公开(公告)号：US20090325362A1

公开(公告)日：2009-12-31

申请号：US12503537

申请日：2009-07-15

申请人： Nabil Chhaimi ,  Eric Guiot ,  Patrick Reynaud ,  Bruno Ghyselen ,  Cécile Aulnette ,  Bénédicte Osternaud ,  Takeshi Akatsu ,  Bruce Faure

发明人： Nabil Chhaimi ,  Eric Guiot ,  Patrick Reynaud ,  Bruno Ghyselen ,  Cécile Aulnette ,  Bénédicte Osternaud ,  Takeshi Akatsu ,  Bruce Faure

IPC分类号： H01L21/762

CPC分类号： H01L21/76254 ,  H01L21/02032

摘要： A method for forming a semiconductor structure that includes a thin layer of semiconductor material on a receiver wafer is disclosed. The method includes removing a thickness of material from a donor wafer, which comprises a support substrate and an epitaxial layer, for surface preparation and transferring a portion of the epitaxial layer from the donor wafer to the receiver wafer. The thickness removed during the surface preparation is adapted to enable formation of a new semiconductor structure from the remaining epitaxial portion of the donor wafer.

摘要翻译： 公开了一种在接收器晶片上形成半导体材料薄层的半导体结构的方法。 该方法包括从施主晶片去除材料的厚度，其包括支撑衬底和外延层，用于表面制备并将外延层的一部分从施主晶片转移到接收器晶片。 在表面处理期间去除的厚度适于能够从施主晶片的剩余外延部分形成新的半导体结构。

公开(公告)号：US20100167500A1

公开(公告)日：2010-07-01

申请号：US12718804

申请日：2010-03-05

申请人： Nabil Chhaimi ,  Eric Guiot ,  Patrick Reynaud ,  Bruno Ghyselen ,  Cécile Aulnette ,  Bénédite Osternaud ,  Takeshi Akatsu ,  Yves-Matthieu Le Vaillant

发明人： Nabil Chhaimi ,  Eric Guiot ,  Patrick Reynaud ,  Bruno Ghyselen ,  Cécile Aulnette ,  Bénédite Osternaud ,  Takeshi Akatsu ,  Yves-Matthieu Le Vaillant

IPC分类号： H01L21/78

CPC分类号： H01L21/76254 ,  H01L21/02032

摘要： A method for forming a semiconductor structure that includes a thin layer of semiconductor material on a receiver wafer is disclosed. The method includes removing a thickness of material from a donor wafer, which comprises a support substrate and an epitaxial layer, for surface preparation and transferring a portion of the epitaxial layer from the donor wafer to the receiver wafer. The thickness removed during the surface preparation is adapted to enable formation of a new semiconductor structure from the remaining epitaxial portion of the donor wafer.

摘要翻译： 公开了一种在接收器晶片上形成半导体材料薄层的半导体结构的方法。 该方法包括从施主晶片去除材料的厚度，其包括支撑衬底和外延层，用于表面制备并将外延层的一部分从施主晶片转移到接收器晶片。 在表面处理期间去除的厚度适于能够从施主晶片的剩余外延部分形成新的半导体结构。

公开(公告)号：US20070087526A1

公开(公告)日：2007-04-19

申请号：US11386967

申请日：2006-03-21

申请人： Nabil Chhaimi ,  Eric Guiot ,  Patrick Reynaud

发明人： Nabil Chhaimi ,  Eric Guiot ,  Patrick Reynaud

IPC分类号： H01L21/30

CPC分类号： H01L21/02032 ,  H01L21/76254

摘要： A method for forming a semiconductor structure comprising a thin layer of semiconductor material on a receiver wafer is disclosed. The method comprises removing a thickness of material from a donor wafer, which comprises a support substrate and an epitaxial layer, for surface preparation and transferring a portion of the epitaxial layer from the donor wafer to the receiver wafer. The thickness removed during the surface preparation is adapted to enable formation of a new semiconductor structure from the remaining epitaxial portion of the donor wafer.

