发明申请
- 专利标题： CONTROLLING FOR VARIABLE IMPEDANCE AND VOLTAGE IN A MEMORY SYSTEM
- 专利标题（中）： 控制存储系统中的可变阻抗和电压
-
申请号： US12165804申请日： 2008-07-01
-
公开(公告)号： US20100001758A1公开(公告)日： 2010-01-07
- 发明人: Daniel M. Dreps , David J. Chen , William F. Lawson , David W. Mann
- 申请人： Daniel M. Dreps , David J. Chen , William F. Lawson , David W. Mann
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 主分类号： H03K17/16
- IPC分类号： H03K17/16 ; G11C8/00 ; H03K19/0175
摘要：
A memory interface device, system, method, and design structure for controlling for variable impedance and voltage in a memory system are provided. The memory interface device includes a calibration cell configurable to adjust an output impedance relative to an external reference resistor, and driver circuitry including multiple positive drive circuits and multiple negative drive circuits coupled to a driver output in a memory system. The memory interface device further includes impedance control logic to adjust the output impedance of the calibration cell and selectively enable the positive and negative drive circuits as a function of a drive voltage and a target impedance.
公开/授权文献
信息查询
