ,  H01L2924/01066 ,  H01L2924/01067 ,  H01L2924/01068 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/0401

摘要： To provide novel semiconductor light-emitting device member superior in transparency, light resistance, and heat resistance and capable of sealing semiconductor light-emitting device and holding phosphor without generating cracks or peelings even after use for a long time, the member meets the following requirements: (1) comprising functional group forming hydrogen bond with hydroxyl group or oxygen in a metalloxane bond, on the surface of ceramic or metal, (2) maintenance rate of transmittance at 400 nm wavelength before and after left at 200° C. for 500 hours is between 80% to 110%, (3) no change is observed by visual inspection after irradiated with light having 380 nm to 500 nm wavelength, whose center wavelength is between 400 nm and 450 nm both inclusive, for 24 hours with 4500 W/m2 illumination intensity at 436 nm wavelength, and (4) refractive index at 550 nm wavelength is 1.45 or larger.

摘要翻译： 为了提供透明性，耐光性和耐热性优异的新颖的半导体发光元件部件，即使长时间使用，也能够密封半导体发光元件和保持荧光体而不产生裂纹或剥离，该元件满足以下要求 （1）在陶瓷或金属的表面上包含在金属氧化物键中与羟基或氧形成氢键的官能团，（2）在200℃下在400nm波长前后的透射率维持率为500 小时在80％至110％之间，（3）通过目视检查，在380nm至500nm波长的光线照射后，其中心波长在400nm和450nm之间（包括端值）在24小时内不会发生变化，具有4500W / m2的照射强度，以及（4）550nm波长的折射率为1.45以上。

公开(公告)号：US20090045422A1

公开(公告)日：2009-02-19

申请号：US12067859

申请日：2006-09-22

申请人： Hanako Kato ,  Yutaka Mori ,  Hiroshi Kobayashi ,  Tsubasa Tomura ,  Masanori Yamazaki ,  Mari Abe

发明人： Hanako Kato ,  Yutaka Mori ,  Hiroshi Kobayashi ,  Tsubasa Tomura ,  Masanori Yamazaki ,  Mari Abe

IPC分类号： H01L33/00

CPC分类号： C09D183/04 ,  H01L24/45 ,  H01L33/56 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01021 ,  H01L2924/01046 ,  H01L2924/01057 ,  H01L2924/01063 ,  H01L2924/01066 ,  H01L2924/01067 ,  H01L2924/01068 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/0401

摘要： To provide novel semiconductor light-emitting device member superior in transparency, light resistance, and heat resistance and capable of sealing semiconductor light-emitting device and holding phosphor without generating cracks or peelings even after use for a long time, the member meets the following requirements: (1) comprising functional group forming hydrogen bond with hydroxyl group or oxygen in a metalloxane bond, on the surface of ceramic or metal, (2) maintenance rate of transmittance at 400 nm wavelength before and after left at 200° C. for 500 hours is between 80% to 110%, (3) no change is observed by visual inspection after irradiated with light having 380 nm to 500 nm wavelength, whose center wavelength is between 400 nm and 450 nm both inclusive, for 24 hours with 4500 W/m2 illumination intensity at 436 nm wavelength, and (4) refractive index at 550 nm wavelength is 1.45 or larger.

摘要翻译： 为了提供透明性，耐光性和耐热性优异的新颖的半导体发光元件部件，即使长时间使用，也能够密封半导体发光元件和保持荧光体而不产生裂纹或剥离，该元件满足以下要求 （1）在陶瓷或金属的表面上包含在金属氧化物键中与羟基或氧形成氢键的官能团，（2）在200℃下在400nm波长前后的透射率维持率为500 小时在80％至110％之间，（3）通过目视检查，在380nm至500nm波长的光线照射后，其中心波长在400nm和450nm之间（包括端值）在24小时内不会发生变化，具有4500W / m2的照射强度，以及（4）550nm波长的折射率为1.45以上。