摘要翻译： 公开了一种在接收器晶片上形成半导体材料薄层的方法。 该方法包括从施主晶片去除厚度的材料，其包括支撑衬底和外延层，用于表面制备并将外延层的一部分从施主晶片转移到接收器晶片。 在表面处理期间去除的厚度适于能够从施主晶片的剩余外延部分形成新的半导体结构。

公开(公告)号：US07217639B2

公开(公告)日：2007-05-15

申请号：US11004408

申请日：2004-12-03

申请人： Thibaut Maurice ,  Eric Guiot

发明人： Thibaut Maurice ,  Eric Guiot

IPC分类号： H01L21/46 ,  H01L21/30

CPC分类号： H01L21/76254 ,  H01L22/12

摘要： The invention relates to a method for manufacturing a material compound wafer by forming a predetermined splitting area in a source substrate; attaching the source substrate to a handle substrate to form an assembly; heating the assembly for weakening the predetermined splitting area; and determining a degree of weakening of the predetermined splitting area which evidences the physical strength of the predetermined splitting area during or after heating to detect anomalies that may lead to damage of the source substrate, handle or assembly. The degree of weakening is advantageously determined in-situ and may be determined continuously or periodically during the heating. The invention further relates to an apparatus for thermal annealing device used in the manufacturing process of a material compound wafer. This apparatus generally includes a device for thermally annealing the assembly described above; and a device for determining the degree of weakening of the predetermined splitting area during or after thermal annealing to detect anomalies that may lead to damage of the source substrate, handle or assembly.

摘要翻译： 本发明涉及一种通过在源极基板中形成预定的分裂区域来制造材料复合晶片的方法; 将源底板附接到手柄基板以形成组件; 加热组件以削弱预定的分割区域; 并且确定预定分离区域的弱化程度，其证明加热期间或之后预定分离区域的物理强度，以检测可能导致源底物，手柄或组件损坏的异常。 弱化程度有利地就地确定，并且可以在加热期间连续地或周期性地确定。 本发明还涉及用于材料复合晶片的制造过程中的热退火装置。 该装置通常包括用于对上述组件进行热退火的装置; 以及用于在热退火期间或之后确定预定分裂区域的弱化程度的装置，以检测可能导致源基板，手柄或组件损坏的异常。

公开(公告)号：US20050277269A1

公开(公告)日：2005-12-15

申请号：US11004408

申请日：2004-12-03

申请人： Thibaut Maurice ,  Eric Guiot

发明人： Thibaut Maurice ,  Eric Guiot

IPC分类号： H01L21/66 ,  H01L21/762 ,  H01L21/46

CPC分类号： H01L21/76254 ,  H01L22/12

摘要： The invention relates to a method for manufacturing a material compound wafer by forming a predetermined splitting area in a source substrate; attaching the source substrate to a handle substrate to form an assembly; heating the assembly for weakening the predetermined splitting area; and determining a degree of weakening of the predetermined splitting area which evidences the physical strength of the predetermined splitting area during or after heating to detect anomalies that may lead to damage of the source substrate, handle or assembly. The degree of weakening is advantageously determined in-situ and may be determined continuously or periodically during the heating. The invention further relates to an apparatus for thermal annealing device used in the manufacturing process of a material compound wafer. This apparatus generally includes a device for thermally annealing the assembly described above; and a device for determining the degree of weakening of the predetermined splitting area during or after thermal annealing to detect anomalies that may lead to damage of the source substrate, handle or assembly.

摘要翻译： 本发明涉及一种通过在源极基板中形成预定的分裂区域来制造材料复合晶片的方法; 将源底板附接到手柄基板以形成组件; 加热组件以削弱预定的分割区域; 并且确定预定分离区域的弱化程度，其证明加热期间或之后预定分离区域的物理强度，以检测可能导致源底物，手柄或组件损坏的异常。 弱化程度有利地就地确定，并且可以在加热期间连续地或周期性地确定。 本发明还涉及用于材料复合晶片的制造过程中的热退火装置。 该装置通常包括用于对上述组件进行热退火的装置; 以及用于在热退火期间或之后确定预定分裂区域的弱化程度的装置，以检测可能导致源基板，手柄或组件损坏的异常。

公开(公告)号：US20110275226A1

公开(公告)日：2011-11-10

申请号：US13145313

申请日：2009-12-30

申请人： Didier Landru ,  Fabrice Gritti ,  Eric Guiot ,  Oleg Kononchuk ,  Christelle Veytizou

