发明申请
- 专利标题： Method for Forming Isolation Structures
- 专利标题（中）： 形成隔离结构的方法
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申请号： US12552352申请日： 2009-09-02
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公开(公告)号： US20090317957A1公开(公告)日： 2009-12-24
- 发明人: Roland Hampp , Alois Gutmann , Jin-Ping Han , O Sung Kwon
- 申请人： Roland Hampp , Alois Gutmann , Jin-Ping Han , O Sung Kwon
- 主分类号： H01L21/762
- IPC分类号： H01L21/762 ; H01L21/336
摘要：
A trench is formed in the surface of a provided semiconductor body. An oxide is deposited in the trench and a cap is deposited on the oxide, wherein the combination of the cap and the oxide impart a mechanical stress on the semiconductor body.
公开/授权文献
- US07795107B2 Method for forming isolation structures 公开/授权日：2010-09-14
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