公开(公告)号：US20090008673A1

公开(公告)日：2009-01-08

申请号：US11816640

申请日：2006-02-23

申请人： Hanako Kato ,  Yutaka Mori ,  Hiroshi Kobayashi ,  Tsubasa Tomura

发明人： Hanako Kato ,  Yutaka Mori ,  Hiroshi Kobayashi ,  Tsubasa Tomura

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/56 ,  C08G77/04 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor light-emitting device member excellent in transparency, light resistance, and heat resistance and capable of sealing a semiconductor light-emitting device without causing cracks and peeling even after a long-time use is provided. Therefore, a semiconductor light-emitting device member that comprises (1) in a solid Si-nuclear magnetic resonance spectrum, at least one peak selected from a group consisting of (i) peaks whose peak top position is in an area of a chemical shift of −40 ppm to 0 ppm inclusive, and whose full width at half maximum is 0.3 ppm to 3.0 ppm inclusive, and (ii) peaks whose peak top position is in an area of the chemical shift of −80 ppm or more and less than −40 ppm, and whose full width at half maximum is 0.3 ppm to 5.0 ppm inclusive, wherein (2) silicon content is 20 weight % or more and (3) silanol content is 0.1 weight % to 10 weight % inclusive is used.

摘要翻译： 提供透明性，耐光性和耐热性优异且能够密封半导体发光元件的半导体发光元件，即使在长时间使用后也不会产生裂纹和剥离。 因此，包括（1）固体Si核磁共振光谱的至少一个峰值选自（i）峰顶位于化学位移的区域中的峰值的半导体发光器件部件 为-40ppm〜0ppm，其全宽为0.3ppm〜3.0ppm，峰值位置为-80ppm以上且峰值以上的峰值 -40ppm，其全宽度为0.3ppm〜5.0ppm，其中（2）硅含量为20重量％以上，（3）硅烷醇含量为0.1重量％〜10重量％。

公开(公告)号：US08759840B2

公开(公告)日：2014-06-24

申请号：US12950128

申请日：2010-11-19

申请人： Hanako Kato ,  Yutaka Mori ,  Hiroshi Kobayashi ,  Tsubasa Tomura

发明人： Hanako Kato ,  Yutaka Mori ,  Hiroshi Kobayashi ,  Tsubasa Tomura

IPC分类号： H01L27/15

CPC分类号： H01L33/56 ,  C08G77/04 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor light-emitting device member excellent in transparency, light resistance, and heat resistance and capable of sealing a semiconductor light-emitting device without causing cracks and peeling even after a long-time use is provided wherein the semiconductor light-emitting device member contains (A) in a solid state Si-nuclear magnetic resonance spectrum, at least one peak selected from (a) peaks whose peak top position is in an area of a chemical shift of −40 ppm to 0 ppm inclusive, and whose full width at half maximum is 0.3 ppm to 3.0 ppm inclusive, and (b) peaks whose peak top position is in an area of the chemical shift of −80 ppm or more and less than −40 ppm, and whose full width at half maximum is 0.3 ppm to 5.0 ppm inclusive, wherein (B) silicon content is 20 weight % or more and (C) silanol content is 0.1 weight % to 10 weight % inclusive.

摘要翻译： 提供透明性，耐光性和耐热性优异的半导体发光元件，即使长时间使用也能够密封半导体发光元件而不引起裂纹和剥离的半导体发光元件，其中半导体发光元件 （A）为固态Si核磁共振谱，选自（a）峰顶位于-40ppm〜0ppm的化学位移范围内的峰的至少一个峰，其全宽度 半峰值为0.3ppm〜3.0ppm，（b）峰顶位置在-80ppm以上且小于-40ppm的化学位移范围内，峰值全差为0.3ppm的峰 至5.0ppm，其中（B）硅含量为20重量％以上，（C）硅烷醇含量为0.1重量％〜10重量％。

