发明申请
- 专利标题： METHOD FOR MANUFACTURING SOI SUBSTRATE
- 专利标题（中）： 制造SOI衬底的方法
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申请号： US12489594申请日： 2009-06-23
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公开(公告)号： US20090325363A1公开(公告)日： 2009-12-31
- 发明人: Hideto OHNUMA , Kenichiro MAKINO , Yoichi IIKUBO , Masaharu NAGAI , Aiko SHIGA
- 申请人： Hideto OHNUMA , Kenichiro MAKINO , Yoichi IIKUBO , Masaharu NAGAI , Aiko SHIGA
- 申请人地址： JP Atsugi-shi
- 专利权人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人地址： JP Atsugi-shi
- 优先权： JP2008-166447 20080625
- 主分类号： H01L21/762
- IPC分类号： H01L21/762
摘要：
To improve bonding strength and improve reliability of an SOI substrate in bonding a semiconductor substrate and a base substrate to each other even when an insulating film containing nitrogen is used as a bonding layer, an oxide film is provided on the semiconductor substrate side, a nitrogen-containing layer is provided on the base substrate side, and the oxide film formed on the semiconductor substrate and the nitrogen-containing layer formed over the base substrate are bonded to each other. Further, plasma treatment is performed on at least one of the oxide film and the nitrogen-containing layer before bonding the oxide film formed on the semiconductor substrate and the nitrogen-containing layer formed over the base substrate to each other. Plasma treatment can be performed in a state in which a bias voltage is applied.
公开/授权文献
- US07829432B2 Method for manufacturing SOI substrate 公开/授权日：2010-11-09
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