公开(公告)号：US08486772B2

公开(公告)日：2013-07-16

申请号：US13454114

申请日：2012-04-24

申请人： Kazuya Hanaoka ,  Hideki Tsuya ,  Masaharu Nagai

发明人： Kazuya Hanaoka ,  Hideki Tsuya ,  Masaharu Nagai

IPC分类号： H01L21/00 ,  H01L21/46 ,  H01L21/20 ,  H01L21/461

CPC分类号： H01L21/76254

摘要： The method of one embodiment of the present invention includes: a first step of irradiating a bond substrate with ions to form an embrittlement region in the bond substrate; a second step of bonding the bond substrate to a base substrate with an insulating layer therebetween; a third step of splitting the bond substrate at the embrittlement region to form a semiconductor layer over the base substrate with the insulating layer therebetween; and a fourth step of subjecting the bond substrate split at the embrittlement region to a first heat treatment in an argon atmosphere and then a second heat treatment in an atmosphere of a mixture of oxygen and nitrogen to form a reprocessed bond substrate. The reprocessed bond substrate is used again as a bond substrate in the first step.

摘要翻译： 本发明的一个实施方案的方法包括：第一步骤，用离子照射键合衬底，以在接合衬底中形成脆化区; 将所述接合衬底粘合到其上具有绝缘层的基底衬底的第二步骤; 在所述脆化区域分割所述键合衬底以在所述基底衬底上形成半导体层并在其间具有绝缘层的第三步骤; 以及第四步骤，将在脆化区域分裂的键合衬底在氩气氛中进行第一次热处理，然后在氧和氮的混合气氛中进行第二次热处理，以形成再加工的接合衬底。 在第一步中再次使用再加工的键合衬底作为键合衬底。

公开(公告)号：US08362693B2

公开(公告)日：2013-01-29

申请号：US13277478

申请日：2011-10-20

申请人： Shunpei Yamazaki ,  Masayuki Sakakura ,  Masaharu Nagai ,  Yutaka Matsuda ,  Kengo Akimoto ,  Gen Fujii ,  Tetsuji Yamaguchi

发明人： Shunpei Yamazaki ,  Masayuki Sakakura ,  Masaharu Nagai ,  Yutaka Matsuda ,  Kengo Akimoto ,  Gen Fujii ,  Tetsuji Yamaguchi

IPC分类号： H01L51/10

CPC分类号： H01L51/529 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/3246 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3276 ,  H01L29/66757 ,  H01L51/5206 ,  H01L51/5246 ,  H01L2251/5315 ,  H01L2251/5323

摘要： It is an object of the present invention to provide a reliable display device and a method for manufacturing the display device reducing the number of manufacturing steps, and with higher yield. A display device according to the invention includes a plurality of display elements each having a first electrode, a layer containing an organic compound, and a second electrode. The display device further includes a heat-resistant planarizing film over a substrate having an insulating surface, a first electrode over the heat-resistant, planarizing film, a wiring covering an end portion of the first electrode, a partition wall covering the end portion of first electrode and the wiring, a layer containing an organic compound, and a second electrode over the layer containing an organic compound.

摘要翻译： 本发明的目的是提供一种可靠的显示装置和用于制造显示装置的方法，其减少制造步骤的数量，并且以更高的产量。 根据本发明的显示装置包括多个显示元件，每个显示元件具有第一电极，含有有机化合物的层和第二电极。 显示装置还包括在具有绝缘表面的基板上的耐热平面化膜，在耐热平坦化膜上的第一电极，覆盖第一电极的端部的布线，覆盖第一电极的端部的分隔壁 第一电极和布线，含有有机化合物的层，以及包含有机化合物的层上的第二电极。

公开(公告)号：US08283862B2

公开(公告)日：2012-10-09

申请号：US12905568

申请日：2010-10-15

申请人： Shunpei Yamazaki ,  Junichiro Sakata ,  Takashi Hamada ,  Masaharu Nagai ,  Yutaka Matsuda

