发明申请
- 专利标题： METHOD FOR FORMING SELF-ALIGNED METAL SILICIDE CONTACTS
- 专利标题（中）： 形成自对准金属硅化物接触的方法
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申请号： US12539660申请日： 2009-08-12
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公开(公告)号： US20090309228A1公开(公告)日： 2009-12-17
- 发明人: Sunfei Fang , Randolph F. Knarr , Mahadevaiyer Krishnan , Christian Lavoie , Renee T. Mo , Balasubramanian Pranatharthiharan , Jay W. Strane
- 申请人： Sunfei Fang , Randolph F. Knarr , Mahadevaiyer Krishnan , Christian Lavoie , Renee T. Mo , Balasubramanian Pranatharthiharan , Jay W. Strane
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L23/532
- IPC分类号： H01L23/532 ; H01L21/306
摘要：
The present invention relates to a method for forming self-aligned metal silicide contacts over at least two silicon-containing semiconductor regions that are spaced apart from each other by an exposed dielectric region. Preferably, each of the self-aligned metal silicide contacts so formed comprises at least nickel silicide and platinum silicide with a substantially smooth surface, and the exposed dielectric region is essentially free of metal and metal silicide. More preferably, the method comprises the steps of nickel or nickel alloy deposition, low-temperature annealing, nickel etching, high-temperature annealing, and aqua regia etching.
公开/授权文献
- US08039382B2 Method for forming self-aligned metal silicide contacts 公开/授权日：2011-10-18
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