公开(公告)号：US08502364B2

公开(公告)日：2013-08-06

申请号：US12438283

申请日：2007-08-22

申请人： Hanako Kato ,  Yutaka Mori ,  Hiroshi Kobayashi ,  Tsubasa Tomura

发明人： Hanako Kato ,  Yutaka Mori ,  Hiroshi Kobayashi ,  Tsubasa Tomura

IPC分类号： H01L35/24 ,  H01L31/0312 ,  H01L23/58 ,  H01L23/02 ,  H01L51/00

CPC分类号： C09K11/7774 ,  C09K11/7721 ,  C09K11/7734 ,  C09K11/7735 ,  C09K11/7738 ,  C09K11/774 ,  C09K11/7775 ,  C09K11/7781 ,  C09K11/7789 ,  C09K11/7794 ,  C09K11/7795 ,  H01L23/24 ,  H01L23/293 ,  H01L24/17 ,  H01L33/507 ,  H01L33/54 ,  H01L33/58 ,  H01L2224/32245 ,  H01L2224/32257 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/01004 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01021 ,  H01L2924/01025 ,  H01L2924/01046 ,  H01L2924/01057 ,  H01L2924/01063 ,  H01L2924/01066 ,  H01L2924/01067 ,  H01L2924/01068 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： To provide a semiconductor device member that is superior in heat resistance, light resistance, film-formation capability and adhesion, and is capable of sealing a semiconductor device and holding a phosphor without causing cracks, peelings and colorings even after used for a long period of time, the weight loss at the time of heating, measured by a predetermined weight-loss at-the-time-of-heating measurement method, is 50 weight % or lower and the ratio of peeling, measured by a predetermined adhesion evaluation method, is 30% or lower, in the semiconductor device member.

摘要翻译： 为了提供耐热性，耐光性，成膜性和粘合性优异的半导体器件部件，并且即使在长时间使用之后也能够密封半导体器件和保持荧光体而不引起裂纹，剥离和着色 时间，通过预定的加热温度测量方法的重量损失测量的加热时的重量损失为50重量％以下，通过预定的粘合性评价方法测定的剥离比例， 在半导体器件部件中为30％以下。

公开(公告)号：US20090309116A1

公开(公告)日：2009-12-17

申请号：US12438283

申请日：2007-08-22

申请人： Hanako Kato ,  Yutaka Mori ,  Hiroshi Kobayashi ,  Tsubasa Tomura

发明人： Hanako Kato ,  Yutaka Mori ,  Hiroshi Kobayashi ,  Tsubasa Tomura

IPC分类号： H01L33/00 ,  C09K11/02

CPC分类号： C09K11/7774 ,  C09K11/7721 ,  C09K11/7734 ,  C09K11/7735 ,  C09K11/7738 ,  C09K11/774 ,  C09K11/7775 ,  C09K11/7781 ,  C09K11/7789 ,  C09K11/7794 ,  C09K11/7795 ,  H01L23/24 ,  H01L23/293 ,  H01L24/17 ,  H01L33/507 ,  H01L33/54 ,  H01L33/58 ,  H01L2224/32245 ,  H01L2224/32257 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/01004 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01021 ,  H01L2924/01025 ,  H01L2924/01046 ,  H01L2924/01057 ,  H01L2924/01063 ,  H01L2924/01066 ,  H01L2924/01067 ,  H01L2924/01068 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： To provide a semiconductor device member that is superior in heat resistance, light resistance, film-formation capability and adhesion, and is capable of sealing a semiconductor device and holding a phosphor without causing cracks, peelings and colorings even after used for a long period of time, the weight loss at the time of heating, measured by a predetermined weight-loss at-the-time-of-heating measurement method, is 50 weight % or lower and the ratio of peeling, measured by a predetermined adhesion evaluation method, is 30% or lower, in the semiconductor device member.

摘要翻译： 为了提供耐热性，耐光性，成膜性和粘合性优异的半导体器件部件，并且即使在长时间使用之后也能够密封半导体器件和保持荧光体而不引起裂纹，剥离和着色 时间，通过预定的加热温度测量方法的重量损失测量的加热时的重量损失为50重量％以下，通过预定的粘合性评价方法测定的剥离比例， 在半导体器件部件中为30％以下。