发明申请
US20090309625A1 ELECTRONIC CIRCUIT FOR MEASUREMENT OF TRANSISTOR VARIABILITY AND THE LIKE
有权
用于测量晶体管可变性和类似物的电子电路
- 专利标题: ELECTRONIC CIRCUIT FOR MEASUREMENT OF TRANSISTOR VARIABILITY AND THE LIKE
- 专利标题(中): 用于测量晶体管可变性和类似物的电子电路
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申请号: US12542184申请日: 2009-08-17
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公开(公告)号: US20090309625A1公开(公告)日: 2009-12-17
- 发明人: Keith A. Jenkins , Jae-Joon Kim , Rahul M. Rao
- 申请人: Keith A. Jenkins , Jae-Joon Kim , Rahul M. Rao
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 主分类号: G01R31/26
- IPC分类号: G01R31/26
摘要:
An electronic circuit includes an output terminal and at least a first measuring FET. The second drain-source terminals of a plurality of FETS to be tested are interconnected with the first drain-source terminal of the first measuring FET and the output terminal. The second drain-source terminal of the first measuring FET is interconnected with a first biasing terminal. The first drain-source terminals of the FETS to be tested are interconnected with a second biasing terminal. A state machine is coupled to the gates of the FETS to be tested and the gate of the first measuring FET. The state machine is configured to energize the gate of the first measuring FET and to sequentially energize the gates of the FETS to be tested, so that an output voltage appears on the output terminal. Circuitry to compare the output voltage to a reference value is also provided. The gate of the first measuring field effect transistor is energized; the gates of the field effect transistors to be tested are sequentially energized, whereby an output voltage appears on the output terminal; and the output voltage is compared to the reference value.