发明申请
- 专利标题： PREVENTION AND REDUCTION OF SOLVENT AND SOLUTION PENETRATION INTO POROUS DIELECTRICS USING A THIN BARRIER LAYER
- 专利标题（中）： 使用薄壁隔离层防止和减少溶剂和溶液渗透到多孔电介质
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申请号： US12147986申请日： 2008-06-27
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公开(公告)号： US20090325381A1公开(公告)日： 2009-12-31
- 发明人: KELVIN CHAN , Khaled A. Elsheref , Alexandros T. Demos , Meiyee Shek , Lipan Li , Li-Qun Xia , Kang sub Yim
- 申请人： KELVIN CHAN , Khaled A. Elsheref , Alexandros T. Demos , Meiyee Shek , Lipan Li , Li-Qun Xia , Kang sub Yim
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 主分类号： H01L21/44
- IPC分类号： H01L21/44
摘要：
A method and apparatus for treating a substrate is provided. A porous dielectric layer is formed on the substrate. In some embodiments, the dielectric may be capped by a dense dielectric layer. The dielectric layers are patterned, and a dense dielectric layer deposited conformally over the substrate. The dense conformal dielectric layer seals the pores of the porous dielectric layer against contact with species that may infiltrate the pores. The portion of the dense conformal pore-sealing dielectric layer covering the field region and bottom portions of the pattern openings is removed by directional selective etch.
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