发明人： Shunpei Yamazaki ,  Junichiro Sakata ,  Takashi Hamada ,  Masaharu Nagai ,  Yutaka Matsuda

IPC分类号： H05B33/22

CPC分类号： H01L27/3258 ,  H01L21/31608 ,  H01L27/3246 ,  H01L27/3276 ,  H01L51/5206 ,  H01L51/5218 ,  H01L51/5246 ,  H01L51/5281 ,  H01L51/529 ,  H01L2251/5315 ,  H01L2251/5323

摘要： An object of the present invention is to realize a light emitting device having low power consumption and high stability, in addition to improve extraction efficiency of light generated in a light emitting element. At least an interlayer insulating film (including a planarizing film), an anode, and a bank covering an edge portion of the anode contain chemically and physically stable silicon oxide, or are made of a material containing silicon oxide as its main component in order to accomplish a light emitting device having high stability. Generation of heat in a light emitting panel can be suppressed in addition to increase in efficiency (luminance/current) of a light emitting panel according to the structure of the present invention. Consequently, synergistic effect on reliability of a light emitting device is obtained.

摘要翻译： 本发明的目的是提供一种具有低功耗和高稳定性的发光器件，同时提高了在发光元件中产生的光的提取效率。 至少层间绝缘膜（包括平坦化膜），阳极和覆盖阳极的边缘部分的堤包含化学和物理稳定的氧化硅，或由含有氧化硅作为其主要成分的材料制成，以便 实现了具有高稳定性的发光器件。 除了根据本发明的结构提高发光面板的效率（亮度/电流）之外，还可以抑制发光面板中的发热。 因此，获得了对发光器件的可靠性的协同效应。

公开(公告)号：US07960733B2

公开(公告)日：2011-06-14

申请号：US12251753

申请日：2008-10-15

申请人： Shunpei Yamazaki ,  Masaharu Nagai ,  Osamu Nakamura

发明人： Shunpei Yamazaki ,  Masaharu Nagai ,  Osamu Nakamura

IPC分类号： H01L29/04

CPC分类号： H01L27/3244 ,  G02F1/13454 ,  G02F1/136227 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/3246 ,  H01L27/3258 ,  H01L51/5246 ,  H01L51/529 ,  H01L2251/5323

摘要： It is an object of the present invention to provide a high reliable EL display device and a manufacturing method thereof by shielding intruding moisture or oxygen which is a factor of deteriorating the property of an EL element without enlarging the EL display device.In the invention, application is used as a method for forming a high thermostability planarizing film 16, typically, an interlayer insulating film (a film which serves as a base film of a light emitting element later) of a TFT in which a skeletal structure is configured by the combination of silicon (Si) and oxygen (O). After the formation, an edge portion or an opening portion is formed to have a tapered shape. Afterwards, distortion is given by adding an inert element with a comparatively large atomic radius to modify or highly densify a surface (including a side surface) for preventing the intrusion of moisture or oxygen.

摘要翻译： 本发明的目的是提供一种高可靠性的EL显示装置及其制造方法，该EL显示装置及其制造方法通过屏蔽侵入的水分或氧气，这是使EL元件的特性劣化而不扩大EL显示装置的因素。 在本发明中，作为用于形成高热稳定性平坦化膜16的方法，通常使用其中骨架结构是TFT的TFT层的绝缘膜（用作发光元件的基膜的膜） 由硅（Si）和氧（O）的组合构成。 在形成之后，形成具有锥形形状的边缘部分或开口部分。 然后，通过添加具有较大原子半径的惰性元素来改变或高度致密化表面（包括侧表面）以防止水分或氧气的侵入而给出变形。

公开(公告)号：US07947538B2

公开(公告)日：2011-05-24

申请号：US12534176

申请日：2009-08-03

申请人： Hideto Ohnuma ,  Masaharu Nagai ,  Mitsuaki Osame ,  Masayuki Sakakura ,  Shigeki Komori ,  Shunpei Yamazaki

