发明申请
- 专利标题： METHOD OF RECYCLING AN EPITAXIED DONOR WAFER
- 专利标题（中）： 回收离子沉淀法的方法
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申请号： US12503537申请日： 2009-07-15
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公开(公告)号： US20090325362A1公开(公告)日： 2009-12-31
- 发明人: Nabil Chhaimi , Eric Guiot , Patrick Reynaud , Bruno Ghyselen , Cécile Aulnette , Bénédicte Osternaud , Takeshi Akatsu , Bruce Faure
- 申请人： Nabil Chhaimi , Eric Guiot , Patrick Reynaud , Bruno Ghyselen , Cécile Aulnette , Bénédicte Osternaud , Takeshi Akatsu , Bruce Faure
- 优先权： FR0300098 20030107; FR0510596 20051018
- 主分类号： H01L21/762
- IPC分类号： H01L21/762
摘要：
A method for forming a semiconductor structure that includes a thin layer of semiconductor material on a receiver wafer is disclosed. The method includes removing a thickness of material from a donor wafer, which comprises a support substrate and an epitaxial layer, for surface preparation and transferring a portion of the epitaxial layer from the donor wafer to the receiver wafer. The thickness removed during the surface preparation is adapted to enable formation of a new semiconductor structure from the remaining epitaxial portion of the donor wafer.
公开/授权文献
- US2148568A Road working machine 公开/授权日：1939-02-28