发明申请
US20100006912A1 Planar Metal-Insulator-Metal Circuit Element and Method for Planar Integration of Same
审中-公开
平面金属绝缘体 - 金属电路元件及其平面集成方法
- 专利标题: Planar Metal-Insulator-Metal Circuit Element and Method for Planar Integration of Same
- 专利标题(中): 平面金属绝缘体 - 金属电路元件及其平面集成方法
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申请号: US12368900申请日: 2009-02-10
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公开(公告)号: US20100006912A1公开(公告)日: 2010-01-14
- 发明人: Bradley J. Larsen , Todd A. Randazzo , Cheisan Yue
- 申请人: Bradley J. Larsen , Todd A. Randazzo , Cheisan Yue
- 申请人地址: US NJ Morristown
- 专利权人: HONEYWELL INTERNATIONAL INC.
- 当前专利权人: HONEYWELL INTERNATIONAL INC.
- 当前专利权人地址: US NJ Morristown
- 主分类号: H01L29/68
- IPC分类号: H01L29/68 ; H01L23/52 ; H01L21/02
摘要:
A complementary metal-oxide-semiconductor (CMOS) static random-access-memory (SRAM) element comprising a planar metal-insulator-metal (MIM) capacitor is disclosed, and the planar MIM capacitor is electrically connected to the transistors in the CMOS memory element to reduce the effects of charged particle radiation on the CMOS memory element. Methods for immunizing a CMOS SRAM element to the effects of charged particle radiation are also disclosed, along with methods for manufacturing CMOS SRAM including planar MIM capacitors as integrated circuits.