发明人： Didier Landru ,  Fabrice Gritti ,  Eric Guiot ,  Oleg Kononchuk ,  Christelle Veytizou

IPC分类号： H01L21/31

CPC分类号： H01L21/3247 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/31662 ,  H01L21/7624

摘要： The invention concerns a process to treat a structure of semiconductor-on-insulator type structure of a carrier substrate, an oxide layer and a thin layer of a semiconductor material, wherein the structure having a peripheral ring in which the oxide layer is exposed, and the process includes the application of a main thermal treatment in a neutral or controlled reducing atmosphere. The method includes a step to cover at least an exposed peripheral part of the oxide layer, prior to the main thermal treatment, this latter treatment being conducted under controlled time and temperature conditions so as to urge at least part of the oxygen in the oxide layer to diffuse through the thin semiconductor layer, leading to controlled reduction of the thickness of the oxide layer.

摘要翻译： 本发明涉及一种处理载体衬底，氧化物层和半导体材料薄层的绝缘体上半导体结构的结构的方法，其中具有暴露氧化物层的外围环的结构和 该方法包括在中性或受控还原气氛中应用主要热处理。 该方法包括在主要热处理之前至少覆盖氧化物层的暴露的周边部分的步骤，该后处理在受控的时间和温度条件下进行，以便促使氧化物层中的至少一部分氧 通过薄的半导体层扩散，导致氧化物层的厚度受到控制的减小。

公开(公告)号：US20050277267A1

公开(公告)日：2005-12-15

申请号：US10984913

申请日：2004-11-09

申请人： Thibaut Maurice ,  Phuong Nguyen ,  Eric Guiot

发明人： Thibaut Maurice ,  Phuong Nguyen ,  Eric Guiot

IPC分类号： H01L27/12 ,  H01L21/02 ,  H01L21/30 ,  H01L21/46 ,  H01L21/762 ,  H01L29/76

CPC分类号： H01L21/76254

摘要： The invention relates to a method for manufacturing a compound material wafer. The technique includes forming a weakened zone in a source substrate, attaching the source substrate to a handle substrate to form a source-handle assembly, and thermally annealing the source-handle assembly to further weaken the weakened zone. The method also includes holding the assembly at a holding temperature, and detaching the source substrate from the assembly at the weakened zone at the holding temperature. The holding temperature is greater than room temperature but does not promote further weakening of the weakened zone.

摘要翻译： 本发明涉及一种复合材料晶片的制造方法。 该技术包括在源极基底中形成弱化区域，将源极基底附接到手柄基底以形成源极 - 手柄组件，以及对源极 -​​ 手柄组件进行热退火以进一步削弱弱化区域。 该方法还包括将组件保持在保持温度，并且在保持温度下将源基板从弱化区域处的组件分离。 保温温度大于室温，但不会促进弱化区的进一步弱化。

公开(公告)号：US08324072B2

公开(公告)日：2012-12-04

申请号：US13062996

申请日：2009-09-21

申请人： Christelle Veytizou ,  Fabrice Gritti ,  Eric Guiot ,  Oleg Kononchuk ,  Didier Landru

发明人： Christelle Veytizou ,  Fabrice Gritti ,  Eric Guiot ,  Oleg Kononchuk ,  Didier Landru

IPC分类号： H01L21/76

CPC分类号： H01L21/76254 ,  H01L21/76256 ,  H01L2224/05124 ,  H01L2924/00014

摘要： A process for treating a semiconductor-on-insulator type structure that includes, successively, a support substrate, an oxide layer and a thin semiconductor layer. The process includes formation of a silicon nitride or silicon oxynitride mask on the thin semiconductor layer to define exposed areas at the surface of the layer which are not covered by the mask, and which are arranged in a desired pattern; and application of a heat treatment in a neutral or controlled reducing atmosphere and under controlled conditions of temperature and time to induce at least a portion of the oxygen of the oxide layer to diffuse through the thin semiconductor layer, thereby resulting in the controlled reduction in the oxide thickness in the areas of the oxide layer corresponding to the desired pattern. The mask is formed so as to be at least partially buried in the thickness of the thin semiconductor layer.

