发明申请
US20090311835A1 NANOWIRE MOSFET WITH DOPED EPITAXIAL CONTACTS FOR SOURCE AND DRAIN
有权
NONOWIRE MOSFET，具有用于源和漏极的外延接头
- 专利标题： NANOWIRE MOSFET WITH DOPED EPITAXIAL CONTACTS FOR SOURCE AND DRAIN
- 专利标题（中）： NONOWIRE MOSFET，具有用于源和漏极的外延接头
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申请号： US12541371申请日： 2009-08-14
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公开(公告)号： US20090311835A1公开(公告)日： 2009-12-17
- 发明人: Jack O. Chu , Guy M. Cohen , John A. Ott , Michael J. Rooks , Paul M. Solomon
- 申请人： Jack O. Chu , Guy M. Cohen , John A. Ott , Michael J. Rooks , Paul M. Solomon
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/768
摘要：
A FET structure with a nanowire forming the FET channel, and doped source and drain regions formed by radial epitaxy from the nanowire body is disclosed. A top gated and a bottom gated nanowire FET structures are discussed. The source and drain fabrication can use either selective or non-selective epitaxy.
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