发明人： Hideto Ohnuma ,  Masaharu Nagai ,  Mitsuaki Osame ,  Masayuki Sakakura ,  Shigeki Komori ,  Shunpei Yamazaki

IPC分类号： H01L21/00

CPC分类号： H01L27/124 ,  H01L27/1214 ,  H01L27/1251 ,  H01L27/1288 ,  H01L27/14623 ,  H01L27/3244 ,  H01L29/78645

摘要： It is an object of the present invention to form a plurality of elements in a limited area to reduce the area occupied by the elements for integration so that further higher resolution (increase in number of pixels), reduction of each display pixel pitch with miniaturization, and integration of a driver circuit that drives a pixel portion can be advanced in semiconductor devices such as liquid crystal display devices and light-emitting devices that has EL elements. A photomask or a reticle provided with an assist pattern that is composed of a diffraction grating pattern or a semi-transparent film and has a function of reducing a light intensity is applied to a photolithography process for forming a gate electrode to form a complicated gate electrode. In addition, a top-gate TFT that has the multi-gate structure described above and a top gate TFT that has a single-gate structure can be formed on the same substrate just by changing the mask without increasing the number of processes.

摘要翻译： 本发明的目的是在有限的区域中形成多个元件，以减少用于积分的元件所占据的面积，从而进一步提高分辨率（增加像素数），减小每个显示像素间距，同时小型化， 并且驱动像素部分的驱动电路的集成可以在具有EL元件的液晶显示装置和发光装置等半导体装置中进行。 将具有由衍射光栅图案或半透明膜构成的辅助图案的光掩模或掩模版施加到用于形成栅电极的光刻工艺以形成复杂的栅电极 。 此外，只要通过改变掩模而不增加处理次数，就可以在同一基板上形成具有上述多栅结构的顶栅TFT和具有单栅结构的顶栅TFT。

公开(公告)号：US07737449B2

公开(公告)日：2010-06-15

申请号：US11984552

申请日：2007-11-19

申请人： Shunpei Yamazaki ,  Masayuki Sakakura ,  Masaharu Nagai ,  Yutaka Matsuda ,  Keiko Saito ,  Hisao Ikeda

发明人： Shunpei Yamazaki ,  Masayuki Sakakura ,  Masaharu Nagai ,  Yutaka Matsuda ,  Keiko Saito ,  Hisao Ikeda

IPC分类号： H01L29/04

CPC分类号： H01L51/56 ,  H01L27/3244 ,  H01L27/3246 ,  H01L51/5203 ,  H01L51/5262 ,  H01L2251/5315 ,  H01L2251/5323

摘要： The present invention provides a highly stable light emitting device having high light-emitting efficiency (light-extraction efficiency) with high luminance and low power consumption, and a method of manufacturing thereof. A partition wall and a heat-resistant planarizing film are formed of a same material so as to be well-adhered to each other, thereby reducing material costs. Either an anode or a cathode is formed on the heat-resistant planarizing film. The partition wall and the heat-resistant planarizing film is adhered to each other without inserting a film having different refractive index therebetween, and therefore reflection of light is not caused in an interface.

摘要翻译： 本发明提供了具有高亮度和低功耗的高发光效率（光提取效率）的高度稳定的发光器件及其制造方法。 分隔壁和耐热平面化膜由相同的材料形成以便彼此良好地粘附，从而降低材料成本。 在耐热平面化膜上形成阳极或阴极。 分隔壁和耐热平面化膜彼此粘合而不插入其间具有不同折射率的膜，因此在界面上不会引起光的反射。

公开(公告)号：US20090291536A1

公开(公告)日：2009-11-26

申请号：US12534176

申请日：2009-08-03

申请人： Hideto Ohnuma ,  Masaharu Nagai ,  Mitsuaki Osame ,  Masayuki Sakakura ,  Shigeki Komori ,  Shunpei Yamazaki