摘要翻译： 一种用于处理绝缘体上半导体型结构的方法，其依次包括支撑衬底，氧化物层和薄的半导体层。 该方法包括在薄半导体层上形成氮化硅或氮氧化硅掩模，以在层的表面上限定未被掩模覆盖并且以所需图案排列的暴露区域; 以及在中性或受控的还原气氛中和在受温度和时间的受控条件下进行热处理以诱导氧化物层的氧的至少一部分扩散通过薄的半导体层，由此导致可控的减少 对应于所需图案的氧化物层的区域中的氧化物厚度。 掩模形成为至少部分地埋在薄半导体层的厚度中。

公开(公告)号：US20110183493A1

公开(公告)日：2011-07-28

申请号：US12937920

申请日：2009-06-12

申请人： Nicolas Daval ,  Oleg Kononchuk ,  Eric Guiot ,  Cecile Aulnette ,  Fabrice Lallement ,  Christophe Figuet ,  Didier Landru

发明人： Nicolas Daval ,  Oleg Kononchuk ,  Eric Guiot ,  Cecile Aulnette ,  Fabrice Lallement ,  Christophe Figuet ,  Didier Landru

IPC分类号： H01L21/762

CPC分类号： H01L21/76254 ,  H01L21/2007 ,  H01L21/76256

摘要： The present invention relates to a process for manufacturing a structure comprising a germanium layer (3) on a support substrate (1), characterised in that it comprises the following steps: (a) formation of an intermediate structure (10) comprising said support substrate (1), a silicon oxide layer (20) and said germanium layer (3), the silicon oxide layer (20) being in direct contact with the germanium layer (3), (b) application to said intermediate structure (10) of a heat treatment, in a neutral or reducing atmosphere, at a defined temperature and for a defined time, to diffuse at least part of the oxygen from the silicon oxide layer (20) through the germanium layer (3).

摘要翻译： 本发明涉及一种用于制造包括在支撑衬底（1）上的锗层（3）的结构的方法，其特征在于包括以下步骤：（a）形成包含所述支撑衬底的中间结构（10） （1），氧化硅层（20）和所述锗层（3），氧化硅层（20）与锗层（3）直接接触，（b）施​​加到所述中间结构（10） 在中性或还原性气氛中，在限定的温度下和在一定时间内进行热处理，以使至少部分氧从氧化硅层（20）扩散通过锗层（3）。

公开(公告)号：US20100096733A1

公开(公告)日：2010-04-22

申请号：US12524104

申请日：2008-02-12

申请人： Eric Guiot ,  Fabrice Lallement

发明人： Eric Guiot ,  Fabrice Lallement

IPC分类号： H01L29/06 ,  H01L21/30

CPC分类号： H01L21/76254

摘要： A process for fabricating a substrate that includes a buried oxide layer for the production of electronic components or the like. The process includes depositing an oxide layer or a nitride layer on either of a donor or receiver substrate, and bringing the donor and receiver substrates into contact; conducting at least a first heat treatment of the oxide or nitride layer before bonding the substrates, and conducting a second heat treatment of the fabricated substrate of the receiver substrate, the oxide layer and all or part of the donor substrate at a temperature equal to or higher than the temperature applied in the first heat treatment. Substrates that have an oxide or nitride layer deposited thereon wherein the oxide or nitride layer is degassed and has a refractive index smaller than the refractive index of an oxide or nitride layer of the same composition formed by thermal growth.

摘要翻译： 一种制造基板的方法，该基板包括用于制造电子部件等的掩埋氧化物层。 该方法包括在供体或接收器基底中的任一个上沉积氧化物层或氮化物层，并使供体和接收器基板接触; 在接合衬底之前对氧化物或氮化物层进行至少第一次热处理，并且在等于或等于或等于的温度下对接收衬底，氧化物层和所有或部分施主衬底的制造衬底进行第二次热处理， 高于在第一热处理中施加的温度。 在其上沉积有氧化物或氮化物层的衬底，其中氧化物或氮化物层被脱气并且具有小于通过热生长形成的相同组成的氧化物或氮化物层的折射率的折射率。