发明申请
- 专利标题： METHODS OF FORMING A LAYER FOR BARRIER APPLICATIONS IN AN INTERCONNECT STRUCTURE
- 专利标题（中）： 在互连结构中形成障碍物应用层的方法
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申请号： US12562607申请日： 2009-09-18
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公开(公告)号： US20100006425A1公开(公告)日： 2010-01-14
- 发明人: Xinyu Fu , Keyvan Kashefizadeh , Ashish Subhash Bodke , Winsor Lam , Yiochiro Tanaka , Wonwoo Kim
- 申请人： Xinyu Fu , Keyvan Kashefizadeh , Ashish Subhash Bodke , Winsor Lam , Yiochiro Tanaka , Wonwoo Kim
- 主分类号： C23C14/34
- IPC分类号： C23C14/34
摘要：
Methods of forming a barrier layer are provided. In one embodiment, the method includes providing a substrate into a physical vapor deposition (PVD) chamber, supplying at least two reactive gases and an inert gas into the PVD chamber, sputtering a source material from a target disposed in the processing chamber in the presence of a plasma formed from the gas mixture, and forming a metal containing dielectric layer on the substrate from the source material. In another embodiment, the method includes providing a substrate into a PVD chamber, supplying a reactive gas the PVD chamber, sputtering a source material from a target disposed in the PVD chamber in the presence of a plasma formed from the reactive gas, forming a metal containing dielectric layer on the substrate from the source material, and post treating the metal containing layer in presence of species generated from a remote plasma chamber.