发明人： Hideto Ohnuma ,  Masaharu Nagai ,  Mitsuaki Osame ,  Masayuki Sakakura ,  Shigeki Komori ,  Shunpei Yamazaki

IPC分类号： H01L21/336

CPC分类号： H01L27/124 ,  H01L27/1214 ,  H01L27/1251 ,  H01L27/1288 ,  H01L27/14623 ,  H01L27/3244 ,  H01L29/78645

摘要： It is an object of the present invention to form a plurality of elements in a limited area to reduce the area occupied by the elements for integration so that further higher resolution (increase in number of pixels), reduction of each display pixel pitch with miniaturization, and integration of a driver circuit that drives a pixel portion can be advanced in semiconductor devices such as liquid crystal display devices and light-emitting devices that has EL elements. A photomask or a reticle provided with an assist pattern that is composed of a diffraction grating pattern or a semi-transparent film and has a function of reducing a light intensity is applied to a photolithography process for forming a gate electrode to form a complicated gate electrode. In addition, a top-gate TFT that has the multi-gate structure described above and a top gate TFT that has a single-gate structure can be formed on the same substrate just by changing the mask without increasing the number of processes.

摘要翻译： 本发明的目的是在有限的区域中形成多个元件，以减少用于积分的元件所占据的面积，从而进一步提高分辨率（增加像素数），减小每个显示像素间距，同时小型化， 并且驱动像素部分的驱动电路的集成可以在具有EL元件的液晶显示装置和发光装置等半导体装置中进行。 将具有由衍射光栅图案或半透明膜构成的辅助图案的光掩模或掩模版施加到用于形成栅电极的光刻工艺以形成复杂的栅电极 。 此外，只要通过改变掩模而不增加处理次数，就可以在同一基板上形成具有上述多栅结构的顶栅TFT和具有单栅结构的顶栅TFT。

公开(公告)号：US07608490B2

公开(公告)日：2009-10-27

申请号：US11440175

申请日：2006-05-25

申请人： Shunpei Yamazaki ,  Tetsuya Kakehata ,  Hideto Ohnuma ,  Masaharu Nagai ,  Mitsuaki Osame ,  Masayuki Sakakura ,  Shigeki Komori

发明人： Shunpei Yamazaki ,  Tetsuya Kakehata ,  Hideto Ohnuma ,  Masaharu Nagai ,  Mitsuaki Osame ,  Masayuki Sakakura ,  Shigeki Komori

IPC分类号： H01L21/00

CPC分类号： H01L21/02683 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/02686 ,  H01L21/2026 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/127 ,  H01L27/1285 ,  H01L27/1288

摘要： To provide a semiconductor device having a circuit with high operating performance and high reliability, and improve the reliability of the semiconductor device, thereby improving the reliability of an electronic device having the same. The aforementioned object is achieved by combining a step of crystallizing a semiconductor layer by irradiation with continuous wave laser beams or pulsed laser beams with a repetition rate of 10 MHz or more, while scanning in one direction; a step of photolithography with the use of a photomask or a leticle including an auxiliary pattern which is formed of a diffraction grating pattern or a semi-transmissive film having a function of reducing the light intensity; and a step of performing oxidation, nitridation, or surface-modification to the surface of the semiconductor film, an insulating film, or a conductive film, with high-density plasma with a low electron temperature.

摘要翻译： 为了提供具有高操作性能和高可靠性的电路的半导体器件，并且提高了半导体器件的可靠性，从而提高了具有该半导体器件的电子器件的可靠性。 上述目的是通过在沿一个方向扫描的同时，通过照射连续波激光束或重复频率为10MHz或更高的脉冲激光束来结合半导体层结晶步骤来实现的; 使用光掩模或包含由衍射光栅图案形成的辅助图案或具有降低光强度功能的半透射膜的吸收体的光刻步骤; 以及对具有低电子温度的高密度等离子体对半导体膜，绝缘膜或导电膜的表面进行氧化，氮化或表面改性的步骤。

公开(公告)号：US07579220B2

公开(公告)日：2009-08-25

申请号：US11383694

申请日：2006-05-16

申请人： Hideto Ohnuma ,  Masaharu Nagai ,  Mitsuaki Osame ,  Masayuki Sakakura ,  Shigeki Komori ,  Shunpei Yamazaki

发明人： Hideto Ohnuma ,  Masaharu Nagai ,  Mitsuaki Osame ,  Masayuki Sakakura ,  Shigeki Komori ,  Shunpei Yamazaki

IPC分类号： H01L21/00

CPC分类号： H01L27/124 ,  H01L27/1214 ,  H01L27/1251 ,  H01L27/1288 ,  H01L27/14623 ,  H01L27/3244 ,  H01L29/78645

摘要： It is an object of the present invention to form a plurality of elements in a limited area to reduce the area occupied by the elements for integration so that further higher resolution (increase in number of pixels), reduction of each display pixel pitch with miniaturization, and integration of a driver circuit that drives a pixel portion can be advanced in semiconductor devices such as liquid crystal display devices and light-emitting devices that has EL elements. A photomask or a reticle provided with an assist pattern that is composed of a diffraction grating pattern or a semi-transparent film and has a function of reducing a light intensity is applied to a photolithography process for forming a gate electrode to form a complicated gate electrode. In addition, a top-gate TFT that has the multi-gate structure described above and a top gate TFT that has a single-gate structure can be formed on the same substrate just by changing the mask without increasing the number of processes.

摘要翻译： 本发明的目的是在有限的区域中形成多个元件，以减少用于积分的元件所占据的面积，从而进一步提高分辨率（增加像素数），减小每个显示像素间距，同时小型化， 并且驱动像素部分的驱动电路的集成可以在具有EL元件的液晶显示装置和发光装置等半导体装置中进行。 将具有由衍射光栅图案或半透明膜构成的辅助图案的光掩模或掩模版施加到用于形成栅电极的光刻工艺以形成复杂的栅电极 。 此外，只要通过改变掩模而不增加处理次数，就可以在同一基板上形成具有上述多栅结构的顶栅TFT和具有单栅结构的顶栅TFT。

公开(公告)号：US20090001467A1

公开(公告)日：2009-01-01

申请号：US12163227

申请日：2008-06-27

申请人： Masaharu NAGAI ,  Takafumi MIZOGUCHI

发明人： Masaharu NAGAI ,  Takafumi MIZOGUCHI

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/78648 ,  H01L29/6675 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621

摘要： To provide a semiconductor device in which a channel formation region can be thinned without adversely affecting a source region and a drain region through a simple process and a method for manufacturing the semiconductor device. In the method for manufacturing a semiconductor device, a semiconductor film, having a thickness smaller than a height of a projection of a substrate, is formed over a surface of the substrate having the projections; the semiconductor film is etched to have an island shape with a resist used as a mask; the resist is etched to expose a portion of the semiconductor film which covers a top surface of the projection; and the exposed portion of the semiconductor film is etched to be thin, while the adjacent portions of the semiconductor film on both sides of the projection remain covered with the resist.

摘要翻译： 为了提供一种半导体器件，其中可以通过简单的工艺减少沟道形成区域而不会不利地影响源极区域和漏极区域，以及制造半导体器件的方法。 在半导体装置的制造方法中，在具有突起的基板的表面上形成厚度小于基板突起的高度的半导体膜， 蚀刻半导体膜以具有岛状，其中抗蚀剂用作掩模; 蚀刻抗蚀剂以暴露覆盖突起的顶表面的半导体膜的一部分; 并且半导体膜的暴露部分被蚀刻为薄，同时半导体膜在投影两侧的相邻部分保持被抗蚀剂覆盖。